IR P-CHANNEL MOSFET Search Results

IRFP340

Abstract: IRFP-341 IRFP341
Contextual Info: h a r r is s e m ic o n d u c to r IR F P 3 4 0 , IR F P 3 4 1 , IR F P 3 4 2 , IR F P 3 4 3 11A and 8.7A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 11A and 8.7A, 350V and 400V • Linear Transfer Characteristics

GH mosfet

Abstract: FDS6815
Contextual Info: FDS6815 July 1999 P /\IR C H II_D ADVANCE INFORMATION EMl C O N D U C TO R ! FDS6815 Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced

Contextual Info: P D -9 .1 5 3 3 International IQ R Rectifier IRFR/U5410 PRELIMINARY HEXFET Power MOSFET Ultra Low O n-Resistance P-Channel Surface M ount IR FR 5410 Straight Lead (IR FU 5410) A dvanced Process Technology Fast Switching Fully Avalanche Rated Vdss = -1 0 0 V

irfp 9240

Abstract: irfp 240 IRFP p-channel irfp9240
Contextual Info: HARRIS IR F P 9 2 4 0 /P 9 2 4 1 IR FP 9242/P 9243 Avalanche Energy Rated P-Channel Power MOSFETs May 1992 Package Features T O -2 4 7 • -10A and -12A , -2 0 0 V and -15 0 V T O P VIEW • fDS ON = 0 .5 0 ft and 0.7ft • Single Pulse Avalanche Energy Rated

Contextual Info: H A R R IS sem iconductor IR F 9230, IR F 9231, IR F9232, IR F 9233 -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs J a n u a ry 1998 Features Description • -5.5A a n d -6 .5 A ,-1 5 0 V a n d -2 0 0 V • High Input Impedance

F9232

Contextual Info: IR F 9230, IR F9231 IR F 9232, IR F9233 HARRIS Avalanche Energy Rated P-Channel Power MOSFETs August 1991 Features Package T 0 -2 0 4 A A BOTTOM VIEW • - 5 .5 A a n d - 6 .5 A , - 1 5 0 V a n d - 2 0 0 V • r D S O N = 0 . 8 0 Î Î a n d 1 . 2 f i SOURCE

Contextual Info: November 1998 F A IR C H IL D SEM IC ONDUCTO R tm FDN336P Single P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the

LS025

Abstract: ci 415A FDG6302P SC70-6
Contextual Info: July 1999 F = A IR O H II_ D SEMICONDUCTOR tm FDG6302P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This

Contextual Info: October 1998 F A IR C H IL D SEM IC O N D UC TO R tm FDS6675 Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize

IRF9510 harris

Contextual Info: h a r r is s e m ic o n d u c to r I R F 9 5 1 0 , I R F 9 5 1 1, IR F 9 5 1 2 , IR F 9 5 1 3 -2.5A and -3.0A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs January 1998 Description Features -2.5A and -3.0A, -80V and -100V High Input Impedance These are P-Channel enhancem ent mode silicon gate

Contextual Info: F A IR C H IL D Ju,y1999 SEMICONDUCTOR tm FDG6304P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

IRF9511

Abstract: IRF9513 IRF9510 IRF9512 100-C
Contextual Info: Rugged Power MOSFETs File Number 2214 IR F9510, IR F 9 5 1 1 IR F9512, IR F9513 Avalanche-Energy-Rated P-Channel Power MOSFETs -2.5A, a n d -3.0A, -60V a n d -100V rDsion = 1.20 a n d 1.60 t e r m in a l d ia g r a m Feature*: o • S in g le pulse a va lan ch e e n e rg y rated

Contextual Info: International [^Rectifier PD - 9.1099B IR F 7 1 0 7 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching N-CHANNEL MOSFET

Contextual Info: F A IR C H IL D Ju|y1996 SEM ICONDUCTO R NDS8958 Dual N & P-Channel Enhancement Mode Field Effect Transistor G eneral Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,

IRFP9140N

Abstract: 100v 23A P-Channel MOSFET 9140N 1492-A
Contextual Info: I , ,• I P D - 9 .1492A In ternational 10R Rectifier IR F P 9140N P R E L IM INARY HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175 °C Operating Temperature • P-Channel • Fast Switching • Fully Avalanche Rated

Contextual Info: F /\IR C H II_ D June 1999 M IC D N D U C T D R i FDC638P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

Contextual Info: F A IR C H IL D October 1998 S E M I C O N D U C T O R tm FDS4435 Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the

Contextual Info: F A IR C H II- D S E M IC O N D U C T O R November 1998 tm FDS65 75 Single P-Channel, Logic Level, PowerTrench General Description MOSFET Features This P-Channel Logic Level M O SFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored to minimize

Contextual Info: November 1998 F A IR C H IL D S E M IC O N D U C T O R M FDN336P Single P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the

Contextual Info: May 1998 F A IR C H IL D iM IC D N D U C T O R ! FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high

Contextual Info: International l ü Rectifier Provisional Data Sheet No. PD-9.1392 AVALANCHE ENERGY AND dv/dt RATED IR H 9 2 5 0 HEXFET TRANSISTOR P-CHANNEL RAD HARD -200 Volt, 0.315Q, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

IRLML6402

Abstract: irlml6402 sot23 ir JT2000 IRLML2803 Micro3 AN-994 IRLML2402 IRLML5103 IRLML6302 marking BSs sot23
Contextual Info: P D -93755 International 3BR Rectifier IR L M L 6 4 0 2 HEXFET Power MOSFET Ultra Low O n-R esistance P-Channel M O SFET SO T-23 Footprint Low Profile <1.1 mm A vailable in Tape and Reel Fast Switching V d s s = -2 0 V RüS(on) = 0.065Î2 Description These P-Channel MOSFETs from International Rectifier utilize

Contextual Info: 4 3 0 5 2 7 1 □ □ 5 4 5 ci? tBT • H a r r is HAS IR F F 9120, IR F F 9121 IR F F 9122, IR F F 9123 Avalanche Energy Rated P-Channel Power MOSFETs January 1994 Features Package T 0 -2 0 5 A F • -3.5 A and -4A , -8 0 V and -1 0 0 V BOTTOM VIEW • rDS ON = o .e o n and 0.80 H

FR9214

Contextual Info: International IO R Rectifier P D - 9.1658 IRFR/U9214 PRELIMINARY HEXFET Power MOSFET P-Channel Surface Mount IR F R 9214 StraightLead (IRFU9214N Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -250V R ü S (o n ) = 3 . 0 C Ì b = -2.8A