IRC TDW RESISTORS Search Results

irc tDW resistors

Contextual Info: HT62104 Infrared Remote Encoder Feature General Description • Operating voltage: 2.0V ~ 5.0V The HT62104 devices are high performance infrared remote control encoders which are manufactured in silicon gate CMOS technology. The HT62104 devices support eight data key inputs and an LED output to

Contextual Info: HT62104 Infrared Remote Encoder Feature General Description • Operating voltage: 2.0V ~ 5.0V The HT62104 devices are high performance infrared remote control encoders which are manufactured in silicon gate CMOS technology. The HT62104 devices support eight data key inputs and an LED output to

Contextual Info: FUpSU January 1994 Edition 1.0 DATA SHEET MB82008-17 CMOS 1M-BIT HIGH SPEED SRAM 131,072-WORD x 8-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82008 is 131,072-word x 8-bit high speed static random access memory fabricated with CMOS technology.

Contextual Info: November 1993 Edition 2.0 FUJITSU DATA SHEET : MB82009-20/-25 CMOS 1M-BIT HIGH SPEED SRAM 131,072-WORD X 9-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82009 is 131,072-word x 9-bit high speed static random access m em ory fabricated w ith CMOS technology.

Contextual Info: September 1990 Edition 1.0 FUJITSU DATA SHEET MBQ299-25/-35 CMOS 288K-BIT HIGH-SPEED BiCMOS SRAM 32K Words x 9 Bits BiCMOS High-Speed Static Random Access Memory The Fujitsu MB8299 is a high-speed static random access memory organized as 32,768 words x 9 bits and fabricated with CMOS technology. To obtain a smaller chip

Contextual Info: CMOS SRAM KM62256CL/CL-L 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Time : 55, 70, 8 5 , 100ns Max. • Low P o w e r Dissipation S tandby (CMOS) : 10yuW(Typ.) L-Version 5/iW(Typ.) LL-Version The K M 62 256C L /C L-L is a 2 6 2 ,1 4 4 -b it high-speed

28-TSOP1

Contextual Info: KM62256CL/CL-L CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 55,70, 8 5 ,100ns Max. • Low Power Dissipation Standby (CMOS) : 10pW(Typ.) L-Version 5/jW(Typ.) LL-Version Operating : 35mW/1 MHz(Max.) • Single 5 V ± 10% power supply

IDT7M135

Abstract: IDT7M134S IDT7M145
Contextual Info: Integrated Device Technology, Inc. 8K x 8 16K x 8 CMOS CMOS DUAL-PORT STATIC RAM MODULE MASTER FEATURES: • • • • • • • • • ■ • High-density 64K/128K CMOS Dual-Port RAM modules 16K x 8 (IDT7M135) or 8K x 8 (IDT7M134)option Fully asynchronous read/write operation from either port

PD431000

Abstract: uPD431000
Contextual Info: N E C ELECTRONICS INC 36E bHS7SSS ]> 003213^ NEC 2 I NECE pPD431000 131,072 X 8-Bit Static CMOS RAM NEC Electronics Inc. T ~ W r r 3 ;3 .- lH r Description Pin Configuration the /*PD431Q00 Is a 131,072-word by 8-bit static RAM fabricated with advanced sillcon-gate technology.

Contextual Info: FUJITSU CMOS 65536-BIT BI-CMOS MB82B75-1B STATIC RANDOM ACCESS MEMORY MB82B75-20 TS270-A893 March 1989 6 4 K - B I T 1 6 ,384 x 4 B i - C M O S H I G H SPE E D S T A T I C RANDOM ACCESS M E MO R Y WITH AUTOMATIC POWER DOWN The Fujitsu MB82B75 is a 16,384-words by 4-bits static

Contextual Info: HI GH S P E E D 1K X 8 D U A L - P O R T STATI C S R AM IDT7130SA/L A IDT7140SA/L A FEATURES 16-or-more-bits using SLAVE IDT7140 On-chip port arbitration logic IDT7130 Only BUSY output flag on IDT7130; BUSY input on IDT7140 ÏN T tlag tor port-to-port communication

Contextual Info: H A R HS-3282 F R IS REFERENCE AN400 CMOS ARINC Bus Interface Circuit J an u a ry 1 9 9 2 F ea tures P in o u ts 40 L E A D D IP • A R IN C S p e c ific a tio n 4 2 9 C o m p a tib le T O P V IE W • D a ta R a te s o f 1 0 0 K ilo b its o r 1 2 . 5 K ilo b its

stereophonic

Abstract: m9841 resistor m9841 MSM9841 MSM9841GS-2K
Contextual Info: E2D1029-18-31 O K I Semiconductor MSM9841_ Recording and Playback LSI with Built-in FIFO GENERAL DESCRIPTION The MSM9841 is a m o n o /ste reo record and playback LSI w ith a built-in IK bit FIFO for easy interface w ith external system s or non-sem iconductor m em ory. It utilizes m ultiple record and

Contextual Info: DUAL PORT STATIC RAM 2K x 8 -B IT CMOS FUJITSU M B8421/22-90 MB8421/22-90L MB8421/22-12 MB8421/22-12L May 1989 Edition 2.0 DUAL PORT STATIC RAM 2K X 8-BIT CMOS The Fujitsu MB8421/MB8422 are 2K by 8 dual-port high-perform ance Static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use

DHC8-P85

Abstract: C82C55A I82C55A M82C55A
Contextual Info: ;•. > 1 ÏS S ÏÎS ! UAL A DUAL PARALLEL PORT INTERFACE MODULE WWhite DHC8-DPDS SERIES Technology, Inc. Advance Information 001609 FEATURES • 200° C Operating Temperature • • • • • Two Separate Serial Ports Two Separate Parallel Ports Single 5 Volt Power Supply

C2939

Abstract: CHN 617
Contextual Info: HIGH-SPEED IDT7026S/L 1 6 K x 16 D U A L - P O R T STATIC R A M FEATURES: • • • • True D ual-Ported m em ory cells which allow sim ulta­ neous access ot the sam e m em ory location High-speed access — M ilitary: 20/25/35/55ns max. — Industrial: 55ns (max.)

Contextual Info: HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT F eatures * INT flag for port-to-port com m unication * Battery backup operation— 2V data retention * TTL-com patible, sign al 5V ±10% power supply * Available in 52-pin P L C C * Industrial temperature range (-4 0 °C to +85°C) is available for

Contextual Info: HIGH-SPEED 8K x 9 DUAL-PORT £ V ¡ y IDT7015S/L STATIC RAM Integrated Device Technology, Inc. FEATURES: • • • • • True Dual-Ported memory cells which allow simulta­ neous reads of the same memory location High-speed access — Military: 25/35ns max.

Contextual Info: ffl h a r r is H M - 6 5 5 1 / 8 8 3 256 x 4 CMOS RAM June 1989 P in o u t F eatures • This Circuit is Processed in Accordance to M il-S td -8 8 3 and is Fully C onform ant U nder the Provisions of Paragraph 1.2.1. • Low Power S ta n d b y .SOfiWMax.

MAX134 Multimeter

Abstract: MAX133CQH J368 LCD-IV MAX133 MAX133EPL MAX133EQH MAX134 MAX134CPL MAX134CQH
Contextual Info: J V \J Y X \J V \ 3 3A D ig it D M M C irc u it _F e a tu re s The M AX133 and M AX134 are in te g ra tin g A /D c o n ­ verters fo r 3% d ig it m u ltim e te rs and data a c q u is itio n system s such as data lo g g e rs and w eigh scales. The

2740 D

Abstract: C4645
Contextual Info: gjjirN HIGH-SPEED 4Kx 16 DUAL-PORT STATIC RAM Integrated Device Technology, inc. FEATURES: IDT7024S/L • T ru e D u a l-P o rte d m e m o ry c e lls w h ic h a llo w s im u lta ­ n e o u s re a d s o f th e s a m e m e m o ry lo c a tio n • m o re th a n o n e d e v ice

KM62256C

Abstract: KM62256CL km62256cls KM62256CL-7
Contextual Info: CMOS SRAM KM62256CL / CL-L 32Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • F a st A cce ss T im e : 55, 7 0 n s M ax. ■ Low P o w e r D issip a tio n S ta n d b y (C M O S ): 5 5 0 |iW (m a x.) L V e rsio n 1 1 0 |iW (m a x.) LL V e rsio n

Contextual Info: HIGH-SPEED 16Kx 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70261S/L Integrated Device Technology, Inc FEATURES: • • T ru e D u a l-P o rte d m e m o ry c e lls w h ic h a llo w s im u lta ­ n e o u s re a d s o f th e s a m e m e m o ry lo c a tio n H ig h -s p e e d a cc e s s

Contextual Info: PRELIMINARY IDT7027S/L HIGH-SPEED 32Kx 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • • • • • T ru e D u a l-P o rte d m e m o ry cells w h ic h a llo w s im u lta ­ neous a cce ss of th e s a m e m e m o ry lo cation H ig h -sp e e d access