IR 2120 Search Results
IR 2120 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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AM27C512-120DE |
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AM27C512 - 512K (64K x 8) CMOS EPROM |
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AM27C512-120DC |
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AM27C512 - 512K (64K x 8) CMOS EPROM |
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AM27C512-120PI-G |
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AM27C512 - 512Kb (64K x 8-Bit) CMOS OTP EPROM |
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50642-1200ELF |
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High Pin Count, Backplane Connectors, Receptacle, Right Angle, 4 Row, 0 Guide Pin, Solder-less Press-Fit, 200 Positions, 2.54mm (0.100in) Pitch | |||
20021212-000A0T4LF |
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Minitek127®, Board/Wire to Board connector, Shrouded Right Angled Header, Through Hole, Double Row, 100 Positions, 1.27 mm (.050in) Pitch. |
IR 2120 Price and Stock
Omega Engineering CIR-2120-240VCIR-2120/240V |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CIR-2120-240V | Bulk | 1 |
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Omega Engineering CIR-2120-120VCIR-2120/120V |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CIR-2120-120V | Bulk | 1 |
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Altech Corporation PIR2-120AC-00LVRELAY GEN PURPOSE DPDT 12A 120V |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PIR2-120AC-00LV | Bulk | 20 |
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PIR2-120AC-00LV |
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PIR2-120AC-00LV | 42 | 20 |
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PIR2-120AC-00LV |
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Omega Engineering CIR-2120/120VHIGH WATT DENSITY CARTRIDGE HEATERS WITH INCOLOY SHEATH 3/8 (9.525 MM) NOMINAL DIAMETER - Bulk (Alt: CIR-2120/120V) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CIR-2120/120V | Bulk | 5 Weeks | 1 |
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CIR-2120/120V | Bulk | 1 |
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Omega Engineering CIR-2120/240VHIGH WATT DENSITY CARTRIDGE HEATERS WITH INCOLOY SHEATH 3/8 (9.525 MM) NOMINAL DIAMETER - Bulk (Alt: CIR-2120/240V) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CIR-2120/240V | Bulk | 6 Weeks | 1 |
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CIR-2120/240V | Bulk | 1 |
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IR 2120 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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MBR840Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: MBR840 Single Anode General Description: 40 V 8 A Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current |
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MBR840 14mil) MBR840 | |
MBR8100Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: MBR8100 Single Anode General Description: 100 V 8 A Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current |
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MBR8100 14mil) MBR8100 | |
MBR860Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: MBR860 Single Anode General Description: 60 V 8 A Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current |
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MBR860 14mil) MBR860 | |
SMBR840Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SMBR840 Single Anode General Description: 40 V 8 A Super Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current |
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SMBR840 IFS84 14mil) SMBR840 | |
SMBR8100Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SMBR8100 Single Anode General Description: 100 V 8 A Super Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current |
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SMBR8100 14mil) SMBR8100 | |
SMBR860Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SMBR860 Single Anode General Description: 60 V 8 A Super Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current |
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SMBR860 14mil) SMBR860 | |
SB860Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SB860 Single Anode General Description: 60 V 8 A Standard VF ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA for wafer form Ir=0.5mA (for dice form) Average Rectified Forward Current |
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SB860 14mil) SB860 | |
SB840Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SB840 Single Anode General Description: 40 V 8 A Standard VF ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA for wafer form Ir=0.5mA (for dice form) Average Rectified Forward Current |
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SB840 14mil) SB840 | |
SB820Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SB820 Single Anode General Description: 20 V 8 A Standard VF ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA for wafer form Ir=0.5mA (for dice form) Average Rectified Forward Current |
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SB820 14mil) SB820 | |
SB8100Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SB8100 Single Anode General Description: 100 V 8 A Standard VF ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA for wafer form Ir=0.5mA (for dice form) Average Rectified Forward Current |
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SB8100 14mil) SB8100 | |
MTL ICC 311
Abstract: HDSP-5621 HDSP-5623 LN526RGA SL-2199 SL-2225 hp 5082-7756
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HDSP-5621 HDSP-5623 LN526RGA P2X14-2BÂ MD0657M-R) MD2057C-R) MD2057C-RG) SL-Q225 MTL ICC 311 SL-2199 SL-2225 hp 5082-7756 | |
Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
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25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76 | |
ZTP-135SR
Abstract: ZTP-135S ZTP-115 ZTP-315 ZTP-115M ZTP 135 ZTP-135 ir thermo sensor ZTP-101T ZTP-101
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ZTP-101L ZTP-101 ZTP-25A ZTP-135SR ZTP-135S ZTP-115 ZTP-315 ZTP-115M ZTP 135 ZTP-135 ir thermo sensor ZTP-101T | |
Contextual Info: PHOTOMULTIPLIER TUBE R2257 For Visible to Near IR Low Light Detections Extended Red Multialkali Photocathode 51mm 2 Inch Diameter, 12-stage, Head-on Type GENERAL Parameter Spectral Response Wavelength of Maximum Response MateriaI Photocathode Minimum Effective Area |
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R2257 12-stage, 21-pin E678-21C SE-171-41 TPMH1141E03 | |
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motorola transistor 7439
Abstract: 741TC TRANSISTOR REPLACEMENT GUIDE sprague transistors MC1304 SN75474 ULN2151D MC1310P 3067 dual transistor motorola transistor array 14 pin dip
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ULS-2045H ULN-2046A ULN-2047A ULN-2054A ULN-2081A MC1439G MC1439P1 MC1741CG MC1741CP1 MC3003 motorola transistor 7439 741TC TRANSISTOR REPLACEMENT GUIDE sprague transistors MC1304 SN75474 ULN2151D MC1310P 3067 dual transistor motorola transistor array 14 pin dip | |
IR2120
Abstract: IR3120 G33 REGULATOR P36202028 IR1010 IR-2120 IR3010 P36203018 KT-IR3000 ir3020
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IR1000/2000/3000 IR100 IR200 IR300 IR2120 IR3120 IR2000: IR1000-01 IR3000-0 IR2120 IR3120 G33 REGULATOR P36202028 IR1010 IR-2120 IR3010 P36203018 KT-IR3000 ir3020 | |
Contextual Info: MCC 1.5 Amp Glass Passivated Junction Rectifiers 50 to 1000 Volts Features • • • High temperature metallurgically bonded construction Glass passivated cavity-free junction, Plastic Case 1.5 amperes operation at TA=55OC and with no thermal runaway. Typical IR less than 0.1uA |
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GP15A GP15M DO-15 -55OC 20OC/W GP15B GP15D GP15G GP15J | |
Contextual Info: 46133 15 HU GHE S AIRCRAFT CO/ SANTA 38C 00448 HUGHES AIRCRAFT CO/ SANTA 3fl DE | 4bl3315 DD0Q44fl ^ h */7 | ^ Detectors Doped Germanium and Doped Silicon IR Detectors for Low Background Operation The infrared detection capability of doped germanium and doped silicon detectors |
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4bl3315 DD0Q44fl 50-ohm | |
MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
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108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117 | |
S-95-658/NEMA
Abstract: icea S-95-658
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INS-0131-R1014 S-95-658/NEMA icea S-95-658 | |
TS7024Contextual Info: 10 BASE-T COUPLING TRANSFORMER P/N: TS7024 DATA SHEET A.GENERAL SPECIFICATIONS: 1. 16PNS,XMD PACKAGE TO COMPLIANT WTTH IEEE802.3 STABDARD. 2. MODEL IS AVAILABLE TO INTERF ACE WITH 10 BASE-T TRANSCEIVERS. 3. COMPATIBLE WITH IR OVEN PROCESSES. 4. STORAGE TEMP RANGE: -25°C TO +125°C |
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TS7024 16PNS IEEE802 50/200uH 200mV/100KHz. 1-10MHz. 1500Vrms April7024 | |
16PIN
Abstract: TS7012 6HIP
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TS7012 16PIN 175uH 100KHz/0 6HIP | |
Contextual Info: Ä I D W M C S Ö M F @ [^ M Ä ?D [K 1 ir tU October 1989 3 80960CA Product Overview 32-Bit High-Performance Embedded Processor with On-Chip DMA Controller, Interrupt Controller, High-Speed Bus Unit, Instruction and Register Caches Order Number: 270669-001 |
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80960CA 32-Bit 80960CA 80960CAâ 00000000H 000003FFH. | |
Contextual Info: GMF05C-HS3 Vishay Semiconductors 5-Line ESD Protection Diode Array in LLP75-6A Features • Ultra compact LLP75-6A package • 5-line ESD-protection • Surge immunity acc. IEC 61000-4-5 IPPM > 12 A • Low leakage current IR < 1 µA • ESD-immunity acc. IEC 61000-4-2 |
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GMF05C-HS3 LLP75-6A LLP75-6A 2002/95/EC 2002/96/EC GMF05C-HS3 GMF05C-HS3-GS08 2011/65/EU 2002/95/EC. |