IOR MOSFET Search Results

IRL2203N equivalent

Abstract: C564 c562
Contextual Info: PD - 9.1378B International IOR Rectifier IRLI2203N HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS ® Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated

Contextual Info: PD-9.1069 International ioR R ectifier IRF840LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated

pal 011

Abstract: Ultra High Voltage Hexfets Pal011 mosfet ir 250 n ne 555 diode
Contextual Info: PD-9.1070 International ioR Rectifier IRFBC40LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated

f7101

Abstract: MOSFET IRF7101 f-7101 MS-012AA
Contextual Info: SO-8 MS-012AA EXAMPLE: THIS IS AN IRF7101 (MOSFET) ñ ñ YWW ññ INTERNATIONAL RECTIFIER LOGO IOR xxxx O F7101 yyyy DATE CODE (YWW) Y = LAST DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER

irf5305

Abstract: .C36 marking
Contextual Info: International IOR Rectifier PD 9.1385A PRELIMINARY IRF5305 HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175PC Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Voss = -55V RDS on = 0.060

IRF3205 equivalent

Contextual Info: PD - 9.1374A International IOR Rectifier IRFI3205 PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated

irfp3710

Abstract: RFPE30
Contextual Info: PD - 9.1490A International IOR Rectifier IRFP3710 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = "100V ^ D S o n = 0.025Î2

IRLZ44N equivalent

Abstract: MARKING CODE 2B5
Contextual Info: PD -9.1498 International IOR Rectifier IRLIZ44N PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated

IRL3705N

Contextual Info: P D - 9.1502 International IOR Rectifier IRL3705NS PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Surface Mount • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

1RFP150

Abstract: 441D IRFP150
Contextual Info: International ior Rectifier PD-9.441D IRFP150 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

SMD MARKING XL

Contextual Info: PD - 9.1380A International IOR Rectifier IRLL2705 HEXFET Power MOSFET • • • • • • • Surface Mount Dynamic dv/dt Rating Logic-Level Gate Drive Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance V dss = 55V

C536

Abstract: DIODE C536 IOR 536 C535 C538 C537 F C535 B C537 DIODE
Contextual Info: PD - 9.1323B International IOR Rectifier IRL3303S/L HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL3303S Low-profile through-hole (IRL3303L) 175°C OperatingTemperature Fast Switching

Contextual Info: I , .• I International PD 9.1402 PRELIMINARY IOR Rectifier IRFR/U5305 HEXFET Power MOSFET • • • • • • Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated

5S45S

Contextual Info: Provisional Data Sheet No. PD 9.1295A International IOR Rectifier IRFY9240CM HEXFET POWER MOSFET P-CHANNEL -200Volt, 0.51Î2 HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors.The effi­

Contextual Info: 4655452 DQmSflM Q4R • INR PD-9.455D International ioR R ectifier _ IRC830 INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements

smd diode GW

Abstract: diode ESM 315 K451
Contextual Info: PD - 9.1647 International IOR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • N-Channel HEXFET • Low Vp Schottky Rectifier • Generation V T echnology • Micro8 Footprint VDSS =

1RF540

Abstract: IRF540S 1RF540S smd diode 2ba smd diode JD 103S AN-994 SMD-220 smd marking JD marking AI
Contextual Info: PD-9.898 International ioR Rectifier IRF540S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Description

S4BV

Abstract: irl3103s
Contextual Info: PD -9.1338D International IOR Rectifier IRL3103S PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated VDSS = 30V

Contextual Info: PD-9.1005 International ioR R ectifier IRF634S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description

Contextual Info: « PD - 9.1378A International IOR Rectifier IRLI2203N PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated

Contextual Info: PD - 9.1326B International IOR Rectifier IRL2505S PRELIM IN ARY HEXFET Power MOSFET • • • • • • • • Logic-Level Gate Drive Advanced Process Technology Surface Mount Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature

SD 57A

Abstract: ior 446h fa57sa50lc max5736 SD57a ir 446h
Contextual Info: PD-9.1650 International IOR Rectifier FA57SA50LC HEXFET Power MOSFET • Fully Isolated Package • Easy to Use and Parallel • Low On-Resistance • Dynamic dv/dt Rating • Fully Avalanche Rated • Simple Drive Requirements • Low Gate Charge Device

U5305

Abstract: ior 481 mosfet 476 16q
Contextual Info: I , ,• I International IOR Rectifier PRELIMINARY PD 9.1402 IRFR/U5305 HEXFET Power MOSFET • • • • • • Vdss = "55 V Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated

Contextual Info: PD - 9.1360 International Rectifier IOR IRL2703S PRELIM INARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss RüS on