IR TRANSISTOR Search Results

Contextual Info: FREDERICK COMPONENTS V C POW ER M O SF E T s VD S I D 25TC 1 0 0 °C Rd A (V ) s W ) C IS S td m *D (o h m s) (P F ) (A ) (W ) P ackage IR F 1 2 0 IR F 1 2 2 IR F 1 2 3 IR F 1 3 0 IR F 1 3 1 IR F 1 3 2 IR F 1 3 3 IR F 1 4 0 IR F 1 4 1 IR F 1 4 2 IR F 1 4 3

NI00

Contextual Info: • 4flS5452 001bl4fl 2b^ ■ INR Insulated Gate Bipolar Transistor other Products From IR r INTERNATIONAL RECTIFIER bSE D Fast-Speed IGBT Modules Part Num ber B V C ES Collector to Em itter Breakdown Voltage V IR G T I0 6 5 F 0 6 IR G T I1 2 0 F 0 6 IR G T I1 6 5 F 0 6

IRF830

Abstract: GC237 IRF830FI IRF 830 IRF831 IRF831FI
Contextual Info: 7^237 00HS7Db SÜD • SGTH SCS-THOMSON G IRF830FI IRF831/FI ILlûï^MOûS ì N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V dss RDS on Id IR F 8 3 0 IR F 8 3 0 F I 500 V 500 V < 1.5 £2 < 1.5 n 4 .5 A 3 A IR F831 IR F 8 3 1 F I 450 V 450 V < 1.5 £2

IRF740

Abstract: IRF740FI
Contextual Info: ¿57 S G S -T H O M S O N ¡m e ra « IR F 7 4 0 IR F 7 4 0 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E IR F 740 IR F 740 F I V R DS on Id < 0.5 5 Q. < 0.5 5 Q. 10 A 5.5 A dss 400 V 400 V . TYPICAL RDS(on) = 0.42 Q . AVALANCHE RUGGED TECHNOLOGY

IRF22

Abstract: R/Detector/"detect18 ic"/"CD"/F223
Contextual Info: IR F220, IR F 22 1 IR F222, IRF22 3 2 HARRIS N -Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 Features Package TO -20 4 A A BOTTOM VIEW • 4.0A and 5.0A, 150V - 200V • rDS(on = 0 .8 0 and 1 .2 fi • SOA is Power-Dissipation Limited

Contextual Info: International IO R Rectifier Prelim inary Data Sheet No. PD-6.107-G IR 2 1 3 3 / IR 2 1 3 5 IR 2 2 3 3 / IR 2 2 3 5 3-PHASE BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V or+1200V Tolerant to negative transient voltage

Circuit Description

Abstract: circuit
Contextual Info: Circuit Description www.vishay.com Vishay Semiconductors Circuit Description of the IR Receiver Modules All Vishay IR receivers have the same circuit architecture. The functional block diagram of the Vishay TSOP IR receiver modules can be seen in figure 1. The infrared signal

U2535B

Abstract: U2535B-FP 28SEP00 NF847
Contextual Info: U2535B Preamplifier for IR Remote Control Description The IC U2535B is a complete IR receiver for data communication. The PIN photodiode converts the transmitted IR telegram into electronic input signals. This is separated by a special input circuit. The characteristics filter,

Hdsl-3600

Abstract: smd transistor 3310 33171 HSDL-3310 3310 DIODE 3310 DIODE DATASHEET 3310
Contextual Info: Agilent HSDL-3310 IrDA Data Compliant 1.152 Mb/s Infrared Transceiver Data Sheet Functional Description The HSDL-3310 is a small form factor infrared IR transceiver module that provides interface between logic and IR signals for through-air, serial, half-duplex IR

IRF150R

Abstract: IRF151R IRF152R IRF153R
Contextual Info: Rugged Power MOSFETs. File Num ber 2002 IR F150R , IR F15 1 R , IR F 152R , IR F153R Avalanche Energy Rated N-Channel Power MOSFETs 3 3 A an d 4 0 A , 6 0 V -1 0 0 V ros on = 0 .0 5 5 0 an d 0 .0 8 fi N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

Contextual Info: H A R R IS sem iconductor IR F 9230, IR F 9231, IR F9232, IR F 9233 -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs J a n u a ry 1998 Features Description • -5.5A a n d -6 .5 A ,-1 5 0 V a n d -2 0 0 V • High Input Impedance

Contextual Info: HARRIS s e m ic o n d u c to r IR F R 1 2 0 , IR F R 1 2 1 , IR F U 1 2 0 , IR F U 1 2 1 8.4A, 80V AND 100V, 0.27 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8.4A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

U2535B-FP

Abstract: telefunken s 150 U2535B Telefunken ir receiver U2535
Contextual Info: U2535B-FP TELEFUNKEN Semiconductors Preamplifier for IR Remote Control Description The IC U2535B-FP is a complete IR receiver for data communication. The PIN-photodiode converts the transmitted IR-telegram into the electronic input signals. This is separated by a special input circuit. The

"RCMM" protocol

Abstract: xtal 12MHz ir receiver transistor H11A 3.3v diagram receiver and transmitter for microcontroller RC5 Infrared transmitter philips usb gamepad controller ir receiver 36khz P80C652 Force Sensitive Resistor
Contextual Info: Philips Semiconductors 1 Oct 98 AN10011-01 previous filename: USB-IR DONGLE.pdf Implementing a USB-to-Infrared (Philips RCMM) Dongle - USB IR HID Device (OVU1000, Reference Design Ver 1.1) - USB Compound Hub with IR HID Device Author: Wim, Lemay Edited by: Wei Leong, Chui

IRFP340

Abstract: IRFP-341 IRFP341
Contextual Info: h a r r is s e m ic o n d u c to r IR F P 3 4 0 , IR F P 3 4 1 , IR F P 3 4 2 , IR F P 3 4 3 11A and 8.7A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 11A and 8.7A, 350V and 400V • Linear Transfer Characteristics

RFP450

Abstract: IRFP RE 40 IRFP 450 FP450 IRFP450FI
Contextual Info: w SGS-THOMSON N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE W R FP450 IR F P 4 5 0 F I I IR FP 451 IR FP 451 FI . . . IRFP450/FI IRFP451/FI ;LiO T «s V dss R DS on Id 500 V 500 V 0 .4 a 0 .4 i l 14 A 9 A 450 V 450 V 0 .4 £2 0.4 £2 14 A 9 A

Contextual Info: Government and Space PICs Other Products from IR IR 2125Z Current Limiting MOS Gate Drivers FEATURES • Current detection and limiting loop to limit driven power transistor current — Trip point at 230mV with 30 mV hysteresis — Leading edge blanking time of 500 ns

IRF9511

Abstract: IRF9513 IRF9510 IRF9512 100-C
Contextual Info: Rugged Power MOSFETs File Number 2214 IR F9510, IR F 9 5 1 1 IR F9512, IR F9513 Avalanche-Energy-Rated P-Channel Power MOSFETs -2.5A, a n d -3.0A, -60V a n d -100V rDsion = 1.20 a n d 1.60 t e r m in a l d ia g r a m Feature*: o • S in g le pulse a va lan ch e e n e rg y rated

1RF520

Abstract: irf521 irf520 IRF523
Contextual Info: SUPERTEX INC 01 D e | fl773STS GOOlSflH 0 IR F520 IRF521 IR F522 IR F523 R520 R521 Prelim inary N-Channel Enhancement-Mode Vertical DMOS Power FETs T “ 3 f-t* Ordering Information Order Number / Package ^DSS ^ ^DS ON *D(ON) bvms (max) (min) TO-220 TO-92

INFraRED REMOTE CONTROL bill of material

Abstract: ir amplifier ir learning Crimzon InfraRed Industries MCU FLASH ZCRMZNICE02ZACG ir photodiode amplifier rs232 block diagram of IR remote volume controller REMOTE CONTROL bill of material
Contextual Info: digital infrared Solutions CRIMZON ZLF645 Flash MCU uir solution with zbase ® database PB019710-0308 CRIMZON ZLF645 advantage • 32/64 kb flash • 512 b/1 kb ram • crimzon z8 lxmc core • ir transmission • ir learning • tuned ir amplifier • up to 40 gpios

TRANSISTOR SMD MARKING CODE 3401

Abstract: Q65110A6342 TRANSISTOR SMD MARKING CODE 702 fototransistor BPW 39 SFH415U sidelooker smd DIODE transistor smd 3401 SFH 4740 LPT80 BPY62
Contextual Info: Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden 107 Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden. 111

U2740B-FP

Abstract: NPN planar RF transistor 16 bit ic rf encoder programmable read write transponder transistor C892 e5550F-S8 M44C0W RF ENCODER RF 125khz receiver ir preamplifier
Contextual Info: Tem ic S e m i c o n d u c t o r s Selector Guide Remote Control Part Number Function Key Features Package IR Transm itter / Receiver BPV23NF PIN diode IR photo detector, 875 to 950 nm, sensitivity typical 65 ^A TSHA520. IR emitter family High efficiency, ± 12°, 875 nm

transistor 6cw

Abstract: 6cw transistor 6CW 60 6CW 62 rover IRH7450 IRH8450 TO404AA 6CW 75 100 amp silicon controlled rectifier
Contextual Info: Data Sheet No. PD-9.815A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS f IR H 7450 IR H 8450 N-CHANNEL MEGA RAD HARD 500 Volt, 0.45ft, MEGA RAD HARD HEXFET international Rectifier's MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown

Contextual Info: DEFINITIONS OF LETTER SYMBOLS AND ABBREVIATIONS Current: ICC ICBO ICCH ICCL IE IF Iin IINH IINL IL IOH IOL IOS Iout IOZL IOZH IR IR′ ISC Total power supply current drawn from the positive supply by a MECL unit under test. Leakage current from input transistor on MECL