IPB057N Search Results
IPB057N Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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IPB057N06N |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 17A TO263-3 | Original | 9 | |||
IPB057N06NATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 17A TO263-3 | Original | 552.92KB |
IPB057N Price and Stock
Infineon Technologies AG IPB057N15NM6ATMA1TRENCH >=100V |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB057N15NM6ATMA1 | Digi-Reel | 940 | 1 |
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IPB057N15NM6ATMA1 | Reel | 12 Weeks | 1,000 |
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IPB057N15NM6ATMA1 | 222 |
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IPB057N15NM6ATMA1 | 950 | 7 |
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IPB057N15NM6ATMA1 | Cut Strips | 950 | 12 Weeks | 1 |
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IPB057N15NM6ATMA1 | Cut Tape | 970 | 1 |
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IPB057N15NM6ATMA1 | 13 Weeks | 1,000 |
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Infineon Technologies AG IPB057N06NATMA1MOSFET N-CH 60V 17A/45A D2PAK |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB057N06NATMA1 | Digi-Reel | 356 | 1 |
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IPB057N06NATMA1 | Reel | 18 Weeks | 1,000 |
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IPB057N06NATMA1 | 1,116 |
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IPB057N06NATMA1 | 9,000 | 1,000 |
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IPB057N06NATMA1 | 1,000 | 18 Weeks | 1,000 |
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IPB057N06NATMA1 | Cut Tape | 1,650 | 1 |
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IPB057N06NATMA1 | 4,792 | 1 |
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IPB057N06NATMA1 | 1 |
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IPB057N06NATMA1 | Cut Tape | 5,739 | 0 Weeks, 1 Days | 1 |
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IPB057N06NATMA1 | 1,000 | 19 Weeks | 1,000 |
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IPB057N06NATMA1 | 1,000 | 1 |
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Infineon Technologies AG IPB057N06NMOSFETs N-Ch 60V 45A D2PAK-2 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB057N06N | 810 |
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IPB057N Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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057N06NContextual Info: Type IPB057N06N OptiMOSTM Power-Transistor Product Summary Features VDS 60 V RDS on ,max 5.7 mW • Superior thermal resistance ID 45 A • N-channel, normal level Qoss 32 nC • Qualified according to JEDEC1) for target applications Qg(0V.10V) 27 nC • Optimized for synchronous rectification |
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IPB057N06N IEC61249-2-21 PG-TO263-3 057N06N 10dangerous 057N06N | |
IPB057N06N
Abstract: ipb057n
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IPB057N06N IEC61249-2-21 PG-TO263-3 057N06N 50K/W IPB057N06N ipb057n | |
Contextual Info: Type IPB057N06N OptiMOSTM Power-Transistor Product Summary Features VDS 60 V RDS on ,max 5.7 mW • Superior thermal resistance ID 45 A • N-channel, normal level Qoss 32 nC • Qualified according to JEDEC1) for target applications Qg(0V.10V) 27 nC • Optimized for synchronous rectification |
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IPB057N06N IEC61249-2-21 PG-TO263-3 057N06N | |
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Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
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TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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