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    Contextual Info: TB9414VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm


    Original
    tb9414va2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength:  = 940 nm


    Original
    tb9414va2002/95/ec2002/96/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength:  = 940 nm


    Original
    tb9414va2002/95/ec2002/96/ec2011/65/eu+112-mar-12 PDF

    VISHAY Optoelectronics

    Abstract: FVOV6870 MIL-HDBK-263
    Contextual Info: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm


    Original
    tb9414va2002/95/ec2002/96/ec18-jul-08+3vishay optoelectronicsfvov6870mil-hdbk-263 PDF

    Contextual Info: TB9414VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm


    Original
    tb9414va2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    TB-94

    Contextual Info: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength:  = 940 nm


    Original
    tb9414va2002/95/ec2002/96/ec11-mar-11+1tb-94 PDF

    FVOV6870

    Abstract: MIL-HDBK-263 VISHAY Optoelectronics
    Contextual Info: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm


    Original
    tb9414va2002/95/ec2002/96/ec18-jul-08+3fvov6870mil-hdbk-263vishay optoelectronics PDF

    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Optoelectronics Bare Die Portfolio Infrared Emitters and Photo Detectors TABLE OF CONTENTS Introduction to Bare


    Original
    vmn-sg2200-1502 PDF