INFINEON TO-220 DATE CODE MARKING Search Results

Contextual Info: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS28/W " ! ,  ,  Type Package Configuration Marking BAS28 BAS28W SOT143 SOT343

marking CODE JTS

Abstract: BAS28 marking CODE JTS 56 BAS28W BFP181 BGA420
Contextual Info: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS28/W " ! ,  ,  Type Package Configuration Marking BAS28 BAS28W SOT143 SOT343

BAS28

Contextual Info: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes BAS28/W " ! ,  ,  Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified

mosfet marking code gg

Contextual Info: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040

BAR66

Contextual Info: BAR66. Silicon PIN Diode Array • Surge protection device • Designed for surge overvoltage clamping in antiparallel connection BAR66 3 D 1 D 2 1 2 Type BAR66 Package SOT23 Configuration series LS nH Marking 1.8 PMs Maximum Ratings at TA = 25°C, unless otherwise specified

BF2040W

Contextual Info: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040

marking CODE JTS

Abstract: BAS28
Contextual Info: BAS28. Silicon Switching Diode
For high-speed switching applications
Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified

BAS28

Contextual Info: BAS28. Silicon Switching Diode
For high-speed switching applications
Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified

e2 marking

Abstract: MARKING 120 sot143 BCV62 BCV62A BCV62B BCV62C BFP181 VPS05178 transistor marking E2 marking 3Ls
Contextual Info: BCV62 PNP Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration

transistor marking T2

Contextual Info: BCV62 PNP Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration

2I k

Contextual Info: BAR66. Silicon PIN Diode Array • Surge protection device • Designed for surge overvoltage clamping in antiparallel connection • Pb-free RoHS compliant package BAR66 ! ,  ,  Type BAR66 Package SOT23 Configuration series LS(nH) 1.8 Marking PMs Maximum Ratings at TA = 25°C, unless otherwise specified

E6327

Abstract: DIN 6784 BF2040 BF2040R BF2040W BFP181 BGA420 sot143 marking code G2 p 1S marking SOT143
Contextual Info: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040

BAT54

Abstract: bat54-04w BAT54-02LRH BAT54-02V BAT54-04 BAT54-05 BAT54-05W BAT54-06 BAT54-06W BAT54W
Contextual Info: BAT54. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Guard ring protected • Low forward voltage BAT54-02LRH BAT54-02V BAT54 BAT54W BAT54-04 BAT54-04W 3 1 3 2 1 Type BAT54 BAT54-02LRH*

Contextual Info: BAT54. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Guard ring protected • Low forward voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAT54-02LRH

BCR108W

Abstract: BF799W
Contextual Info: BF799W NPN Silicon RF Transistor • For linear broadband amplifier application up to 500 MHz 3 • SAW filter driver in TV tuners 2 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Type BF799W Marking LKs 1=B Pin Configuration 2=E

bat54

Abstract: c125t-a BAT54 SOT323 datasheet bat54 BAT54 SOT23 BAT54-04 BAT54 datasheet DIODE MARKING CODE LAYOUT G SOT23 TSLP-2-7 BAT54-02LRH
Contextual Info: BAT54. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Guard ring protected • Low forward voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAT54-02LRH

BAT54

Contextual Info: BAT54. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Guard ring protected • Low forward voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAT54-02LRH

BAT54

Abstract: MARKING CODE 140
Contextual Info: BAT54. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Guard ring protected • Low forward voltage • Pb-free RoHS compliant package • Qualified according AEC Q1011) BAT54-02LRH

Contextual Info: BF799W NPN Silicon RF Transistor • For linear broadband amplifier application up to 500 MHz 3 • SAW filter driver in TV tuners 2 1 • Pb-free RoHS compliant package Type Marking BF799W LKs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings

BAT54 SOT323

Abstract: BAT54 BAT54-02LRH BAT54 application
Contextual Info: BAT54. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Guard ring protected • Low forward voltage • Pb-free RoHS compliant package • Qualified according AEC Q1011) BAT54-02LRH

marking 1ks

Abstract: BCV61
Contextual Info: BCV61 NPN Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration

TSFP-3

Abstract: marking code 10 sot23 BCR108T BCR196 BCR196F BCR196L3 BCR196T BCR196W SC75
Contextual Info: BCR196. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47kΩ , R2 = 22kΩ BCR196/F/L3 BCR196T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR196 WXs 1=B

WL sot23

Abstract: marking code 10 sot23 BCR108T BCR146 BCR146F BCR146L3 BCR146T BCR146W SC75
Contextual Info: BCR146. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=47kΩ, R2 =22kΩ BCR146/F/L3 BCR146T/W C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration BCR146 WLs 1=B 2=E

Contextual Info: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT2222A/ MMBT2222A NPN 2 1 Type Marking SMBT2907A/MMBT2907A s2F 1=B Pin Configuration