IRC GS-3 RESISTOR Search Results

MIL-R-26

Abstract: MIL-R-22684 IRC gs-3 C 828 gs-3 GS-3 resistor IRC GS-3 TO
Contextual Info: Thick Film Semi-Precision Metal Glaze Power Resistors IRC Wire and Film Technologies Division GS-3 Series • Power rating of 3W @25°C; 2W @ 70°C • Resistance range from 1Ω to 3MΩ • Standard tolerances of ±1%, ±2%, ±5% • Superior surge performance

Contextual Info: THICK FILM METAL GLAZE RESISTOR GF • • • • ISO-9001 ^R egistered/ SERIES Flame resistant construction Rugged molded jacket High temperature soldered termination Metal Glaze™ thick film element_ Tin-lead electroplated copper leads SPECIFICATIONS:

fixed film resistor

Abstract: GF-55 irc 2w resistor
Contextual Info: Thick Film Metal Glaze Resistor ������������������ ��������������������� ���������������� GF Series ����������������

IRC GS-3 TO

Abstract: GS-3 resistor IRC gs-3 irc gs-3 resistor 1R00 51R0 MIL-R-22684 MIL-R-26 R250 irc lf
Contextual Info: Thick Film Semi-Precision Metal Glaze Power Resistors GS-3 Series • • • • • Superior surge performance Resistance range from 1Ω - 3MΩ Standard tolerances of ±1%, ±2%, ±5% Power rating of 3W @25°C; 2W @70°C Effective as carbon composite replacement

IRC GF

Abstract: GF-55 marking code gf GF20
Contextual Info: THICK FILM METAL GLAZE RESISTOR ISO-9001 Registered GF SERIES Spiralled or laser helixed to resistance value, tolerance High temperature soldered termination-lead assembly Tough molded jacket • • • • Metal Glaze thick film element fired at 1000°C to

GF20D

Contextual Info: s Off?C »•Bin« THICK FILM METAL GLAZE RESISTOR Spiralled or laser helixed to resistance value, tolerance High temperature soldered termination-lead assembly GF SERIES Tough molded jacket Flame resistant construction -Tin-lead electroplated copper leads

fet third quadrant operation

Abstract: jfet transistor for VCR fet vcr compatible siliconix FET AUDIO AMPLIFIER n-channel jfet amplitude control 647 "photomultiplier" N-Channel JFET FETs sherwin transistor jfet P channel Junction FET
Contextual Info: s Siliconix APPLICATION NOTE FETs As Voltage-Controlled Resistors IN T R O D U C T IO N The Nature of VCRs A v o lta g e -c o n tro lle d re sisto r V C R m ay be d e fin e d as a th re e -te rm in a l v ariable re sisto r w h e re th e re sista n c e value

15-4100-4

Contextual Info: nine ai, Ot= THE RESISTOR PEOPLE u .3 cco =>s / TANFILM SMALL OUTLINE SURFACE MOUNT RESISTOR NETWORK UJ GULL WING z • • • • • • - Rugged, molded construction SERIES DESC 87012 and 87013 available Thin film precision Designed for reflow soldering techniques

87013

Contextual Info: TaNFilm SMALL OUTLINE SURFACE MOUNT RESISTOR NETWORK ISO-9001 Registered Rugged, molded construction GULL WING SERIES Ultra precision sputtered tantalum nitride resistance element on high purity alumina • • • • • • DESC 87012 and 87013 available

Contextual Info: Advanced IRFS730A Power MOSFET FEATURES B V DSS Rugged Gate Oxide Technology • Lower Input Capacitance ^ D S o n = ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current :10|JA(Max.) @ V DS = 400V ■ Lower RDS(ON) : 0.765 £1 (Typ.)

R0009 14 lead

Abstract: r0009 14 pin
Contextual Info: SURFACE MOUNT _QIRC THE RESISTOR PEOPLE TANFILM SUBMINIATURE SURFACE MOUNT PRECISION DIVIDER SMT-TEE Encapsulation, optional color code indicator SERIES • Subminiature 0.075" x 0.075" • Dual resistor, center pad common • High precision - Absolute tolerance

IRC 0805

Abstract: N2 SOT23-6 AVX 0805 dp502 b 1969 INDUCTOR CHIP FERRITE BEAD 0805 C3330 avx-1210 CIRKIT diagram Converter 24V to 12V Sanyo capacitors
Contextual Info: ZXRD1000 SERIES
PWM DC-DC CONTROLLERS HIGH EFFICIENCY SIMPLESYNC DESCRIPTION ZXRD1000 series can be used with an all N channel topology or a combination N & P channel topology. Additional functionality includes shutdown control, a user adjustable low battery flag and simple

rohm CRB25 series

Abstract: CRB25 samsung ltcc KOA RK73 samsung SMD resistors SMD resistors 0805 koa SMD resistors 1206 samsung crcw resistors dale KOA RK73B sei smd 1206 resistors
Contextual Info: PMS 378 neg. PMS 540 neg. RESISTORS KOA SPEER ELECTRONICS, INC. 5% STANDARD E-24 E-12 Decade Values 10 33 12 39 15 47 18 56 22 68 27 82 10 22 47 11 24 51 12 27 56 13 30 62 15 33 68 16 36 75 . . . your partner in advancing technology • 18 39 82 20 43 91

Contextual Info: ilm Semi-Precision Glaze Thick Film Semi-Precision Metal Glaze™ Power Resistors Resistors Thick Film Semi-Precision •Metal Superior surge performance · ResistanceGlaze™ range from 1Ω - 3MΩ erformance Standard tolerances of ±1%, ±2%, ±5% Resistors

simple circuit diagram of electronic choke low cost

Abstract: dp502 20SV68M IT 236 schaffner n1 sot23 Sanyo capacitors simple circuit diagram of electronic choke 680R BAT54 QSOP16
Contextual Info: ZXRD1000 SERIES
PWM DC-DC CONTROLLERS HIGH EFFICIENCY SIMPLESYNC DESCRIPTION ZXRD1000 series can be used with an all N channel topology or a combination N & P channel topology. Additional functionality includes shutdown control, a user adjustable low battery flag and simple

IRC GS-3 TO

Contextual Info: ILM3EMI 0RECISION 'LAZE˜ Thick Film Semi-Precision Metal Glaze Power Resistors 2ESISTORS 4HICK&ILM3EMI 0RECISION •-ETAL'LAZE˜ Superior surge performance · FORMANCE Resistance range from 1Ω - 3MΩ ·0OWER2ESISTORS Standard tolerances of ±1%, ±2%, ±5%

Contextual Info: IRFP254A A d van ced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V

Contextual Info: IRFP254 A d van ced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V

MSM6949

Contextual Info: OKI semiconductor MSM6949 ANALOG FRONT END LSI GENERAL DESCRIPTION The MSM6949 is an analog fr o n t end LSI w hich is fabricated by O K I's low power consum ption CMOS silicon gate technology. The MSM6949 is used to im plem ent an analog fro n t end fu n c tio n required in the modem set based on C C ITT V . 26, V . 27 and V . 29 re­

Power MOSFET 50V 10A

Abstract: 108D IRFP254A
Contextual Info: IRFP254A Advanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V

108D

Abstract: IRFP254
Contextual Info: IRFP254 A dvanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V

MOSFET IRF460

Abstract: IRF460 IRF462 MOSFET IRF460 flat package irf460 switching MOSFET 1rf460 1RF460 la1620 IRF46 AJZH
Contextual Info: Preview Products File Number IRF460, IRF462 2277 Avalanche-Energy-Rated N-Channel Power MOSFETs 21 A and 19 A, 500 V rDS on = 0.27 O and 0.35 O N-CHANNEL ENHANCEMENT MODE □ Features: • Single pulse avalanche energy rated m SOA is pow er-dissipation lim ite d

1d105

Abstract: unitrode Applications Note 1D100 100S ID100 ID103 ID104 ID105 ID106 unitrode op 02
Contextual Info: ID100-ID106 SCRs .5 Amp, Planar FEA TU RES • Voltage R a tin g s: to 400V • M axim um Gate T rigg er C u rre n t: 200/iA • H e rm e tically S e aled TO-18 M etal Can • P lan ar P assiv ate d C o n stru ction D ESCR IPTIO N T h is Data S h e e t d e sc rib e s U n itro d e's lin e of h e rm e tic a lly se ale d in d u stria l S C R s

1RF620

Contextual Info: • 4302571 0054013 HARRIS lib ■ HAS IR F 620/6 21/6 2 2/6 2 3 IRF62 OR/621R /622R /623R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B • 4.0A and 5.0A, 150V - 200V T O P VIE W • fDS on = O.Bii and 1.20 • Single Pulse Avalanche Energy Rated*