JMSL0609AUQ
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel Power MOSFET in PDFN3x3-8L package with 7.5 mΩ typical RDS(ON) at 10V VGS, low gate charge, and AEC-Q101 qualification for automotive applications. |
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JMSL0609AG
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel Power MOSFET in PDFN5x6-8L package with 7.2 mΩ typical RDS(ON) at 10V VGS, 43A continuous drain current, low gate charge, and 100% UIS tested for power management applications. |
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JMSL0609AKQ
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel Power MOSFET in TO-252-3L package with 7.4 mΩ typical RDS(ON) at 10V VGS, 59A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications. |
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JMSL0609AU
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-channel Power MOSFET in PDFN3x3-8L package with 7.5 mΩ typical RDS(ON) at 10 V VGS, 41 A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications. |
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JMSL0609AGQ
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-channel Power MOSFET in PDFN5x6-8L package with 7.2 mΩ typical RDS(ON) at 10 V VGS, 67 A continuous drain current, and low gate charge for automotive applications. |
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JMSL0609AP
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-Ch Power MOSFET in SOP-8L package with 7.5 mΩ typical RDS(ON) at 10V VGS, 13.6 A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications. |
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JMSL0609AK
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel Power MOSFET in TO-252-3L package with 7.4 mΩ RDS(ON) at 10V VGS, 56A continuous drain current, low gate charge, and 100% UIS tested, suitable for power management and motor driving applications. |
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JMSL0609APD
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel Power MOSFET in SOP-8L package with 7.0 mΩ typical RDS(ON) at 10V VGS, 10A continuous drain current, low gate charge, and designed for power management and switching applications. |
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