IOR MOSFET Search Results

f7101

Abstract: MOSFET IRF7101 f-7101 MS-012AA
Contextual Info: SO-8 MS-012AA EXAMPLE: THIS IS AN IRF7101 (MOSFET) ñ ñ YWW ññ INTERNATIONAL RECTIFIER LOGO IOR xxxx O F7101 yyyy DATE CODE (YWW) Y = LAST DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER

IRF3205 equivalent

Contextual Info: PD - 9.1374A International IOR Rectifier IRFI3205 PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated

irfp3710

Abstract: RFPE30
Contextual Info: PD - 9.1490A International IOR Rectifier IRFP3710 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = "100V ^ D S o n = 0.025Î2

IRLZ44N equivalent

Abstract: MARKING CODE 2B5
Contextual Info: PD -9.1498 International IOR Rectifier IRLIZ44N PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated

IRL3705N

Contextual Info: P D - 9.1502 International IOR Rectifier IRL3705NS PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Surface Mount • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

Contextual Info: I , .• I International PD 9.1402 PRELIMINARY IOR Rectifier IRFR/U5305 HEXFET Power MOSFET • • • • • • Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated

5S45S

Contextual Info: Provisional Data Sheet No. PD 9.1295A International IOR Rectifier IRFY9240CM HEXFET POWER MOSFET P-CHANNEL -200Volt, 0.51Î2 HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors.The effi­

Contextual Info: PD - 9.1329A International IOR Rectifier IRLIZ34N PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated

Contextual Info: 4655452 DQmSflM Q4R • INR PD-9.455D International ioR R ectifier _ IRC830 INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements

smd diode GW

Abstract: diode ESM 315 K451
Contextual Info: PD - 9.1647 International IOR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • N-Channel HEXFET • Low Vp Schottky Rectifier • Generation V T echnology • Micro8 Footprint VDSS =

S4BV

Abstract: irl3103s
Contextual Info: PD -9.1338D International IOR Rectifier IRL3103S PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated VDSS = 30V

Contextual Info: PD-9.1005 International ioR R ectifier IRF634S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description

Contextual Info: « PD - 9.1378A International IOR Rectifier IRLI2203N PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated

Contextual Info: PD - 9.1326B International IOR Rectifier IRL2505S PRELIM IN ARY HEXFET Power MOSFET • • • • • • • • Logic-Level Gate Drive Advanced Process Technology Surface Mount Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature

U5305

Abstract: ior 481 mosfet 476 16q
Contextual Info: I , ,• I International IOR Rectifier PRELIMINARY PD 9.1402 IRFR/U5305 HEXFET Power MOSFET • • • • • • Vdss = "55 V Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated

Contextual Info: PD - 9.1360 International Rectifier IOR IRL2703S PRELIM INARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss RüS on

F1G21

Abstract: IRF7317
Contextual Info: International IOR Rectifier P D -9.1568 IRF7317 PRELIMINARY HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 9.1348A International IOR Rectifier IRL530N PRELIMINARY HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss f^DS on

Contextual Info: PD -9.1276B International IOR Rectifier IRFZ34N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling V dss = 55V RDS on = 0.040Q

Contextual Info: PD - 9.904B International IOR Rectifier IR L Z 2 4 S /L HEXFET Power MOSFET • • • • • Advanced Process Technology Surface Mount IRLZ24S Low-profile through-hole (IRLZ24L) 175°C Operating Temperature Fast Switching Description Third Generation HEXFETs from International Rectifier

1RFZ34

Abstract: STM TO-220 marking IRFZ34 IRFZ34 international
Contextual Info: International ioR Rectifier HEXFET Power MOSFET • • • • • 4Û5S452 0Q1577Ö STM « I N R PD-9.509B IRFZ34 bSE D INTERNATIONAL RECTIFIER Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: PD9.1691C In terna tional IOR Rectifier IRL3102S PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount • Optimized for 4.5V-7.0V Gate Drive • Ideal for CPU Core DC-DC Converters • Fast Switching V dss = 20 V ^D S o n =

irl540n

Contextual Info: International IOR Rectifier P D - 9.1495 IRL540N PRELIMINARY HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated

Contextual Info: ft II P D - 9.1629 International IOR Rectifier IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve