MIP4110
Abstract: mip411 MIP414 MIP2E3D mip41 MIP4150MD MIP4140MS mip418 MIP4110MS MIP4120
Contextual Info: Low noise from electric components and energy-saving at standby mode IPD Series for Quasi-resonant Power Supply MIP41X Series Overview This IPD (Intelligent Power Device) has been developed for switching power supplies, which adopts RCC quasi-resonant control
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mip2f2
Abstract: power supply LED 3w mip2f2 MIP2F2 IC mip2f mip2fx IC301 MIP2C2 MIP2C2 MIP2F2 power supply mip2f2 MIP022X
Contextual Info: IPD Product Selection Guide October 1, 2008 Semiconductor Company, Panasonic Corporation Precautions on the Sales of IPDs 1 The sale and/or the export of IPD products to any customer or customers located in any country other than Japan is expressly prohibited by the Agreement made and executed by and between Power Integrations, Inc. and Panasonic Corporation.
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mip2f2power supply led 3w mip2f2mip2f2 icmip2f+6mip2fxic301mip2c2mip2c2 mip2f2power supply mip2f2mip022x
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mip2f2
Abstract: MIP2F2 IC IC301 mip2f MIP2C2 MIP2F2 MIP2C2 MIP41X MIP022X mip025 2200p
Contextual Info: IPD製品選択ガイド 2008年2月28日 Copyright C 2005 Matsushita Electric Industrial Co., Ltd. All rights reserved. 製品選択フローチャート Start 下の表に必要事項を書き込み右のＳｔａｒｔからフ ローチャートに沿って、製品を選択してください。
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mip022x200mw44130khz100khz+1244khz130khz44khz130khz2mip2f2mip2f2 icic301mip2fmip2c2 mip2f2mip2c2mip41xmip0252200p
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MIP417MD
Abstract: MIP4170MD mip417m Secondary Regulator for VTR
Contextual Info: Intelligent Power Devices IPDs MIP4170MD Silicon MOS FET type integrated circuit • Features Package Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.
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mip4170mdo-220ipd7-a2mip417mdartificp01+8mip00mip55mip816/826mip50mip02mip52mip417msecondary regulator for vtr
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MIP417MD
Abstract: mip41 MIP4170MD MIP417 TO-220IPD7-A2 mip9l MIP55 SLB00097AED
Contextual Info: Intelligent Power Devices IPDs MIP4170MD Silicon MOS FET type integrated circuit • Features Package Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.
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MIP414MD
Abstract: MIP414 MIP4140MD mip41 mip4140 MIP9E mip9l TO-220IPD7-A2 MIP803 MIP55
Contextual Info: Intelligent Power Devices IPDs MIP4140MD Silicon MOS FET type integrated circuit • Features Package Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.
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MIP414MD
Abstract: MIP4140MD MIP41
Contextual Info: Intelligent Power Devices IPDs MIP4140MD Silicon MOS FET type integrated circuit • Features Package Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.
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MIP414
Abstract: MIP414MD
Contextual Info: Intelligent Power Devices IPDs MIP4140MD Silicon MOS FET type integrated circuit • Features Package Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.
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MIP417MD
Abstract: TO-220IPD7-A2 mip41 MIP16
Contextual Info: Intelligent Power Devices IPDs MIP4170MD Silicon MOS FET type integrated circuit • Features Package Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.
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MIP417MD
Abstract: MIP417 mip417m
Contextual Info: Intelligent Power Devices IPDs MIP4170MD Silicon MOS FET type integrated circuit • Features Package Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.
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MIP414MD
Abstract: MIP414 MIP4140md
Contextual Info: Intelligent Power Devices IPDs MIP4140MD Silicon MOS FET type integrated circuit • Features Package Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.
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MIP9E01
Abstract: MIP9E02 MIP709 ipd mip2 ipd mip4
Contextual Info: Intelligent Power Devices IPDs MIP704 Silicon MOS IC • Features ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated ● Acceptable both AC and DC power supply
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MIP9E01
Abstract: MIP9E02 MIP9E ipd mip2 ipd mip4
Contextual Info: Intelligent Power Devices IPDs MIP504 Silicon MOS IC • Features unit: mm ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated ● Acceptable both AC and DC power supply
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MIP9E
Abstract: MIP2
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Intelligent Power Devices (IPDs) MIP504 Silicon MOS IC • Features unit: mm ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated
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mosfet MIP2L4MY
Abstract: MIP2L40MY MIP2L4My MIP2L
Contextual Info: MIP2L40MY Silicon MOS FET type integrated circuit • Features Package Reducing the average noise Adding a frequency jitter function to MIP2E/3E* series to dramatically reduce the average noise and simplify EMI parts Stabilization of maximum electric power by input correction
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MIP165
Abstract: MIP164 MIP163 IPD Industrial Products MIP9E01 MIP2
Contextual Info: Intelligent Power Devices IPDs MIP160, MIP162, MIP163, MIP164, MIP165, MIP166 Silicon MOS IC • Features unit: mm ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V)
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mip2l3
Abstract: mip2e 1/mip2l3 MIP2L30MS
Contextual Info: MIP2L30MS Silicon MOS FET type integrated circuit • Features Package Reducing the average noise Adding a frequency jitter function to MIP2E/3E* series to dramatically reduce the average noise and simplify EMI parts Stabilization of maximum electric power by input correction
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MIP9E01
Abstract: MIP9E02 MIP805 MIP709
Contextual Info: Intelligent Power Devices IPDs MIP705 Silicon MOS IC Unit: mm • Applications • For automotive electric equipment (relay or solenoid driver) 0.5±0.1 0.8 max. 1.8±0.1 2.5±0.1 7.3±0.1 • 3-pin intelligent power device • Five protective functions (over-current, over-voltage, load-shorting, over heat, ESD) built-in
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MIP9E01
Abstract: MIP0122SY MIP9E02 TO-220-A1 MIP0123SY MIP0125SY MIP816 MIP0123 matsua CHARGER ipd mip2
Contextual Info: Intelligent Power Devices IPDs MIP0122SY, MIP0123SY, MIP0124SY, MIP0125SY Silicon MOS IC • Features unit: mm ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated.
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MIP554
Abstract: ICL300 MIP5540MS icl 555
Contextual Info: MIP5540MS Silicon MOS FET type integrated circuit • Features Package It corresponds to the output for 10 W. Typical LED peak current : 1.0 A On resistance can be decreased to 3.7 Ω by adjusting the breakdown voltage to 400 V. The stability operation that suppresses the flicker in the triac light dimmer is possible.
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mip0210
Abstract: MIP0210SY MIP9E MIP2 mip021
Contextual Info: Intelligent Power Devices IPDs MIP0210SY Silicon MOS IC • Features unit: mm ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V) ● A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated.
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mip0210
Abstract: MIP9E01 mip2 japan MIP2 MIP0210SP
Contextual Info: Intelligent Power Devices IPDs MIP0210SP Silicon MOS IC • Features unit: mm ■ Applications 7 3 6 4 5 ● Switching power supply (to 7W) ● AC adaptor ● Battery charger 6.3±0.2 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo
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MIP9E01
Abstract: MIP9E02
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Intelligent Power Devices (IPDs) MIP705 Silicon MOS IC Unit: mm • Applications • For automotive electric equipment (relay or solenoid driver) 0.5±0.1 0.8 max. 1.8±0.1 2.5±0.1 7.3±0.1 • 3-pin intelligent power device
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MIP9E01
Abstract: MIP9E02 MIP816 ipd mip2 ipd mip4
Contextual Info: MIP153 Intelligent Power Devices IPDs MIP153 Silicon MOS IC • Features 10.5±0.5 ● 9.5±0.2 Unit : mm 4.5±0.2 2.8±0.2 1.5 Worldwide input (85 to 274VAC) possible ● Over-voltage protection at secondary section, pulse by pulse over- 6.7±0.3 ● 15.4±0.3
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