TB9408VA Search Results
TB9408VA Price and Stock
Vishay Intertechnologies TB9408VA-SF-FIr Emitter Wafer High Efficiency 940Nm Diode Chip |Vishay TB9408VA-SF-F |
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TB9408VA-SF-F | Bulk | 1 |
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TB9408VA Datasheets Context Search
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Contextual Info: TB9408VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: multi quantum well MQW • Dimensions chip (L x W x H in mm): 0.2 x 0.2 x 0.19 • Peak wavelength: λ = 940 nm |
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TB9408VA TB9408VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: TB9408VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: multi quantum well MQW • Dimensions chip (L x W x H in mm): 0.2 x 0.2 x 0.19 • Peak wavelength: λ = 940 nm |
Original |
TB9408VA TB9408VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: TB9408VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: multi quantum well MQW • Dimensions chip (L x W x H in mm): 0.2 x 0.2 x 0.19 • Peak wavelength: λ = 940 nm |
Original |
TB9408VA TB9408VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Optoelectronics Bare Die Portfolio Infrared Emitters and Photo Detectors TABLE OF CONTENTS Introduction to Bare |
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VMN-SG2200-1502 |