INFINEON X-GOLD 116 Search Results

X-GOLD 118

Abstract: xgold 118 ARM11 processor Infineon X-GOLD 116 X-GOLD x-goldtm ARM11 baseband block diagram of wireless gsm camera infineon x-gold gsm modem block diagram
Contextual Info: Product Brief X-GOLDTM116 Ultra-low cost GSM/GPRS Single-Chip Solution for Messaging Phones Main Features THE Infineon X-GOLD 116 is the first Single-Chip in 65nm CMOS technology that integrates Baseband, RF Transceiver, Power Management Unit and FM Radio. After the successful market introduction of the 2nd generation

Contextual Info: PTF 102079 LDMOS RF Power Field Effect Transistor 30 Watt, DCS/PCS Band, 1930–1990 MHz Description Key Features The PTF 102079 is a 30–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. This LDMOS device operates at 47% efficiency P–1dB . Full gold metallization ensures excellent device lifetime and reliability.

PTF+102015

Abstract: PTF102015 102015
Contextual Info: PTF 102015 LDMOS RF Power Field Effect Transistor 30 Watts, 2110–2170 MHz Description Key Features The PTF 102015 is a 30–watt internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This LDMOS device operates at 47% efficiency with 16 dB gain. Full gold metallization ensures

PTF210301A

Abstract: PTF210301E
Contextual Info: PTF210301A High Power RF LDMOS Field Effect Transistor 30 W, 2110 – 2170 MHz PTF210301A Package 20265 Description The PTF210301A is a 30-watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

TRANSISTOR tl131

Contextual Info: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include

PTF210301E

Abstract: marking us capacitor pf l1 PTF210301 PTF210301A DD 127 D TRANSISTOR
Contextual Info: PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description Features The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

Contextual Info: PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description Features The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

PC100-222

Abstract: PC133-333 TSOP54 HYS64V32220GD-7 HYS64V32220GD-8-C2 HYS64V32220GDL-8
Contextual Info: 3.3V SDRAM Modules HYS64V32220GD L 256MB PC100/PC133 144 pin SO-DIMM SDRAM Modules Datasheet • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for notebook applications • Two bank 32M x 64 (256 MByte) non-parity module organisation

TRANSISTOR tl131

Abstract: 100B100JW500X tl241 tl239 TRANSISTOR c104 c102 TRANSISTOR TMM4 A2322 c103 TRANSISTOR TL107 linear
Contextual Info: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include

Contextual Info: 3.3V SDRAM Modules HYS64V32220GD L 256MB PC100 144 pin SO-DIMM SDRAM Modules Preliminary Datasheet • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for notebook applications • Two bank 32M x 64 non-parity module organisation •

PC100-322

Abstract: SO-DIMM 144-pin
Contextual Info: 3.3V SDRAM Modules HYS64V32220GD L -8A 256MB PC100 144 pin SO-DIMM SDRAM Modules Preliminary information • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC 100 notebook applications • Two bank 32M x 64 non-parity module organisation

HYS64V16220GDL

Abstract: HYS64V16220GDL-7 HYS64V16220GDL-8
Contextual Info: 3.3V SDRAM Modules HYS64V16220GDL 144 pin SO-DIMM SDRAM Modules PC100 / PC133 128 MB density Target Datasheet • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC 100 and PC133 notebook applications • two bank 16M x 64 non-parity module organisation

PCC104bct-nd

Contextual Info: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.

Contextual Info: 3.3V SDRAM Modules HYS64V8200GDL HYS64V16220GDL 144 pin SO-DIMM SDRAM Modules PC100 / PC133 64MB & 128 MB density • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC 100 and PC133 notebook applications • one bank 8M x 64 and two bank 16M x 64 non-parity module organisation

dimm pcb layout

Abstract: HYS64V8200GDL-7 HYS64V8200GDL-8 HYS64V16220GDL HYS64V16220GDL-7 HYS64V16220GDL-8 HYS64V8200GDL
Contextual Info: 144 pin SO-DIMM SDRAM Modules HYS64V8200GDL HYS64V16220GDL 64MB & 128 MB PC100 / PC133 • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC 100 and PC133 notebook applications • one bank 8M x 64 and two bank 16M x 64 non-parity module organisation

HYS64V32220GBDL-8-C2

Contextual Info: 144 pin SO-DIMM SDRAM Modules HYS64V32220GBDL 256MByte PC100 & PC133 BOC • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for notebook applications • Two bank 32M x 64 non-parity module organisation • suitable for use in PC100 and PC133 applications

8mx64 infineon

Contextual Info: 3.3V SDRAM Modules HYS64V8200GDL HYS64V16220GDL HYS64V16221GDL 144 pin SO-DIMM SDRAM Modules PC100 / PC133 64MB & 128 MB density Preliminary Datasheet • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC 100 and PC133 notebook applications

32MX64

Abstract: pc133 256 MB SDRAM SODIMM package SO-DIMM 144-pin
Contextual Info: 3.3V SDRAM Modules HYS64V32220GCDL • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for notebook applications • Two bank 32M x 64 non-parity module organisation • suitable for use in PC100 and PC133 applications • Performance:

sdram pcb layout

Abstract: HYS64V8200GDL HYS64V16220GDL HYS64V16220GDL-7 HYS64V8200GDL-7 HYS64V8200GDL-8
Contextual Info: 3.3V SDRAM Modules HYS64V8200GDL HYS64V16220GDL 144 pin SO-DIMM SDRAM Modules PC100 / PC133 64MB & 128 MB density • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC 100 and PC133 notebook applications • one bank 8M x 64 and two bank 16M x 64 non-parity module organisation

HYS64V64220GBDL

Abstract: MO-190
Contextual Info: 144 pin SO-DIMM SDRAM Modules HYS64V64220GBDL 512 MB PC100 / PC133 • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for notebook applications • Two bank 64M x 64 non-parity module organisation • suitable for use in PC100 and PC133 applications

Contextual Info: 3.3V 8M x 64/72-Bit 1 BANK SDRAM Module 3.3V 16M x 64/72-Bit 2 BANK SDRAM Module HYS64/72V8200GU-7.5 HYS64/72V16220GU-7.5 PC133 168 pin unbuffered DIMM Modules • 168 Pin PC133-compatible unbuffered 8 Byte Dual-ln-Line SDRAM Modules for PC main memory applications

HYS64V16220GDL-8-C2

Abstract: HYS64V16220GDL HYS64V16220GDL-7 HYS64V16220GDL-8 HYS64V8200GDL HYS64V8200GDL-7 HYS64V8200GDL-8 16X64 PC133-333 144
Contextual Info: 144 pin SO-DIMM SDRAM Modules HYS64V8200GDL HYS64V16220GDL 64MB & 128 MB PC100 / PC133 • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC 100 and PC133 notebook applications • one bank 8M x 64 and two bank 16M x 64 non-parity module organisation

Contextual Info: HYS 64V8301GU SDRAM-Modules 3.3 V 8M x 64-Bit 1 Bank, 64MByte SDRAM Module 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmed Latencies: Product Speed CL tRCD tRP 2 • PC100-222, PC133-333 and PC133-222

MO-161

Abstract: PC100-222 PC133-222 PC133-333 TSOP54
Contextual Info: HYS 64V8301GU SDRAM-Modules 3.3 V 8M x 64-Bit 1 Bank SDRAM Module 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmed Latencies: Product Speed CL tRCD tRP • PC100-222, PC133-333 and PC133-222