INFINEON MARKING BS Search Results

TRANSISTOR SMD MARKING CODE kd

Contextual Info: BSP 123 Infineon t echnologi es SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •W = a8 -2 0V Type Vbs b f lDS on) Package Marking 0.38 A 6n SOT-223 BSP 123 BSP 123 100 V Type Ordering Code Tape and Reel Information

Contextual Info: BSS 229 Infineon technologies SIPMOS Small-Signal Transistor • • • • • • • VDS 250 V /0 0.07 A ^DS on 1 0 0 i l N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Pin C onfigu ration Marking Tape and Reel Inform ation

smd transistor m7

Contextual Info: BSP 317 Infineon •eh n o l o g I«s SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS(th = "0.8.-2.0 V V) sP Type BSP 317 -200 V Type BSP 317 Ordering Code Q67000-S94 -0.37 A ffDS(on) Package 6O SOT-223 Marking

smd code LGG

Contextual Info: BSP 88 Infineon technologies SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level •^GS th = 0.6. 1.2V Type BSP 8 8 Type BSP 8 8 ^bs h> 240 V 0.32 A Ordering Code Q67000-S070 ^DS(on) 8 Q Package Marking SOT-223 BSP 88 Tape and Reel Information

A1E transistor

Contextual Info: B S 107 Infineon tcehnologi*» SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 •^GS th = 0.8.2.0V Pin 1 VPT05548 Pin 2 S Pin 3 G Type Vbs fe BDS(on) Package Marking BS 107 200 V 0.13 A 26 a tO -92 BS 107 Type BS 107

Contextual Info: BSS 145 Infineon t«ehno!ogi6* SIPMOS Small-Signal Transistor • N channel s \A • Enhancement mode 2 • ^GS th = 1 4 -2-3 V 1 Pin 1 Pin 2 Vbs BSS 145 65 V Type BSS 145 Ordering Code Q67000-S132 0.22 A Pin 3 S G Type VPS05557 flDS(on) Package Marking

JB TRANSISTOR SMD MARKING CODE

Abstract: Q62702-S217
Contextual Info: BSS 296 Infineon t« c h n o lo g t« s SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •^ G S th 3 = 0.8.2.0V Pin 1 VPTO5540 Pin 2 G (/> Type k> ^ D S (o n ) Package Marking 0.8 A 0.8 fl TO-92 SS 296 BSS 296 100 V

Contextual Info: BSP50-BSP52 NPN Silicon Darlington Transistors • High collector current 4 • Low collector-emitter saturation voltage 3 2 • Complementary types: BSP60 - BSP62 PNP 1 • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration

BCP62

Abstract: 1B marking transistor BSP50 BSP52 BSP60 BSP61 BSP62
Contextual Info: BSP60-BSP62 PNP Silicon Darlington Transistor • High collector current 4 • Low collector-emitter saturation voltage 3 2 • Complementary types: BSP50.BSP52 NPN 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking

Contextual Info: BSP60-BSP62 PNP Silicon Darlington Transistor • High collector current 4 • Low collector-emitter saturation voltage 3 2 • Complementary types: BSP50.BSP52 NPN 1 • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration

Contextual Info: n-Channel Power MOSFET OptiMOS BSB044N08NN3 G Data Sheet 1.4, 2011-05-27 Preliminary Industrial & Multimarket OptiMOS™ Power-MOSFET BSB044N08NN3 G 1 Description OptiMOS™80V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together

BSP 450

Contextual Info: BSP60 . BSP62 PNP Silicon Darlington Transistors
High collector current 4
Low collector-emitter saturation voltage
Complementary types: BSP50 . BSP52 NPN 3 2 1 Type Marking Pin Configuration BSP60 BSP 60 1=B 2=C 3=E 4=C SOT223 BSP61 BSP 61 1=B

Contextual Info: n-Channel Power MOSFET OptiMOS BSB012NE2LX Data Sheet 2.2, 2011-06-03 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB012NE2LX 1 Description OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together

Contextual Info: n-Channel Power MOSFET OptiMOS BSB012NE2LX Data Sheet 2.3, 2011-09-16 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB012NE2LX 1 Description OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together

Contextual Info: n-Channel Power MOSFET OptiMOS BSB014N04LX3 G Data Sheet 2.3, 2011-05-24 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB014N04LX3 G 1 Description OptiMOS™40V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together

BSB165N15NZ3 G

Contextual Info: n-Channel Power MOSFET OptiMOS BSB165N15NZ3 G Data Sheet 2.2, 2011-07-20 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB165N15NZ3 G 1 Description OptiMOS™150V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together

powermosfet Gate Drive

Contextual Info: n-Channel Power MOSFET OptiMOS BSF077N06NT3 G Data Sheet 1.4, 2011-03-01 Preliminary Industrial & Multimarket OptiMOS™ Power-MOSFET BSF077N06NT3 G 1 Description OptiMOS™60V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together

Contextual Info: BSP50 . BSP52 NPN Silicon Darlington Transistors
High collector current 4
Low collector-emitter saturation voltage
Complementary types: BSP60 . BSP62 PNP 3 2 1 Type Marking Pin Configuration BSP50 BSP 50 1=B 2=C 3=E 4=C SOT223 BSP51 BSP 51 1=B

BCP62

Contextual Info: BSP60-BSP62 PNP Silicon Darlington Transistor • High collector current • Low collector-emitter saturation voltage 4 3 2 • Complementary types: BSP50.BSP52 NPN 1 Type Marking Pin Configuration Package BSP60 BSP60 1=B 2=C 3=E 4=C - - SOT223 BSP61 BSP61

BSP50

Abstract: BSP51 BSP52 BSP60 BSP50-BSP52
Contextual Info: BSP50-BSP52 NPN Silicon Darlington Transistors • High collector current • Low collector-emitter saturation voltage 4 3 2 • Complementary types: BSP60 - BSP52 PNP 1 Type Marking Pin Configuration Package BSP50 BSP50 1=B 2=C 3=E 4=C - - SOT223 BSP51

Contextual Info: n-Channel Power MOSFET OptiMOS BSB012NE2LX Data Sheet 2.2, 2011-06-03 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB012NE2LX 1 Description OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together

bsb008ne2lx

Contextual Info: n-Channel Power MOSFET OptiMOS BSB008NE2LX Data Sheet 1.3, 2011-09-16 Preliminary Industrial & Multimarket OptiMOS™ Power-MOSFET BSB008NE2LX 1 Description OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together

Contextual Info: n-Channel Power MOSFET OptiMOS BSB014N04LX3 G Data Sheet 2.3, 2011-05-24 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB014N04LX3 G 1 Description OptiMOS™40V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together

BSP603S2L

Abstract: VPS05163
Contextual Info: Target data sheet BSP603S2L OptiMOS =Small-Signal-Transistor Features Product Summary • N-Channel Drain source voltage VDS 55 V Drain-source on-state resistance RDS on 33 mΩ Continuous drain current ID 5.2 A • Enhancement mode • Avalanche rated