IR PHOTOTRANSISTOR Search Results

photocell sensor

Contextual Info: DATASHEET Photon Detection VTT9812FH and VTT9814FH IR-Bloc Ambient Light Sensor IR-Blocking Silicon Phototransistor TM The IR-BlocTM family is the only ambient light sensor family on the market that comes in a low cost package with the IR-blocking feature incorporated in a

IR phototransistor

Abstract: phototransistor application circuit IR transmission APP4467 MAX6848 4467
Contextual Info: Maxim > App Notes > Microprocessor supervisor circuits Keywords: Infrared, IR, phototransistor, microcontroller Jul 28, 2010 APPLICATION NOTE 4467 Wake up and hear the IR Abstract: Receiving infrared IR signals while conserving system power is difficult, and typically requires the inclusion of complex

methane gas sensor NDIR

Abstract: NDIR gas sensor NATURAL GAS SENSOR Thermopile ndir methane gas sensor "Pyroelectric Detectors" IR Sensor alarm circuit GAS SENSOR methane sensor pyroelectric sensor
Contextual Info: Overview The new IR Natural Gas Sensor by PerkinElmer was designed in response to OEMs’ needs for a highly reliable natural gas detection solution. The IR Natural Gas Sensor, part of PerkinElmer’s new GasDetect IR family, uses non-dispersive infrared radiation

Contextual Info: QBED8160 5mm IR Lamp - QT-Brightek Lamp Series 5mm IR Lamp LED Part No.: QBED8160 Product: QBED8160 Date: March 27, 2014 Version# 1.0

Contextual Info: QBED8340 5mm IR Lamp - QT-Brightek Lamp Series 5mm IR Lamp LED Part No.: QBED8340 Product: QBED8340 Date: March 27, 2014 Version# 1.0

5mm ir receiver

Abstract: IR 5MM receiver
Contextual Info: QBED8120 5mm IR Lamp - QT-Brightek Lamp Series 5mm IR Lamp LED Part No.: QBED8120 Product: QBED8120 Date: March 27, 2014 Version# 1.1

SFH309

Abstract: SFH 30A
Contextual Info: SFH309 DAYLIGHT FILTER SFH309F SIEMENS SILICON NPN PHOTOTRANSISTOR FEATURES Daylight Filter-SFH309F Narrow Acceptance Angle, 24° High Reliability Low Cost Good Linearity No Testable Degradation Wide Temperature Range Matches IR Emitter SFH409 Same Package as IR Emitter SFH487

Contextual Info: NJL7302L-F3/F5 Ambient Light Sensor GENERAL DESCRIPTION The NJL7302L-F3/F5 is the phototransistor with spectral response similar to human eyes and wide directivity. FEATURES 1. High IR reduction IR reduction ratio 0.007 @850nm,λp=100% 2. Lead pin package

BPV11F

Contextual Info: BPV11F Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters l p 900nm .

Contextual Info: NJL7302L-F3/F5 Ambient Light Sensor GENERAL DESCRIPTION The NJL7302L-F3/F5 is the phototransistor with spectral response similar to human eyes and wide directivity. FEATURES 1. High IR reduction IR reduction ratio 0.007 @850nm,λp=100% 2. Lead pin package

BPV11F

Abstract: IC AN 8249
Contextual Info: BPV11F Vishay Telefunken Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters l p

IR phototransistor

Abstract: AD672 INHX8M 009f 30D7 college Z 00103 PIC12C671 PIC12C672 0000004F
Contextual Info: Infra Red Infra Red Monitor Author: Mark Lemay Quebec, Canada email: MLemay@CollegeShawinigan.qc.ca Block Diagram: PIC12C671 APPLICATION OPERATION The application of my IR monitor is to check an IR emitting device such as a TV Video remote controller. This IR monitor requires only 7 resistors, 4 LEDs, 1

Contextual Info: BPV11F VlSfrlAY Vishay Telefunken Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-13A plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters X p ^ 900nm .

BPV11F

Contextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters l p

BPV11F

Abstract: 8239 BPV11 Vishay Telefunken Phototransistor
Contextual Info: BPV11F Vishay Telefunken Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters l p

BPV11F

Contextual Info: BPV11F Vishay Telefunken Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters l p

Q62702-P1819

Abstract: NA010
Contextual Info: GaAlAs-IR-Lumineszenzdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor SFH 7221 Wesentliche Merkmale Features • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar

BPV11F

Abstract: National 8250
Contextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters λ p ≥ 900 nm .

Q62702-P1819

Abstract: 0083CA
Contextual Info: GaAlAs-IR-Lumineszensdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor SFH 7221 Vorläufige Daten / Preliminary Data Wesentliche Merkmale • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung

Q62702-P1819

Contextual Info: GaAlAs-IR-Lumineszensdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor SFH 7221 Vorläufige Daten / Preliminary Data Wesentliche Merkmale • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung

BPV11F

Contextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters λ p ≥ 900 nm .

TEMIC S289P

Abstract: S289P Telefunken Phototransistor
Contextual Info: S289P Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters with lp >850nm. A plastic

BPV11F

Contextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters λ p ≥ 900 nm .

BPV11F

Contextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters λ p ≥ 900 nm .