IR 2120 Search Results
IR 2120 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| AM27C512-120DE | Rochester Electronics LLC | AM27C512 - 512K (64K x 8) CMOS EPROM |
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| AM27C512-120DC | Rochester Electronics LLC | AM27C512 - 512K (64K x 8) CMOS EPROM |
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| 10132798-032120LF | Amphenol Communications Solutions | BergStak® 0.5mm Mezzanine Connector, Board To Board Connectors, 30 position, 2.7mm height receptacle connector. | |||
| 10132798-042120LF | Amphenol Communications Solutions | BergStak® 0.5mm Mezzanine Connector, Board To Board Connectors, 40 position, 2.7mm height receptacle connector. | |||
| 71922-120LF | Amphenol Communications Solutions | Quickie® Eject Latch connector, 2.54mm(0.100in), Shrouded Header, Through Hole, Right Angle, Double Row, 20 Positions |
IR 2120 Price and Stock
RELPOL PIR2-120AC-00LVRelay: interface; Ucoil: 120VAC; DPDT; 12A; 12A/250VAC; 12A/24VDC |
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PIR2-120AC-00LV | 1 |
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Omega Engineering CIR-2120/240VHIGH WATT DENSITY CARTRIDGE HEATERS WITH INCOLOY SHEATH 3/8 (9.525 MM) NOMINAL DIAMETER - Bulk (Alt: CIR-2120/240V) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CIR-2120/240V | Bulk | 6 Weeks | 1 |
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CIR-2120/240V | Bulk | 1 |
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Omega Engineering CIR-2120/120VHIGH WATT DENSITY CARTRIDGE HEATERS WITH INCOLOY SHEATH 3/8 (9.525 MM) NOMINAL DIAMETER - Bulk (Alt: CIR-2120/120V) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CIR-2120/120V | Bulk | 5 Weeks | 1 |
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CIR-2120/120V | Bulk | 1 |
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Altech Corporation PIR2-120AC-00LVIndustrial Relays Relay socket combo; R2 |
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PIR2-120AC-00LV |
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PIR2-120AC-00LV | Bulk | 9 Weeks | 20 |
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PIR2-120AC-00LV | 41 | 20 |
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PIR2-120AC-00LV |
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PIR2-120AC-00LV | 50 |
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APEM Inc IRR3V212000Pushbutton Switches - Board Mount PUSHBUTTON SWITCH FD DBLE ICON |
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IRR3V212000 |
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IR 2120 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MBR840Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: MBR840 Single Anode General Description: 40 V 8 A Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current |
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mbr84014mil | |
MBR8100Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: MBR8100 Single Anode General Description: 100 V 8 A Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current |
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mbr810014mil | |
MBR860Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: MBR860 Single Anode General Description: 60 V 8 A Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current |
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mbr86014mil | |
SMBR840Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SMBR840 Single Anode General Description: 40 V 8 A Super Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current |
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smbr840ifs8414mil | |
SMBR8100Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SMBR8100 Single Anode General Description: 100 V 8 A Super Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current |
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smbr810014mil | |
SMBR860Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SMBR860 Single Anode General Description: 60 V 8 A Super Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current |
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smbr86014mil | |
SB860Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SB860 Single Anode General Description: 60 V 8 A Standard VF ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA for wafer form Ir=0.5mA (for dice form) Average Rectified Forward Current |
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sb86014mil | |
SB840Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SB840 Single Anode General Description: 40 V 8 A Standard VF ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA for wafer form Ir=0.5mA (for dice form) Average Rectified Forward Current |
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sb84014mil | |
SB820Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SB820 Single Anode General Description: 20 V 8 A Standard VF ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA for wafer form Ir=0.5mA (for dice form) Average Rectified Forward Current |
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sb82014mil | |
SB8100Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SB8100 Single Anode General Description: 100 V 8 A Standard VF ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA for wafer form Ir=0.5mA (for dice form) Average Rectified Forward Current |
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sb810014mil | |
MTL ICC 311
Abstract: HDSP-5621 HDSP-5623 LN526RGA SL-2199 SL-2225 hp 5082-7756
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OCR Scan |
hdsp-5621hdsp-5623ln526rgap2x14-2b+8 | |
Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
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OCR Scan |
25t12z1012z1014z1018+16 | |
ZTP-135SR
Abstract: ZTP-135S ZTP-115 ZTP-315 ZTP-115M ZTP 135 ZTP-135 ir thermo sensor ZTP-101T ZTP-101
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ztp-101lztp-101ztp-25aztp-135sr+8 | |
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Contextual Info: PHOTOMULTIPLIER TUBE R2257 For Visible to Near IR Low Light Detections Extended Red Multialkali Photocathode 51mm 2 Inch Diameter, 12-stage, Head-on Type GENERAL Parameter Spectral Response Wavelength of Maximum Response MateriaI Photocathode Minimum Effective Area |
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r225712-stage21-pine678-21c+2 | |
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motorola transistor 7439
Abstract: 741TC TRANSISTOR REPLACEMENT GUIDE sprague transistors MC1304 SN75474 ULN2151D MC1310P 3067 dual transistor motorola transistor array 14 pin dip
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OCR Scan |
uls-2045huln-2046auln-2047auln-2054a+16 | |
IR2120
Abstract: IR3120 G33 REGULATOR P36202028 IR1010 IR-2120 IR3010 P36203018 KT-IR3000 ir3020
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ir1000/2000/3000ir100ir200ir300+13 | |
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Contextual Info: MCC 1.5 Amp Glass Passivated Junction Rectifiers 50 to 1000 Volts Features • • • High temperature metallurgically bonded construction Glass passivated cavity-free junction, Plastic Case 1.5 amperes operation at TA=55OC and with no thermal runaway. Typical IR less than 0.1uA |
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gp15agp15mdo-15-55oc+5 | |
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Contextual Info: 46133 15 HU GHE S AIRCRAFT CO/ SANTA 38C 00448 HUGHES AIRCRAFT CO/ SANTA 3fl DE | 4bl3315 DD0Q44fl ^ h */7 | ^ Detectors Doped Germanium and Doped Silicon IR Detectors for Low Background Operation The infrared detection capability of doped germanium and doped silicon detectors |
OCR Scan |
4bl3315dd0q44fl50-ohm | |
MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
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OCR Scan |
108thmt11152n3303fpt100 phototransistor+7 | |
S-95-658/NEMA
Abstract: icea S-95-658
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ins-0131-r1014s-95-658/nemaicea s-95-658 | |
TS7024Contextual Info: 10 BASE-T COUPLING TRANSFORMER P/N: TS7024 DATA SHEET A.GENERAL SPECIFICATIONS: 1. 16PNS,XMD PACKAGE TO COMPLIANT WTTH IEEE802.3 STABDARD. 2. MODEL IS AVAILABLE TO INTERF ACE WITH 10 BASE-T TRANSCEIVERS. 3. COMPATIBLE WITH IR OVEN PROCESSES. 4. STORAGE TEMP RANGE: -25°C TO +125°C |
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ts702416pnsieee80250/200uh+4 | |
16PIN
Abstract: TS7012 6HIP
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ts701216pin175uh100khz/0+1 | |
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Contextual Info: Ä I D W M C S Ö M F @ [^ M Ä ?D [K 1 ir tU October 1989 3 80960CA Product Overview 32-Bit High-Performance Embedded Processor with On-Chip DMA Controller, Interrupt Controller, High-Speed Bus Unit, Instruction and Register Caches Order Number: 270669-001 |
OCR Scan |
80960ca32-bit00000000h000003ffh | |
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Contextual Info: GMF05C-HS3 Vishay Semiconductors 5-Line ESD Protection Diode Array in LLP75-6A Features • Ultra compact LLP75-6A package • 5-line ESD-protection • Surge immunity acc. IEC 61000-4-5 IPPM > 12 A • Low leakage current IR < 1 µA • ESD-immunity acc. IEC 61000-4-2 |
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gmf05c-hs3llp75-6a2002/95/ec2002/96/ec+2 | |