IR 30 S2 Search Results

CU4R

Abstract: UCVC ccb software
Contextual Info: PMC-Sierra, Inc. ,V VX  W U XP EH 1 FW R HQ 2 RF XP H '    EH U 30 &     8VHU•V 0DQXDO Preliminary 3U RS UL HW DU \ DQ G FR Q R EL W V IL GH QW LD OW   & 6 7 UD II LF LH UU D ,Q F  70 30 $ DQ G IR U HQ W RP HU V· UL VH  YH U HU QD

C2023

Abstract: xnor fairchild semiconductor ic lead side brazed hermetic 2023N TMC2023
Contextual Info: F A IR C H IL D www.fairchildsemi.com Ml C O N D U C T O R T MC 2 0 2 3 CMOS Digital O utput C o rre la to r 6 4 - B i t , 25, 30, 35, a n d 50 M H z Description Features • • • • • The TMC2023 is a monolithic 64-bit correlator with a 7-bit three-state buffered digital output. This device consists of

S20SC4M

Contextual Info: SHINDENGEN Schottky Rectifiers SBD Dual OUTLINE DIMENSIONS S20SC4M Case : MTO-3P Unit : mm 40V 20A FEATURES Tj150 PRRSM avalanche guaranteed Small jc High current capacity APPLICATION Switching power supply DC/DC converter Home Appliances, Office Equipment

S25SC6M

Contextual Info: SHINDENGEN Schottky Rectifiers SBD Dual OUTLINE DIMENSIONS S25SC6M Case : MTO-3P Unit : mm 60V 25A FEATURES Tj150 PRRSM avalanche guaranteed Small jc High current capacity APPLICATION Switching power supply DC/DC converter Home Appliances, Office Equipment

S20SC9M

Contextual Info: SHINDENGEN Schottky Rectifiers SBD S20SC9M Dual OUTLINE DIMENSIONS Case : MTO-3P 90V 20A Unit : mm FEATURES Tj150 PRRSM avalanche guaranteed Small jc High current capacity APPLICATION Switching power supply DC/DC converter Home Appliances, Office Equipment

IRF7319

Abstract: 1606a 1606a mosfet 5.8A, 25V, N Channel MOSFET
Contextual Info: PD - 9.1606A IRF7319 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N E L M O S F E T 1 8 2 7 3 6 4 5 D1 D1 N-Ch P-Ch 30V -30V

IRF7313

Abstract: EIA-541 F7101 IRF7101 MS-012AA MOSFET IRF7313
Contextual Info: PD - 91480B IRF7313 l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 30V RDS on = 0.029Ω Top View Description Fifth Generation HEXFETs from International Rectifier

IRF7343

Abstract: IR*343
Contextual Info: PD -91709 IRF7343 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 N - C H A N N EL M O S FE T 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P -C H A N N E L M O S F E T

marking CODE S2

Contextual Info: 1N6263WS SILICON SCHOTTKY BARRIER DIODE for general purpose applications PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 S2 Top View Marking Code: "S2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Reverse Voltage

IRF7530

Abstract: 2920A 8D12
Contextual Info: PD-93760A IRF7530 HEXFET Power MOSFET ● ● ● ● ● ● Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 20V RDS(on) = 0.030Ω

IRF7324

Contextual Info: PD -93799A IRF7324 HEXFET Power MOSFET ● ● ● ● ● ● Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile <1.1mm Available in Tape & Reel 2.5V Rated S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = -20V D2 D2 RDS(on) = 0.018Ω

photoresistance

Abstract: RPX11 poussoir RPX10 BC207 PCV70 PCV67VS1 caracteristiques cellule photoconductrice pcv67 cds h 50 Klaxon
Contextual Info: SEGOR -OP TOE LE CTR ONI C3 UE SME D . . 1 . Tous les modèles SEGOR sont réalisés dans 4 matériaux principaux : le CDS H 35 S1 , le CDS H 50 * (S2), le CDSE H 35 (E1 ), le CDSE X 5 (E3), dont les caractéristiques particulières fixent les domaines d'application. Par exemple, le S1 et le E1 sont très sensibles aux faibles éclairements :

S289P

Abstract: Telefunken Phototransistor
Contextual Info: S289P Vishay Telefunken Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T–1 ø 3 mm package. The epoxy package itself is an IR filter, spectrally

SIEMENS B84143

Abstract: Siemens matsua B84143-B
Contextual Info: EMC Components Filters for Converters and Power Electronics 500 V, 690 V, 690 V IT-Line Application B84143-B*-S20 . -S24 Data Book Supplement Filters for Converters and Power Electronics B84143-B*-S20 . B84143-B*-S24 Power line filters for three-phase systems

Contextual Info: Schottky Barrier Diode Twin Diode W tm S20SC4M 40V OUTLINE A Feature • Tj=150°C • P r r s m Rating • Small B jc • High lo Rating • T j= 1 5 0 °C • P rR S M 7 A '5 V '> I« § Œ • * i « S i Main Use • • • • • D C /D C Z iy iK — S

bss 97 transistor

Abstract: ss 297 transistor
Contextual Info: SIEMENS BSS 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • '/GS th = 0.8.2.0V Pin 1 Pin 2 G Type BSS 297 ^DS 200 V Type BSS 297 BSS 297 Ordering Code Q67000-S118 Q67000-S292 b 0.48 A ffDS<on) 2Q Pin 3 D Package

irf7301

Abstract: MS-012AA LSE transformer
Contextual Info: PD - 9.1238C IRF7301 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching 1 8 D1 G1 2 7 D1 S2 3 6 4 5 S1 G2 VDSS = 20V D2 RDS on = 0.050Ω

bm-7 reflection

Contextual Info: NANYA ROAD,MUGANG ZHAOQING CITY GUANGDONG CHINA. LEDTECH ELECTRONICS CORP. FAX:86-758-2878014 Http://www.ledtech.com.tw SPECIFICATION PART NO. : LP10B3-S244 LED BACKLIGHT ATTENTION OBSERVE PRECAUTION FOR HANDLING

S21MD10V

Abstract: high power triac
Contextual Info: S21MD10V S21MD10V Built-in Zero-cross Circuit, High Noise Resistance Type Phototriac Coupler • Features ■ Outline Dimensions 1. Built-in zero-cross circuit 2. High critical rate of rise of OFF-state voltage dV/dt:MIN. 1 000V/µs 3. High repetitive peak OFF-state voltage (VDRM:MIN. 600V)

20LC20u

Abstract: s20lc20u
Contextual Info: Super Fast Recovery Diode Twin Diode Wtm S20LC20U OUTLINE 200V 20A Feature • Low Noise • trr=35ns • Small B jc •m s 'ix • trr=35ns Main Use • • • • • ® c « ,0 A • FA Switching Regulator Fly Wheel Home Appliance, Office Automation

Contextual Info: KODENSHI CORP 3SE D S242LDfl 0000345 0 h h?> S G -2 0 6 tiN r - 4 i - ? 3 D IM E N S IO N S Unit: mm [ ] □1*1. The SG-206 photoinferrupter high-performance standard type, combines high-output GaAs IRED with high sensitive phototransistor. o ] r FEATURES

Q1038

Abstract: Q62703-Q1642 S250 GSO06866 Q62703-Q1038 Q62703-Q2067 S260 S260-DO S250-DO
Contextual Info: SOT-23 MULTILED , Diffused LU S250, LV S260, LW S260 Besondere Merkmale eingefärbtes, diffuses Gehäuse extrem weitwinklig als optischer Indikator einsetzbar für alle SMT-Bestück- und Löttechniken geeignet beide Farben getrennt ansteuerbar gegurtet 8-mm-Filmgurt

TLP645G

Abstract: S22MDIV TLP645J EE-CS20 S22MD1V S12MD1V S12ME1 S22MD2 TLP141G
Contextual Info: - 288- TLP645G S22MD2 " h - 50 6 - 400 600 150 150 2 - i >xm Vr m ft -k I h dV max / mA dt min 2 T. min typ* 5 / max n (V/raA) CC) 5 5 1 3.3/10 5* a » 2.5* - 3 0 - 1 0 0 1.35/30 Vr max It (V/m A) 1.3/100 » 1.3/100 1 0.2* 1 " » 2.5* - 5 5 - 1 0 0 5*

S4B-01

Abstract: S4VB20 S5KC20R S1ZAK20 S1ZAK40 S1ZAL20 S1ZB20 S1ZB60 S2HB20Z S2VB20
Contextual Info: - 138- » X m £ [si # & iË * [SI # tt * B S n % Prsm Vr s m kW (V) V H Vr V| (V) (V) Io Tm & (A ) (V ) I fs m I g n t ax Vpmax f o fl o # 11 i B S 1Z A K 2 0 S 1Z A K 4 0 S1ZAL2 0 S1ZAS4 S1ZB20 fr 7 c * t « tc S t® 7 G S1ZB60 S 2H B 2 0 Z S2VB20 S 2V B 6 0