IR MOSFETS Search Results

Contextual Info: FREDERICK COMPONENTS V C POW ER M O SF E T s VD S I D 25TC 1 0 0 °C Rd A (V ) s W ) C IS S td m *D (o h m s) (P F ) (A ) (W ) P ackage IR F 1 2 0 IR F 1 2 2 IR F 1 2 3 IR F 1 3 0 IR F 1 3 1 IR F 1 3 2 IR F 1 3 3 IR F 1 4 0 IR F 1 4 1 IR F 1 4 2 IR F 1 4 3

IRF150R

Abstract: IRF151R IRF152R IRF153R
Contextual Info: Rugged Power MOSFETs. File Num ber 2002 IR F150R , IR F15 1 R , IR F 152R , IR F153R Avalanche Energy Rated N-Channel Power MOSFETs 3 3 A an d 4 0 A , 6 0 V -1 0 0 V ros on = 0 .0 5 5 0 an d 0 .0 8 fi N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

Contextual Info: H A R R IS sem iconductor IR F 9230, IR F 9231, IR F9232, IR F 9233 -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs J a n u a ry 1998 Features Description • -5.5A a n d -6 .5 A ,-1 5 0 V a n d -2 0 0 V • High Input Impedance

Contextual Info: HARRIS s e m ic o n d u c to r IR F R 1 2 0 , IR F R 1 2 1 , IR F U 1 2 0 , IR F U 1 2 1 8.4A, 80V AND 100V, 0.27 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8.4A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

F9232

Contextual Info: IR F 9230, IR F9231 IR F 9232, IR F9233 HARRIS Avalanche Energy Rated P-Channel Power MOSFETs August 1991 Features Package T 0 -2 0 4 A A BOTTOM VIEW • - 5 .5 A a n d - 6 .5 A , - 1 5 0 V a n d - 2 0 0 V • r D S O N = 0 . 8 0 Î Î a n d 1 . 2 f i SOURCE

IRFP340

Abstract: IRFP-341 IRFP341
Contextual Info: h a r r is s e m ic o n d u c to r IR F P 3 4 0 , IR F P 3 4 1 , IR F P 3 4 2 , IR F P 3 4 3 11A and 8.7A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 11A and 8.7A, 350V and 400V • Linear Transfer Characteristics

IRF9511

Abstract: IRF9513 IRF9510 IRF9512 100-C
Contextual Info: Rugged Power MOSFETs File Number 2214 IR F9510, IR F 9 5 1 1 IR F9512, IR F9513 Avalanche-Energy-Rated P-Channel Power MOSFETs -2.5A, a n d -3.0A, -60V a n d -100V rDsion = 1.20 a n d 1.60 t e r m in a l d ia g r a m Feature*: o • S in g le pulse a va lan ch e e n e rg y rated

irf*234 n

Contextual Info: HARRIS SEMICOND SECTOR 40E » • 430 2 2 7 1 GOBM'RQH b « H A S 33 HARRIS IR F234, IRF235 IR F236, IR F237 August 1991 N-Channel Power MOSFETs Avalanche-Energy Rated l\ Features Package T 0 -2 0 4 A A • 8.1A and 6 .SA, 2 7 5 V - 2 5 0V • rD S o n =

IFU120

Abstract: fu120 IFU-121 fr120 irfu121 Harris IRFR120 IRFU N-Channel Power MOSFETs a 4556
Contextual Info: m HARRIS IR FR 120/1R F R 121 IR F U 1 2 0 /IR F U 1 2 1 N-Channel Power MOSFETs Avalanche-Energy-Rated August 1991 Packages Features T 0 -2 S 1 A A TOP VIEW • 8.4A, 80V and 100V • rDS on = 0 .2 7 0 3 SOURCE • Single Pulse Avalanche Energy Rated DRAIN

sj 76a

Abstract: 377D IRFF430 IRFF431 IRFF432 IRFF433 IRF 250V 100A g385 125CV
Contextual Info: HE D | 4055452 0GGc14Qb 3 | Data Sheet No. PD-9.377D I«R INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER T-39-09 HEXFET TRA N SISTO RS IR FF4 3 0 IRFF431 N-CHANNEL POWER MOSFETs TO-39 P A C K A G E IR FF4 3 2 IR FF4 3 3 500 Volt, 1.5 Ohm HEXFET

IRF22

Abstract: R/Detector/"detect18 ic"/"CD"/F223
Contextual Info: IR F220, IR F 22 1 IR F222, IRF22 3 2 HARRIS N -Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 Features Package TO -20 4 A A BOTTOM VIEW • 4.0A and 5.0A, 150V - 200V • rDS(on = 0 .8 0 and 1 .2 fi • SOA is Power-Dissipation Limited

ifr110

Contextual Info: IR F R 1 1 0 , IR F U 1 1 0 Semiconductor D ata S h eet 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the

j332

Abstract: J333 g559 IRFJ330 IRFJ331 IRFJ332 IRFJ333 9405A w sa 45a diode
Contextual Info: h e D I MassMsa a c m s a o a | Data Sheet No. PD-9.405A IN TERNATI ONAL RE CT IF IER r IN T E R N A T IO N A L H E X F E T - 3 R E C T IF IE R ? - T 6 ? & R IR F J 3 3 0 T R A N S IS T O R S IR F J 3 3 1 N-GHANNEL POWER MQSFETs IR F J 3 3 2 IR F J 3 3 3

9517A

Abstract: irf 4110 irfu9022 IRFR9020 IRFR9022 IRFU9020 7n20 LG 57A 1U40
Contextual Info: HE 0 | 4Û55452 QQQûaib ü T-37-25 Data Sheet No. PD-9.517A | INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFRS020 IR F R 9 0 S S IR F U 9 0 2 0 IR F U 9 Q S 2 P -C H A N N E L Product Summary -50 Volt, 0.20 Ohm HEXFET

u212

Abstract: IRFR122 u210 irfr210 U2-12
Contextual Info: tME T> SAMSUNG ELECTRONICS INC m 7Tb4142 GD1233S ñ3ñ « S n G K IR F R 2 1 0/212 IR F U 2 1 0/212 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R q s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

IRF251

Contextual Info: • 4302271 0053^23 30b [gj HARRIS ■ HAS IR F250/251/252/253 IR F250R /251R /252R /253R N-Channel Power MOSFETs Avalanche Energy Rated* A ugust 1 9 9 1 Package Features T O -2 0 4 A E • 25A and 30A, 150V - 200V BOTTOM VIEW • rDS on = 0 .0 8 5 fl and 0.120fJ

f9240

Abstract: irf9240r irf 44 n rf924
Contextual Info: HARRIS IR F 9 2 40 , IR F9241 IRF9242, IRF9243 Avalanche Energy Rated P-Channel Power MOSFETs A ugust 1991 Features Package T O -2Û 4A A BOTTOM VIEW • -9A and -11A , -15 0 V and -200V • rDS ON = 0 .5 0 0 and 0 .7 ÎÎ • Single Pulse Avalanche Energy Rated

Contextual Info: Payment Systems Table of Contents Communication, GPRS. 3 Communication, IR

IR9620

Abstract: IRF9620 RF9622 IRF9622 IRF9621 IRF9623 IRF high current p-channel RF9623
Contextual Info: H A R R IS IR F 9 6 2 0 , IR F 9 6 2 1 IRF9622, IRF9623 Avalanche Energy Rated P-Channe! Power MOSFETs August 1991 F ea tu re s Package T0-220A B TOP VIEW • -3 A and -3.5A, -150V and -20 0 V • rDS ON = and 2.4Q • Single Pulse Avalanche Energy Rated

F9622

Abstract: IRF9622 NP-Q40 F962
Contextual Info: HARRIS IR F9620, IRF9621 IR F9622, IRF9623 Avalanche Energy Rated P-Channel Power MOSFETs August 1991 F e a tu re s Package T 0 -2 2 0 A B • -3A and -3.5A , -1 5 0 V and -200V • r D S O N TOP VIEW = 1 -5 0 and 2 .4 Cl • Single Pulse Avalanche Energy Rated

Contextual Info: Data Sheet No. PD60019J International 1QR Rectifier_ IR 2 1 3 0 /IR 2 1 3 2 PHASE BRIDGE DRIVER 3 Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune

IRF9130 mosfet

Abstract: IRF9130 501 mosfet transistor IRF9132 gate driver for mosfet irf9130 IRF9131 IRF9133 92CS-43394
Contextual Info: Rugged Power MOSFETs File N um ber 2220 IR F9130, IRF9131 IRF9132, IR F9133 Avalanche-Energy-Rated P-Channel Power MOSFETs - 1 0 A Td s a n d o n = - 1 2 A , 0 . 3 0 0 - 6 0 V a n d a n d TERMINAL DIAGRAM - 1 0 0 V 0 . 4 0 0 Features: • Single pulse avalanche energy rated

IRF242R

Abstract: free IR circuit diagram 1RF241 IRF240R
Contextual Info: JJ H A R R I S IR F240/241/242/243 IR F240R/241R/242R/243R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features TO-2Q4AE • 16A and 18A, 2 0 0 V ,1 5 0 V • r D S °n) = 0 -1 8 0 and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*

HY9230CM

Contextual Info: Government and Space Products International Rectifier IÖ R HEXFET <§> Power MOSFETs Radiation Hardened TO-257AA N-Channel 1 R H Y 7 I3 0 C M 100 .18 14.4 9.1 100 75 91274 H28 IR H Y 7 2 3 0 C M 200 .4 9.4 6 100 75 91273 H2S IR H Y 8 1 3 0 C M 100 .18 14.4