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BSB014N04LX3 Datasheets (3)

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Infineon Technologies

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BSB014N04LX3G		Infineon Technologies	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 180A 2WDSON	Original	PDF		13
BSB014N04LX3 G		Infineon Technologies	N-Channel MOSFETs (20V - 250V); Package: MG-WDSON-2; Package: CanPAK; V_DS (max): 40.0 V; R_{DS (on)} (max) (@10V): 1.4 mOhm; R_{DS (on)} (max) (@4.5V): 2.0 mOhm; I_D (max): 180.0 A;	Original	PDF	288.12KB	11
BSB014N04LX3GXUMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 180A 2WDSON	Original	PDF	1.49MB

BSB014N04LX3 Price and Stock

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Infineon Technologies AG


Infineon Technologies AG BSB014N04LX3GXUMA1 MOSFET, N-CH, 40V, 180A, MG-WDSON-2-2; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	BSB014N04LX3GXUMA1	Cut Tape			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	BSB014N04LX3GXUMA1		6,477			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG BSB014N04LX3GXT Power Field-Effect Transistor, 180A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	BSB014N04LX3GXT		198			1 - 10 - 100 - 1000 - 10000 -	Get Quote