INTERNATIONAL POWER DEVICES Search Results

tg0-j

Abstract: 60SQ100 50SQ100 sq0455 IR 50SQ100
Contextual Info: _ _ l< INTERNATIONAL RECTIFIER 4855452 SS INTERNATIONAL DE | l»ô 5S4S2 ODDSOSl S 55C R EC TIFIER 05051 Data Sheet No. PD-2.060A V - o 3 - / 7 I“R INTERNATIONAL RECTIFIER 50SQ SERIES 5 Amp Schottky Power Rectifiers

55C05

Abstract: 50HQ020
Contextual Info: INTERNATIONAL RECTIFIER 4855452 "55 4 355455 0005103 55C 05 103 INTERNATIONAL RECTIFIER D Data Sheet No. PD-2.032D INTERNATIONAL RECTIFIER X O R 50HQ, 1N6097 & 38 SERIES 50 and 60 Amp Schottky Power Rectifiers Major Ratings and Characteristics Characteristic

C528 transistors

Abstract: C528 DIODE
Contextual Info: INTERNATIONAL RECTIFIER 11E D | 4ÖSS4SS 0000774 Data Sheet No. PD-9.445A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER N-CHAIMNEL POWER MOSFETs TO-247AC PACKAGE 400 Volt, 0.30 Ohm HEXFET TO-247AC TO-3P Plastic Package R IRFP350 IRFP351 IRFP35S IRFP353

TO274

Abstract: aluminium pop rivet WARTH TO-273 SUPER-220 austerlitz AN-1000 AN-1010 AN-1012 AN1012
Contextual Info: Application Note AN-1012 Mounting Considerations for International Rectifier’s Power Semiconductor Packages By Pamela Dugdale and Arthur Woodworth, International Rectifier Table of Contents Page Introduction .1

AN-1031

Contextual Info: Application Note AN-1031 Lead Bending Considerations for International Rectifier’s Power Semiconductor Packages By Doug Butchers and Mark Steers, International Rectifier Table of Contents Page Lead Bending .2

Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION

TR C458

Abstract: transistors c458 IRFP040 IRFP042 C458 C C459 TIL 220 L740 c458 c455
Contextual Info: INTERNATIONAL RECTIFIER INTERNATIONAL H E D I 4Ö55455 T-39-13 Data Sheet No. PD-9.463A RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS I« R IRFP040 IRFPQ42 N-CHANNEL POWER MOSFETs TO-S47AC PACKAGE Product Summary 50 Volt, 0.028 Ohm, HEXFET TO-247AC TO-3P Plastic Package

g371

Abstract: IRFF330 IRFF331 IRFF332 IRFF333 510 MOSFET EC07 CIRCUIT g371
Contextual Info: HE D | MöSSMSa QGCHB'ìM 0 | INTERNATIONAL Data Sheet No. PD-9.357E _ T-39-Û9 RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IÖR IRFF330 IRFF331 N-CHAIUNEL POWER MOSFETs TO-39 PACKAGE IRFF33S IRFF333 400 Volt, 1.0 Ohm HEXFET Features: The HEXFET technology is the key to International

Contextual Info: INTERNATIONAL RECTIFIER 48 5 5 4 5 2 SS INTERNATIONAL RECTIFIER m T| 4 8 5 5 ^ 2 QQQS11S S~|~~ 55 C 05115 Data Sheet No. PD-2.081 INTERNATIONAL RECTIFIER IO R - T 0 3 - A J 55HQ SERIES 60 Amp Schottky Power Rectifiers Major Ratings and Characteristics Characteristic

501-3B

Contextual Info: INTERNATIONAL R E C T I F I E R 2bE D • 4ÔS5452 G0 104SC1 ? ■ Data Sheet No. PD-5.013B International Rectifier 1 3 3n HEXFET Power Module _ ” - ^ CPYIOO Séries Power Half-Bridges Product Summary Description/Features

f422

Abstract: transistor f422 tr f422 G-377 IRFF423 358E IRFF420 IRFF421 IRFF422 420 Diode 2ba
Contextual Info: HE D I 4055452 INTERNATIONAL 0001400 2 | Data Sheet No. PD-9.358E RECTIFIER INTERNATIONAL RECTIFIER TOR T-39-09 HEXFET TRANSISTORS IRFF4SQ IRFF421 N-CHANNEL POWER MOSFETs TO-3S PACKAGE Q [I IRFF4SS IRFF4S3 500 Volt, 3.0 Ohm HEXFET Features: T he HEXFET® technology is the key to International

k3226

Abstract: LD 7751 os lg washing machine control circuit lg washing machine irf234 n washing machine lg IRF234 F234
Contextual Info: HE D I MflSS4SS aOQTOlO 2 | Data Sheet No. PD-9.474B INTERNATIONAL RE CTIFIER INTERNATIONAL RECTIFIER I« R T-39-11 HEXFET TRANSISTORS IR F234 IR F235 NCHANNEL 250 Volt, 0.45 Ohm HEXFET The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors.

IRFIP450

Abstract: IRFIP150 IRFIP250 IRFIP350 THOMSON DISTRIBUTOR 58e d IRFIP244 IRFI630 THOMSON 58E THOMSON 58E CASE OUTLINE THOMSON DISTRIBUTOR
Contextual Info: THOMSON/ DISTRIBUTOR sflE ç m Toab a73 ooos?^? 330 • tcs< HEXFET Power MOSFETs International .'*»1Rectifier FullPak N-Charmel New Product FullPak Fully-isolated HEXFETs International Rectifier is proud to introduce its FullPak line of fullyisolated power MOSFETs. Available in popular-sized package outlines,

DP1110

Abstract: lr32053
Contextual Info: INTERNATIONAL RECTIFIER bSE ]> • MflSSMSS OOlfc.347 114 ■ INR Data Sheet No. PD-1.017B INTERNATIONAL RECTIFIER IOR SERIES DP Microelectronic Power IC Relay 1 Amp ChipSwitch DIP Relay 20280VAC S’X Power IC Chips ■ 30 Amp« Surge ■ 4000V RMS Isolation ■

GG1Q

Abstract: Cpv25 DQ1Q447 HEXFET Characteristics IRFC460
Contextual Info: INTERNATIONAL RECTIFIER 2bE T> • 4 0 55 4 5 5 DQ1Q447 Q ■ Data Sheet No. PD-5.Q20B t -3 °i-a .ri international S Rectifier HEXFET Power Module CPW200 Series Power H-Bridges Description/Features Product Summary The CPW 200 series of HEX FE T power modules are

Contextual Info: • International S Rectifier INTERNATIONAL RECTIFIER bSE SERIES MT-K Power Modules THREE PHASE AC SWITCH 50A 90A 100A Features ■ MÖ5SMS2 0Dlb554 45e! ■ INR Package fully compatible with the industry standard IN T-A -pak power modules series ■ High thermal conductivity package, electrically

IRFT002

Abstract: irfc9024 IRFC9120 IRFT001 IRFC120 HEXFET Characteristics irfc024 60V Single N-Channel HEXFET Power MOSFET HEXFET Power MOSFET P-Channel
Contextual Info: INTERNATIONAL RECTIFIER bSE » • 4flS5MS2 G d l b t m 0T7 H I N R Preliminary Data Sheet No. PD-5.021D International S Rectifier HEXFET Power Module IRFT001 & IRFT002 3-Phase Bridges Product Summary Description/Features The IRFT series of HEXFET power modules are

Contextual Info: INTERNATIONAL RECTIFIER 5bE D • 4 fl 5 S4 5 2 0010473 1 ■ Data Sheet Nú. PD-5.016B t '& i- a . 'j international @ Rectifier HEXFET Power Module CPY400 Series Unipolar Drivers Product Summary Descri ption/Featu res The CPY400 series of HEXFET power modules are

IRFC9024

Abstract: CPY302F HEXFET Power MOSFET P-Channel 1000 V N-channel mosfet IRFC024 302F 60V Single N-Channel HEXFET Power MOSFET Scans-007982 HEXFET Characteristics
Contextual Info: INTERNATIONAL RECTIFIER bSE J> m 4055*452 Oülb'ÎD'l Ô7b • INR Data Sheet No. PD-5.015D International [^Rectifier HEXFET Power Module CPY302F 3-Phase Bridges Description/Features Product Summary The CPY302F HEXFET power module is intended for use in driving sub-fractional horsepower DC brushless

mosfet j142

Abstract: j143 J141 mosfet IRFJ142 J141 j142 IRFJ140 IRF 140 G527 IRFJ141
Contextual Info: HE D I MÛSS4S2 OOQTSSQ 0 | Data Sheet No. PD-9.402A INTERNATIONAL R E C T I F I E R I«R INTERNATIONAL RECTIFIER T-39-11 IRFJ140 HEXFET TRANSISTORS IRFJ141 N-CHANNEL POWER MOSFETs IRFJ14 2 IRFJ143 100 Volt, 0.085 Ohm HEXFET The HEXFET® technology is the key to International

g419

Abstract: G-424 g424 lg diode 923 TC1602e 384F IRFF130 IRFF9230 IRFF9231 IRFF9232
Contextual Info: HE D I 4055452 □□0C!44E ? | Data Sheet No. PD-9.384F INTERNATIONAL R E C T IFIE R INTERNATIONAL RECTIFIER T -3 9 -1 9 HEXFET TRANSISTORS P-CHANNEL POWER MOSFETs TO-39 PACKAGE IRFF9231 G IRFFS232 ^—6s -200 Volt, 0.8 Ohm HEXFET Features: The HEXFET® technology is the key to International Rectifier’s

schematic powerline

Abstract: hexfets irf254 DIODE FAH 45
Contextual Info: 4Ö55M52 QGüö'ibO 2 | Preliminary Data Sheet No. PD-5.013A INTERNATIONAL R E C T IF IE R INTERNATIONAL RECTIFIER TOR HEXFET* Power Module CPY100-Series Power Half-Bridges The CPY100 series of power modules are half­ bridge configured HEXFETs, in a practical, heatsinkable electrically isolated S IP single in-line

IRF p 536 MOSFET

Abstract: IRF 534 100-C IRFJ220 IRFJ221 IRFJ222 IRFJ223 FJ222 LG t
Contextual Info: HE D I 4ÛSS45Z GaOTSSt, 0 | Data Sheet No. PD-9.403A T-39-11 INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER I « R IRFJSSO HEXFET TRANSISTORS IRFJ221 N-CHANNEL POWER MOSFETs IRFJ222 IRFJ223 200 Volt, 0.8 Ohm HEXFET T h e HEXFET® technology is the key to International

IRFZ48N

Abstract: IRFz48N MOSFET
Contextual Info: PD - 9.1406A International IÖR Rectifier IRFZ48N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description Fifth Generation HEXFETsfrom International Rectifier