IR PHOTODETECTOR Search Results
IR PHOTODETECTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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ir led PHOTODIODE
Abstract: ir sensor for object detection using led IR object DETECTOR IR Sensor transmitter and receiver diode ir sensor simple circuit ir photodiode amplifier ir proximity sensor IR photodiode sensor ir transmitter receiver sensors abstract of Touch screen sensor
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10kHz, MAX4230) 10kHz MAX4230: com/an4622 AN4622, APP4622, Appnote4622, ir led PHOTODIODE ir sensor for object detection using led IR object DETECTOR IR Sensor transmitter and receiver diode ir sensor simple circuit ir photodiode amplifier ir proximity sensor IR photodiode sensor ir transmitter receiver sensors abstract of Touch screen sensor | |
IR EmittersContextual Info: SIEMENS Si-Foto-Detektoren, IR-Lumineszenzdioden, Lichtschranken Si-Photodetectors, IR Emitters, Light Barriers Data Book 03.96 |
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Contextual Info: TEKS6400 Vishay Semiconductors CMOS Photodetector with Logic Output Description TEKS6400 is a high sensitive CMOS Photo Schmitt Trigger in a sideview plastic package with spherical lens. The integrated IR filter is matched to IR emitters, λ = 950 nm. TSKS5400 is the compatible IR emitter for design of |
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TEKS6400 TEKS6400 TSKS5400 08-Apr-05 | |
Contextual Info: TEKS6400 Vishay Semiconductors CMOS Photodetector with Logic Output Description TEKS6400 is a high sensitive CMOS Photo Schmitt Trigger in a sideview plastic package with spherical lens. The integrated IR filter is matched to IR emitters, λ = 950 nm. TSKS5400 is the compatible IR emitter for design of |
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TEKS6400 TEKS6400 TSKS5400 D-74025 23-Aug-05 | |
Contextual Info: TEKS6400 Vishay Semiconductors CMOS Photodetector with Logic Output Description TEKS6400 is a high sensitive CMOS Photo Schmitt Trigger in a sideview plastic package with spherical lens. The integrated IR filter is matched to IR emitters, λ = 950 nm. TSKS5400 is the compatible IR emitter for design of |
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TEKS6400 TEKS6400 TSKS5400 08-Apr-05 | |
TRANSISTOR SMD MARKING CODE 3401
Abstract: Q65110A6342 TRANSISTOR SMD MARKING CODE 702 fototransistor BPW 39 SFH415U sidelooker smd DIODE transistor smd 3401 SFH 4740 LPT80 BPY62
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GEMY6050 TRANSISTOR SMD MARKING CODE 3401 Q65110A6342 TRANSISTOR SMD MARKING CODE 702 fototransistor BPW 39 SFH415U sidelooker smd DIODE transistor smd 3401 SFH 4740 LPT80 BPY62 | |
phototransistor ultraviolet
Abstract: foto sensor
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16 ohm 0.25w SPEAKER
Abstract: AN1114
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HSDL-3007 HSDL-3007 IEC825 625mm) 5989-1680EN 16 ohm 0.25w SPEAKER AN1114 | |
sfh 309 frContextual Info: SIEMENS GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 487 P • GaAIAs-IR-Lumineszenzdiode, hergestellt im Schmelzepitaxieverfahren • Hohe Zuverlässigkeit • Enge Toleranz: Chipoberfläche/ Bauteiloberkante • Hohe Impulsbelastbarkeit |
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SFH487P switc53SbG5 950nm fl235b05 sfh 309 fr | |
PHOTODIODE PD 20
Abstract: photodiode responsivity 1550nm 2 photodetector 1300nm photodetector PIN 1300nm PD-1375-ir Photodetector 1550nm pin photodetector 1300nm sm 1040 InGaAs Photodiode 1550nm photodiode responsivity 1550nm with FC connector
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PD-1375-ir 1300/1550nm 622Mb/s) PHOTODIODE PD 20 photodiode responsivity 1550nm 2 photodetector 1300nm photodetector PIN 1300nm PD-1375-ir Photodetector 1550nm pin photodetector 1300nm sm 1040 InGaAs Photodiode 1550nm photodiode responsivity 1550nm with FC connector | |
cdte
Abstract: Photoconductor 86X10
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cmHz11/W cdte Photoconductor 86X10 | |
Contextual Info: AM-07 OPERATION MANUAL Amplifier for MID-IR PDs 1. Application The driver AM-07 is designed for signal extraction and detection from Mid-IR photodiodes. 2. Features • The possibility of discrete changing of current amplification to raise the measurement |
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AM-07 AM-07 AM-07. | |
Q62703-Q516
Abstract: diode SR 315
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fex06306 Q62703-Q516 diode SR 315 | |
GP2AP002S00FContextual Info: GP2AP002S00F < Attached Document > 【1】Functional Explanation 1-1 Abstract GP2AP002S00F makes successive binary decisions whether reflective object exists, which GP2AP002S00F irradiates IR light to and receives its reflection from, according to its internal algorithm. GP2AP002S00F controls a built-in IR |
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GP2AP002S00F GP2AP002S00F 940nm) OP13019EN Attachment-18 | |
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P1 3003
Abstract: Marking Code SMD databook AUDIO IRDA TRANSMITTER lexan 940 60RH RF remote control circuit diagram AN1114 circuit diagram of rc transmitter and receiver Infrared Remote-control Receiver IrDA Data Link Design Guide
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HSDL-3003 HSDL-3003 P1 3003 Marking Code SMD databook AUDIO IRDA TRANSMITTER lexan 940 60RH RF remote control circuit diagram AN1114 circuit diagram of rc transmitter and receiver Infrared Remote-control Receiver IrDA Data Link Design Guide | |
AN1114
Abstract: IrDA Data Link Design Guide IRDA TRANSMITTER RF remote control circuit diagram FDC37C669 FDC37N769 HSDL-3003 HSDL-3003-001 HSDL-3003-021 very long range ir remote control
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HSDL-3003 HSDL-3003 5989-2298EN 5989-3133EN AN1114 IrDA Data Link Design Guide IRDA TRANSMITTER RF remote control circuit diagram FDC37C669 FDC37N769 HSDL-3003-001 HSDL-3003-021 very long range ir remote control | |
UM 7108 F
Abstract: photoconductor cdznte 2TE12 IR photodetectors AN 7108
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Contextual Info: SIEM ENS GaAIAs-IR-Lummeszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 485 P Wesentliche Merkmale Features • G aA IA s-IR -Lum ineszenzdiode, hergestellt im Schm elzepitaxieverfahren • Enge Toleranz: Chipoberfläche/ Bauteiloberkante • G ute spektrale A npassung an |
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SFH485P fi53StjQS 0057fl33 | |
Q62703-Q517Contextual Info: SIEMENS GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) Cathode SFH 487 P GEX06308 Approx. weight 0.3 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale Features • GaAIAs-IR-Lumineszenzdiode, hergestellt |
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GEX06308 Q62703-Q517 | |
fujitsu SFP optical module
Abstract: FIM32030 STM-16 2 pin ir transmitter
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OC-48 FIM32030 48832Gbps 1550nm SFF-8472 FIM32030 FCSI1003M200 fujitsu SFP optical module STM-16 2 pin ir transmitter | |
Contextual Info: SIEMENS GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 487 P 4.0 " l 3.6 p -& Ï0.4 Cathode G EX06308 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • GaAIAs-IR-Lumineszenzdiode, hergestellt |
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EX06308 OHR01894 | |
2 pin ir transmitter
Abstract: FIM32020 STM-16 SFP CML
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OC-48 FIM32020 48832Gbps 1310nm SFF-8472 FIM32020 FCSI1003M200 2 pin ir transmitter STM-16 SFP CML | |
EI 3003Contextual Info: Agilent HSDL-3003 IrDA Data Compliant Low Power 115.2 kbit/s with Remote Control Infrared Transceiver Data Sheet Description The HSDL-3003 is a small form factor enhanced infrared IR transceiver module that provides the capability of (1) interface between logic and IR signals for |
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HSDL-3003 5988-9510EN EI 3003 | |
lexan 920A
Abstract: AN1114 FDC37C669 FDC37N769 HSDL-3003 HSDL-3003-021 AN-1114 IRDA TRANSMITTER
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HSDL-3003 HSDL-3003 5988-9510EN lexan 920A AN1114 FDC37C669 FDC37N769 HSDL-3003-021 AN-1114 IRDA TRANSMITTER |