IR DIODE 940 NM Search Results

REFLECTIVE OBJECT SENSOR

Abstract: ir sensor for object detection using led ir sensor 0038 OBJECT SENSOR OPB609 OPB609AX OPB609GU OPB609RA OP508 LED 020 ir sensor
Contextual Info: Reflective Object Sensor OPB609 Series Features: • • • • OP609 emitter 940 nm IR-LED Unfocused for sensing diffuse surface Low-cost plastic housing High-speed phototransistor output Description: The OPB609 consists of an 940 nm, Light Emitting Diode (LED) and an NPN silicon Phototransistor, which are

ir sensor for object detection using led

Abstract: vibra tite OPB609AX REFLECTIVE OBJECT SENSOR OPB609 OPB609GU OPB609RA reflective sensor 4 pin
Contextual Info: Reflective Object Sensor OPB609 Series Features: • • • • RA OPB609 emitter 940 nm IR-LED Unfocused for sensing diffuse surface Low-cost plastic housing High-speed phototransistor output GU AX Description: The OPB609 consists of an 940 nm, Light Emitting Diode (LED) and an NPN silicon Phototransistor, which are

ir sensor 0038

Abstract: LED 020 ir sensor OBJECT SENSOR ir sensor for object detection using led REFLECTIVE OBJECT SENSOR reflective sensor 4 pin OPB609GU
Contextual Info: Reflective Object Sensor OPB609 Series Features: x x x x RA OP609 emitter 940 nm IR-LED Unfocused for sensing diffuse surface Low-cost plastic housing High-speed phototransistor output GU AX Description: The OPB609 consists of an 940 nm, Light Emitting Diode (LED) and an NPN silicon Phototransistor, which are

ir sensor 0038

Contextual Info: Reflective Object Sensor OPB609 Series Features: x x x x RA OP609 emitter 940 nm IR-LED Unfocused for sensing diffuse surface Low-cost plastic housing High-speed phototransistor output GU AX Description: The OPB609 consists of an 940 nm, Light Emitting Diode (LED) and an NPN silicon Phototransistor, which are

TB-94

Contextual Info: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength:  = 940 nm

FVOV6870

Abstract: MIL-HDBK-263 VISHAY Optoelectronics
Contextual Info: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm

Contextual Info: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength:  = 940 nm

Contextual Info: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength:  = 940 nm

VISHAY Optoelectronics

Abstract: FVOV6870 MIL-HDBK-263
Contextual Info: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm

Contextual Info: TB9414VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm

Contextual Info: TB9414VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm

Contextual Info: TS9414VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 0.355 x 0.355 x 0.17 • Peak wavelength: λ = 940 nm

Contextual Info: TS9410VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 0.250 x 0.250 x 0.17 • Peak wavelength:  = 940 nm

Contextual Info: TB9408VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: multi quantum well MQW • Dimensions chip (L x W x H in mm): 0.2 x 0.2 x 0.19 • Peak wavelength: λ = 940 nm

Contextual Info: TB9408VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: multi quantum well MQW • Dimensions chip (L x W x H in mm): 0.2 x 0.2 x 0.19 • Peak wavelength: λ = 940 nm

ir diode 940 nm

Abstract: LED55B LED56 LED55C LED56F 1N6264 1N6265 CQX14 CQX15 CQX16
Contextual Info: Optoelectronics Hermetic Light Emitting Diodes Part Number PO @ 100 mA IF mW min max VF @ 100 mA IF (V) max IR @ 3 V VR (µA) max Emission Angle in Degrees (°) @ 1/2 Power Wavelength (nm) λp TO-46 Diode Package (Convex Lens) 1N6264 6.00 – 1.7 10 16 940

Contextual Info: Sensors Infrared light emitting diode, cast type SIR-320ST3F The S IR -3 2 0 S T 3 F is a G a A s infrared light emitting d iode h o u se d in clear plastic. T h is device h a s a high lum inous efficiency and a 940 nm spectrum suitable for silicon detectors. It is small and at the sam e time h a s a wide radiation

B85 diode

Contextual Info: Sensors Infrared light emitting diode, cast type SIR-320ST3F The S IR -3 2 0 S T 3 F is a G a A s infrared light emitting d iode h o u se d in clear plastic. This device h a s a high lu m in ou s efficiency and a 940 nm spectrum suitable for silicon detectors. It is small and at the sa m e time ha s a wide radiation

QED234

Abstract: ir diode 940 nm sidelooker DIODE power diode package QEC121 QED233 QEC112 QEC113 QEC122 QEC123
Contextual Info: Optoelectronics Plastic Light Emitting Diodes Ie @ 100 mA IF mW/sr IR @ 5 V VR (µA) max Emission Angle in Degrees (°) @ 1/2 Power Wavelength (nm) λp min max VF @ 100 mA IF (V) max QEC112 6 30 1.7 10 24 940 QEC113 14 – 1.7 10 24 940 QEC121 14 – 1.9

VSML3710

Abstract: VSML3710-GS08
Contextual Info: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • • • • Package type: surface mount Package form: PLCC-2 Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75

VSML3710

Abstract: VSML3710-GS08 MA50NM
Contextual Info: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability

J-STD-020D

Abstract: VSML3710 VSML3710-GS08
Contextual Info: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability

TSAL6100 application

Abstract: TSAL6100 GaAs 1000 nm Infrared Diode,
Contextual Info: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity

TSAL6100

Abstract: high power infrared led
Contextual Info: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power