IR MOSFETS Search Results

Contextual Info: FREDERICK COMPONENTS V C POW ER M O SF E T s VD S I D 25TC 1 0 0 °C Rd A (V ) s W ) C IS S td m *D (o h m s) (P F ) (A ) (W ) P ackage IR F 1 2 0 IR F 1 2 2 IR F 1 2 3 IR F 1 3 0 IR F 1 3 1 IR F 1 3 2 IR F 1 3 3 IR F 1 4 0 IR F 1 4 1 IR F 1 4 2 IR F 1 4 3

Contextual Info: H A R R IS sem iconductor IR F R 4 2 0 , IR F R 42 1 , IR F R 4 2 2 , ¡R F U 4 2 0 , IR F U 4 2 1 , IR F U 4 2 2 2.2k and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 2.2A and 2.5A, 450V and 500V • High Input Impedance

IRF150R

Abstract: IRF151R IRF152R IRF153R
Contextual Info: Rugged Power MOSFETs. File Num ber 2002 IR F150R , IR F15 1 R , IR F 152R , IR F153R Avalanche Energy Rated N-Channel Power MOSFETs 3 3 A an d 4 0 A , 6 0 V -1 0 0 V ros on = 0 .0 5 5 0 an d 0 .0 8 fi N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

Contextual Info: H A R R IS sem iconductor IR F 9230, IR F 9231, IR F9232, IR F 9233 -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs J a n u a ry 1998 Features Description • -5.5A a n d -6 .5 A ,-1 5 0 V a n d -2 0 0 V • High Input Impedance

Contextual Info: HARRIS s e m ic o n d u c to r IR F R 1 2 0 , IR F R 1 2 1 , IR F U 1 2 0 , IR F U 1 2 1 8.4A, 80V AND 100V, 0.27 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8.4A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

F9232

Contextual Info: IR F 9230, IR F9231 IR F 9232, IR F9233 HARRIS Avalanche Energy Rated P-Channel Power MOSFETs August 1991 Features Package T 0 -2 0 4 A A BOTTOM VIEW • - 5 .5 A a n d - 6 .5 A , - 1 5 0 V a n d - 2 0 0 V • r D S O N = 0 . 8 0 Î Î a n d 1 . 2 f i SOURCE

IRFP340

Abstract: IRFP-341 IRFP341
Contextual Info: h a r r is s e m ic o n d u c to r IR F P 3 4 0 , IR F P 3 4 1 , IR F P 3 4 2 , IR F P 3 4 3 11A and 8.7A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 11A and 8.7A, 350V and 400V • Linear Transfer Characteristics

IRF9511

Abstract: IRF9513 IRF9510 IRF9512 100-C
Contextual Info: Rugged Power MOSFETs File Number 2214 IR F9510, IR F 9 5 1 1 IR F9512, IR F9513 Avalanche-Energy-Rated P-Channel Power MOSFETs -2.5A, a n d -3.0A, -60V a n d -100V rDsion = 1.20 a n d 1.60 t e r m in a l d ia g r a m Feature*: o • S in g le pulse a va lan ch e e n e rg y rated

Contextual Info: 4 3 0 5 2 7 1 □ □ 5 4 5 ci? tBT • H a r r is HAS IR F F 9120, IR F F 9121 IR F F 9122, IR F F 9123 Avalanche Energy Rated P-Channel Power MOSFETs January 1994 Features Package T 0 -2 0 5 A F • -3.5 A and -4A , -8 0 V and -1 0 0 V BOTTOM VIEW • rDS ON = o .e o n and 0.80 H

Contextual Info: • 43Q2E71 0GS3Taa 2 H A R IR IS 3tj2 ■ HAS IR F 520/521/522/523 IR F520R/521R /522R /523R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -22 0 A B • 8A and 9.2A, 80V - 100V TOP VIEW • rDS °n) = 0.27S1 and 0 .3 6 fl

international rectifier power mosfets catalog

Abstract: inverter SCR
Contextual Info: Structural Blueprint for International Rectifier WWW site HOME Search Product Information Latest Updates About IR Contact IR Site Search Datasheets What's New Employment Product Information Center ir+ Part Number Search Short Form Catalog New Products Investor Relations

irf*234 n

Contextual Info: HARRIS SEMICOND SECTOR 40E » • 430 2 2 7 1 GOBM'RQH b « H A S 33 HARRIS IR F234, IRF235 IR F236, IR F237 August 1991 N-Channel Power MOSFETs Avalanche-Energy Rated l\ Features Package T 0 -2 0 4 A A • 8.1A and 6 .SA, 2 7 5 V - 2 5 0V • rD S o n =

IFU120

Abstract: fu120 IFU-121 fr120 irfu121 Harris IRFR120 IRFU N-Channel Power MOSFETs a 4556
Contextual Info: m HARRIS IR FR 120/1R F R 121 IR F U 1 2 0 /IR F U 1 2 1 N-Channel Power MOSFETs Avalanche-Energy-Rated August 1991 Packages Features T 0 -2 S 1 A A TOP VIEW • 8.4A, 80V and 100V • rDS on = 0 .2 7 0 3 SOURCE • Single Pulse Avalanche Energy Rated DRAIN

f9640

Abstract: IRF9640 IRF9640 complementary IRF630 complementary IRF630 MOTOR CONTROL CIRCUIT IRF9640 audio irf9640 mosfet C368 IRF9642 IRF9643
Contextual Info: HE D | MñSSMSa GOGûbia 2 I Data Sheet No. PD-9.422A T - ï 'ÿ 'L 3 INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IO R IRF964Q IR FS 64Ì FV-CHAIMIMEL 2 0 0 VOLT POWER MOSFETs IR F9642 IR F0643 -2 0 0 Volt, 0.5 Ohm HEXFET T0-220AB Plastic Package

Contextual Info: Products From IR Table of Contents Page HEXFET Power MOSFETs . 282 IGBT .

Contextual Info: 430B271 0054552 47D • h a f r r i s HAS IR F9520, IRF9521 IR F 9 5 22 , IR F 9 5 23 Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 1 9 9 4 Package Features TO -220A B • -5 A and -6 A , -8 0 V and -1 0 0 V TOP VIEW • rD S O N = 0 . 6 f l a n d 0 . 8 i l

IRF22

Abstract: R/Detector/"detect18 ic"/"CD"/F223
Contextual Info: IR F220, IR F 22 1 IR F222, IRF22 3 2 HARRIS N -Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 Features Package TO -20 4 A A BOTTOM VIEW • 4.0A and 5.0A, 150V - 200V • rDS(on = 0 .8 0 and 1 .2 fi • SOA is Power-Dissipation Limited

423R

Abstract: f423 IR 423
Contextual Info: 33 HARRIS IR F F420/421/422/423 IR FF420R/421 R /422R /423R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO-205AF • 1.4A and 1.6A, 450V - 500V • rDS on = 3.0(1 and 4.0fi • Singla Pulsa Avalancha Energy Rated* GATE SOURCE

ifr110

Contextual Info: IR F R 1 1 0 , IR F U 1 1 0 Semiconductor D ata S h eet 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the

j332

Abstract: J333 g559 IRFJ330 IRFJ331 IRFJ332 IRFJ333 9405A w sa 45a diode
Contextual Info: h e D I MassMsa a c m s a o a | Data Sheet No. PD-9.405A IN TERNATI ONAL RE CT IF IER r IN T E R N A T IO N A L H E X F E T - 3 R E C T IF IE R ? - T 6 ? & R IR F J 3 3 0 T R A N S IS T O R S IR F J 3 3 1 N-GHANNEL POWER MQSFETs IR F J 3 3 2 IR F J 3 3 3

Contextual Info: •I 4302271 00S415S 33 HARRIS SSb ■ H AS IR FF230/231/232/233 IR FF230R /231R /232R /233R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -205A F • 4.5A and 5.5A, 150V - 200V • rDS on = 0 .4 0 and 0.6 0 • Single Pulse Avalanche Energy Rated*

9517A

Abstract: irf 4110 irfu9022 IRFR9020 IRFR9022 IRFU9020 7n20 LG 57A 1U40
Contextual Info: HE 0 | 4Û55452 QQQûaib ü T-37-25 Data Sheet No. PD-9.517A | INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFRS020 IR F R 9 0 S S IR F U 9 0 2 0 IR F U 9 Q S 2 P -C H A N N E L Product Summary -50 Volt, 0.20 Ohm HEXFET

FP450

Abstract: 451R mosfet 4532 IRFP452 4532 MOSFET
Contextual Info: 2 3 H A R R IS IR FP450/451/452/453 IR FP450R /451R /452R /453R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 4 7 • 12A and 14A, 450V - 500V TOP VIEW • rDS on = 0 .4 ii and 0 .5 0 • Single Pulse Avalanche Energy Rated*

F730R

Contextual Info: • tJ303271 [1054053 ÛT2 g HARRIS ■ HAS IR F730/731/732/733 IR F730R /731R /732R /733R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B • 4.SA and S.5A, 350V - 400V TOP VIEW • rp s (o n = 1 -0 0 and 1 .5 ÎÏ