INTERNATIONAL POWER DEVICES Search Results

tg0-j

Abstract: 60SQ100 50SQ100 sq0455 IR 50SQ100
Contextual Info: _ _ l< INTERNATIONAL RECTIFIER 4855452 SS INTERNATIONAL DE | l»ô 5S4S2 ODDSOSl S 55C R EC TIFIER 05051 Data Sheet No. PD-2.060A V - o 3 - / 7 I“R INTERNATIONAL RECTIFIER 50SQ SERIES 5 Amp Schottky Power Rectifiers

55C05

Abstract: 50HQ020
Contextual Info: INTERNATIONAL RECTIFIER 4855452 "55 4 355455 0005103 55C 05 103 INTERNATIONAL RECTIFIER D Data Sheet No. PD-2.032D INTERNATIONAL RECTIFIER X O R 50HQ, 1N6097 & 38 SERIES 50 and 60 Amp Schottky Power Rectifiers Major Ratings and Characteristics Characteristic

C528 transistors

Abstract: C528 DIODE
Contextual Info: INTERNATIONAL RECTIFIER 11E D | 4ÖSS4SS 0000774 Data Sheet No. PD-9.445A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER N-CHAIMNEL POWER MOSFETs TO-247AC PACKAGE 400 Volt, 0.30 Ohm HEXFET TO-247AC TO-3P Plastic Package R IRFP350 IRFP351 IRFP35S IRFP353

TO274

Abstract: aluminium pop rivet WARTH TO-273 SUPER-220 austerlitz AN-1000 AN-1010 AN-1012 AN1012
Contextual Info: Application Note AN-1012 Mounting Considerations for International Rectifier’s Power Semiconductor Packages By Pamela Dugdale and Arthur Woodworth, International Rectifier Table of Contents Page Introduction .1

IRFC9130

Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430
Contextual Info: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power

AN-1031

Contextual Info: Application Note AN-1031 Lead Bending Considerations for International Rectifier’s Power Semiconductor Packages By Doug Butchers and Mark Steers, International Rectifier Table of Contents Page Lead Bending .2

Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION

TR C458

Abstract: transistors c458 IRFP040 IRFP042 C458 C C459 TIL 220 L740 c458 c455
Contextual Info: INTERNATIONAL RECTIFIER INTERNATIONAL H E D I 4Ö55455 T-39-13 Data Sheet No. PD-9.463A RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS I« R IRFP040 IRFPQ42 N-CHANNEL POWER MOSFETs TO-S47AC PACKAGE Product Summary 50 Volt, 0.028 Ohm, HEXFET TO-247AC TO-3P Plastic Package

g371

Abstract: IRFF330 IRFF331 IRFF332 IRFF333 510 MOSFET EC07 CIRCUIT g371
Contextual Info: HE D | MöSSMSa QGCHB'ìM 0 | INTERNATIONAL Data Sheet No. PD-9.357E _ T-39-Û9 RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IÖR IRFF330 IRFF331 N-CHAIUNEL POWER MOSFETs TO-39 PACKAGE IRFF33S IRFF333 400 Volt, 1.0 Ohm HEXFET Features: The HEXFET technology is the key to International

irft 200

Abstract: IRFT002 irfc9024 HEXFET Power MOSFET P-Channel IRFT004 IRFT001 irfc9
Contextual Info: INTERNATIONAL RECTIFIER 2bE D • 4055452 QG1Q44B 3 ■ Preliminary Data Sheet No. PD-S.021B -3*?-a 7 International H>! Rectifier HEXFET Power Module IRFT Series 3-Phase Bridges Product Summary Description/Features The IRFT series of HEXFET power modules are

Contextual Info: INTERNATIONAL RECTIFIER 48 5 5 4 5 2 SS INTERNATIONAL RECTIFIER m T| 4 8 5 5 ^ 2 QQQS11S S~|~~ 55 C 05115 Data Sheet No. PD-2.081 INTERNATIONAL RECTIFIER IO R - T 0 3 - A J 55HQ SERIES 60 Amp Schottky Power Rectifiers Major Ratings and Characteristics Characteristic

501-3B

Contextual Info: INTERNATIONAL R E C T I F I E R 2bE D • 4ÔS5452 G0 104SC1 ? ■ Data Sheet No. PD-5.013B International Rectifier 1 3 3n HEXFET Power Module _ ” - ^ CPYIOO Séries Power Half-Bridges Product Summary Description/Features

f422

Abstract: transistor f422 tr f422 G-377 IRFF423 358E IRFF420 IRFF421 IRFF422 420 Diode 2ba
Contextual Info: HE D I 4055452 INTERNATIONAL 0001400 2 | Data Sheet No. PD-9.358E RECTIFIER INTERNATIONAL RECTIFIER TOR T-39-09 HEXFET TRANSISTORS IRFF4SQ IRFF421 N-CHANNEL POWER MOSFETs TO-3S PACKAGE Q [I IRFF4SS IRFF4S3 500 Volt, 3.0 Ohm HEXFET Features: T he HEXFET® technology is the key to International

k3226

Abstract: LD 7751 os lg washing machine control circuit lg washing machine irf234 n washing machine lg IRF234 F234
Contextual Info: HE D I MflSS4SS aOQTOlO 2 | Data Sheet No. PD-9.474B INTERNATIONAL RE CTIFIER INTERNATIONAL RECTIFIER I« R T-39-11 HEXFET TRANSISTORS IR F234 IR F235 NCHANNEL 250 Volt, 0.45 Ohm HEXFET The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors.

DP1110

Abstract: lr32053
Contextual Info: INTERNATIONAL RECTIFIER bSE ]> • MflSSMSS OOlfc.347 114 ■ INR Data Sheet No. PD-1.017B INTERNATIONAL RECTIFIER IOR SERIES DP Microelectronic Power IC Relay 1 Amp ChipSwitch DIP Relay 20280VAC S’X Power IC Chips ■ 30 Amp« Surge ■ 4000V RMS Isolation ■

Contextual Info: HE D I 4AS5452 □ Ga'mEM S | Data Sheet No. PD-9.360E INTERNATIONAL RECTIFIER !I “ R I _ INTERNATIONAL RECTIFIER T-39-19 HEXFET TRANSISTORS P-CHANNEL POWER MOSFETs TO-39 PACKAGE -1 0 0 Volt, 0.30 Ohm HEXFET T h e H EXFET® technology is the key to International Rectifier's

GG1Q

Abstract: Cpv25 DQ1Q447 HEXFET Characteristics IRFC460
Contextual Info: INTERNATIONAL RECTIFIER 2bE T> • 4 0 55 4 5 5 DQ1Q447 Q ■ Data Sheet No. PD-5.Q20B t -3 °i-a .ri international S Rectifier HEXFET Power Module CPW200 Series Power H-Bridges Description/Features Product Summary The CPW 200 series of HEX FE T power modules are

Contextual Info: • International S Rectifier INTERNATIONAL RECTIFIER bSE SERIES MT-K Power Modules THREE PHASE AC SWITCH 50A 90A 100A Features ■ MÖ5SMS2 0Dlb554 45e! ■ INR Package fully compatible with the industry standard IN T-A -pak power modules series ■ High thermal conductivity package, electrically

IRFT002

Abstract: irfc9024 IRFC9120 IRFT001 IRFC120 HEXFET Characteristics irfc024 60V Single N-Channel HEXFET Power MOSFET HEXFET Power MOSFET P-Channel
Contextual Info: INTERNATIONAL RECTIFIER bSE » • 4flS5MS2 G d l b t m 0T7 H I N R Preliminary Data Sheet No. PD-5.021D International S Rectifier HEXFET Power Module IRFT001 & IRFT002 3-Phase Bridges Product Summary Description/Features The IRFT series of HEXFET power modules are

Contextual Info: INTERNATIONAL RECTIFIER 5bE D • 4 fl 5 S4 5 2 0010473 1 ■ Data Sheet Nú. PD-5.016B t '& i- a . 'j international @ Rectifier HEXFET Power Module CPY400 Series Unipolar Drivers Product Summary Descri ption/Featu res The CPY400 series of HEXFET power modules are

IRFC9024

Abstract: CPY302F HEXFET Power MOSFET P-Channel 1000 V N-channel mosfet IRFC024 302F 60V Single N-Channel HEXFET Power MOSFET Scans-007982 HEXFET Characteristics
Contextual Info: INTERNATIONAL RECTIFIER bSE J> m 4055*452 Oülb'ÎD'l Ô7b • INR Data Sheet No. PD-5.015D International [^Rectifier HEXFET Power Module CPY302F 3-Phase Bridges Description/Features Product Summary The CPY302F HEXFET power module is intended for use in driving sub-fractional horsepower DC brushless

photovoltaic module

Abstract: SCHNEIDER PLC PVA1054 PVA1354 PVA3354 PVAZ172 PVD1054 PVD1354 PVD3354 PVDZ172
Contextual Info: AN-107 Short Circuit Withstand Capability of the Photovoltaic Relay BOSFET is a trademark o f International Rectifier by Stan Schneider Introduction International Rectifier's power 1C, the Bidirectional Output Switch Field Effect Transistor (BOSFET), is designed

mosfet j142

Abstract: j143 J141 mosfet IRFJ142 J141 j142 IRFJ140 IRF 140 G527 IRFJ141
Contextual Info: HE D I MÛSS4S2 OOQTSSQ 0 | Data Sheet No. PD-9.402A INTERNATIONAL R E C T I F I E R I«R INTERNATIONAL RECTIFIER T-39-11 IRFJ140 HEXFET TRANSISTORS IRFJ141 N-CHANNEL POWER MOSFETs IRFJ14 2 IRFJ143 100 Volt, 0.085 Ohm HEXFET The HEXFET® technology is the key to International

g419

Abstract: G-424 g424 lg diode 923 TC1602e 384F IRFF130 IRFF9230 IRFF9231 IRFF9232
Contextual Info: HE D I 4055452 □□0C!44E ? | Data Sheet No. PD-9.384F INTERNATIONAL R E C T IFIE R INTERNATIONAL RECTIFIER T -3 9 -1 9 HEXFET TRANSISTORS P-CHANNEL POWER MOSFETs TO-39 PACKAGE IRFF9231 G IRFFS232 ^—6s -200 Volt, 0.8 Ohm HEXFET Features: The HEXFET® technology is the key to International Rectifier’s