IR 9530 Search Results

UNITRODE TRANSISTORS

Abstract: UC1704 UC3704
Contextual Info: UNITRODE CORP/UNITRODE IC 'JSD D • W A S IR LI N t AK IN Ih U K A Ih U Ü IK C U IIS Bridge Transducer Switch 0010002 1 UU1/U4 UC3704 , FEATURES • Dual matched current sources • High-gain differential sensing circuit • Wide common-mode input capability

Contextual Info: 'f 'f . r mam IN T E G R A T E D C IR C U IT S UC5603 UNITRODE PRELIMINARY 9-Line SCSI Active Terminator FEATURES DESCRIPTION • The UC5603 provides 9 lines of active termination for a SCSI Small Computers Systems Interface parallel bus. The SCSI standard recom­

28T0157

Abstract: Chip Ferrite Beads For GHz Range Noise Suppressor CM501 b0735 HI1206T161 HR2220V801 HI1206N101 A-0393 transformer eaton el 198 CM3032V301
Contextual Info: 1 ' TECHNICALREFERENCELIBRARY D0N0TREM0VE . rf Ir- i1 L.1 • § « s r— j k\ ISrjï I!k\J1rB1i 1u'9t Mi, * ?<rmk m y & .~ r 'j. 1 fj -f —J _ / ^ “ l* -yM Ferrite Solutions for Printed C ircuit Boards Cables and Connectors Ninth Edition ISO 9001 and QS 9000 Certified

CJ370-47

Abstract: CJ370-7 B9272
Contextual Info: RED INDICATES ORIGINAL DATA a N T A ir a IN THIS DOCUMENT I S PROPRIETARY TD T C H 'LIL U ELECTRONICS INC. AND SHALL NOT BE DISCLOSE, G3PXE0 OR UfflO FOR PRDOJR&efT DR MANUFACTURE M T K U T EXPRESS MITTEN PSMISSXDN. P PASH NO -27 -29 -30 A CABLES DIM ACCOMMODATED

Contextual Info: IN T E G R A T E D C IR C U IT S UC3770A UC3770B U N IT R O D E High Performance Stepper Motor Drive Circuit DESCRIPTION FEATURES Full-Step, Half-Step and Micro-Step Capability. Bipolar Output Current up to 2A. Wide Range of Motor Supply Voltage: 10-50V Low Saturation Voltage

T01A

Contextual Info: CATALOG cn Ld ai UJ C/7 MI CRO SWITCH 1 1 1 ,i{i v w i n i ittgtrti cw itr •«»►Ot* HUM* I f jj ¡ FEO. MFR CODE 9 1 9 2 9 L IS T IN G ^ C IR C U IT MADE WITH BUTTON DEPRESSED Oft 2TP14 SERIES SWITCH-TOGGLE FLUSH KEY CHART 1 CAT. LIST. D_ I— C\l

MOZH

Abstract: 787616-1 AS3E 076JN BM 1313
Contextual Info: í y l Caïù i Air tMlOMTOfUlEG roa kr tc ïtïâ -ir u n iw jp w m it RLSE -1 AND -2 PER NPR 54 34 Od N«V Ifc WAS 95-3099-23 O . 0 2 ± 0 .0 6 |<H0o. i R EV P E R EC 0 0 2 0 - 3 0 4 - 9 6 <£>|o<S | fl)| a 4 Di A R EV P E R EC 0 0 2 0 - 7 3 3 - 3 6 PLC

1rf9530

Abstract: IRF9530 IRF9530 mosfet IRF9531 L 9132 IRF9530* p-channel power MOSFET IRF9532 9133 1RF953 IRFP9131
Contextual Info: SA M S UN G E L E C T R O N I C S INC b4E D IR F 9 5 3 0 /9 5 3 1 Z9 5 3 2 / 9 5 3 3 I R F P 9 1 3 0 /9 1 3 1 /9 1 3 2 /9 1 3 3 j • T T b H l H E D D I S E S M Ö D 1! P-CHANNEL POWER MOSFETS FEATU RES • • • • • • • TO-220 Lower R d s o n

Contextual Info: B 3 RADI A L L 1 GHz TECHNICAL DATA SHEET 1,6/5.6 LATCHING R 5 7 7 953000 TRANSFER Page 1/ 2 SWITCH OPTIONS:/SELF CUT-OFF R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE FREQUENCY GHz V.S.W.R <= : 0 - 1 GHz : 75 Ohms 0 - 0.5 0.5- 1 1.25 1.30 0.15 dB 0.20 dB

Contextual Info: PD- 95304 IRF7421D1PbF FETKYä MOSFET / Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint Lead-Free A A D 1 8 S 2 7 D S 3 6 D G 4 5 D A VDSS = 30V

5M MARKING CODE SCHOTTKY DIODE

Abstract: HEXFET SO-8 marking ky fet MOSFET SO-8 IRF7807D1 EIA-541 807D1
Contextual Info: PD- 95304 IRF7421D1PbF FETKYä MOSFET / Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint Lead-Free Description A A D A 1 8 S 2 7 D S 3 6 D G 4

IC power 22A Regulator

Abstract: IRF7807D1
Contextual Info: PD-95309A IRF7324D1PbF FETKYä MOSFET / Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO-8 Footprint Lead-Free A A S G 1 8 K 2 7 K 3 6 4 5 D VDSS = -20V RDS on = 0.27Ω

807D1

Abstract: jedec package standards so8 2440 so-8
Contextual Info: PD - 95309 IRF7324D1PbF • Lead-Free www.irf.com 1 10/13/04 IRF7324D1PbF 2 www.irf.com IRF7324D1PbF www.irf.com 3 IRF7324D1PbF 4 www.irf.com IRF7324D1PbF www.irf.com 5 IRF7324D1PbF 6 www.irf.com IRF7324D1PbF SO-8 Fetky Package Outline D DIM B 5 A 8 6 7

IRF 930

Abstract: 24V 10A SMPS IRF Power MOSFET code marking AN1001 EIA-541 IRF7101 MS-012AA
Contextual Info: PD- 95307 IRF7453PbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See

AN1001

Abstract: EIA-541 F7101 IRF7101 MS-012AA
Contextual Info: PD- 95306 IRF7450PbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS l l 200V Lead-Free Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See

EIA-541

Abstract: IRF7101 MS-012AA
Contextual Info: PD - 95305 IRF7433PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon

Contextual Info: PD - 95303 IRF7413APbF l l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = 30V

Contextual Info: PD - 95301 IRF7403PbF HEXFET Power MOSFET l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free A A D 1 8 S 2 7 D S 3 6 D 4 5 D S G VDSS = 30V

EIA-541

Abstract: IRF7101 MS-012AA
Contextual Info: PD - 95308 IRF7460PbF SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits

IRF7406

Contextual Info: PD - 95302 IRF7406PbF Generation V Technology l Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l A D 1 8 S 2 7 D S 3 6 D G 4 5 D S

EIA-541

Abstract: IRF7101 IRF7403PBF
Contextual Info: PD - 95301 IRF7403PbF HEXFET Power MOSFET l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = 30V

Contextual Info: PD - 95302 IRF7406PbF Generation V Technology l Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l S S S G A D 1 8 2 7 D 3 6 D 4 5 D

MS-012AA

Contextual Info: PD - 95300 IRF7379PbF HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 VDSS N-Ch P-Ch 30V -30V

1rf730

Abstract: IRF9120 1rf9530 1RF640 1rf830 1RF840 IRF9512 IRF9141 IRF9523 IRF843
Contextual Info: - * sy i± € A Vds or £ * Vd g % V £ Vg s is Id Pd m m (Ta=25"C) less VG S th) I dss Vds= ft i# 14 b(on) Ds(on) g fs Ciss Coss Crss (*typ) (*typ) (*typ) (V) (A) * /CH (nA) m Vg s (V) ( M A) Vd s (V) min ma x (V) (V) (max) Id (mA) (max) (max) (max) (pF)