INDUCTOR 73 MH Search Results

Contextual Info: TYPE Surface Mount Inductors D63LCB 73 TYPE D63LCB Frequency Range: 10kHz -1 MHz Inductance Range: 1 -1 50pH Recommended patterns: Features • • • • • Low profile 3.0mm max. Ideal for a variety of DC-DC converter inductor applications Magnetically shielded

HMC376LP3

Abstract: HMC376LP3E HMC382LP3
Contextual Info: HMC376LP3 / 376LP3E v00.1005 AMPLIFIERS - SMT 5 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz Typical Applications Features The HMC376LP3 / HMC376LP3E is ideal for: Noise Figure: 0.7 dB • Cellular/3G Infrastructure Output IP3: +36 dBm • Base Stations & Repeaters

Contextual Info: AWB512 AWB512 Data Sheet 5 ~ 1200 MHz Wide-band CATV Linear Amplifier MMIC 1. Product Overview 1.1 General Description AWB512, a wide-band linear amplifier MMIC, has high linearity and low noise over a wide range of frequency from 5 MHz to 1200 MHz, being suitable for use in the fiber receiver, distribution amplifiers and

Contextual Info: AWB519 AWB519 Data Sheet 5 ~ 1200 MHz Wide-band CATV Linear Amplifier MMIC 1. Product Overview 1.1 General Description AWB519, a wide-band linear amplifier MMIC, has high linearity and low noise over a wide range of frequency from 5 MHz to 1200 MHz, being suitable for use in the fiber receiver, distribution amplifiers and

Contextual Info: IHLP-6767GZ-01 Vishay Dale Low Profile, High Current IHLP Inductor FEATURES • Shielded construction • Frequency range up to 2.0 MHz • Lowest DCR/µH, in this package size • Handles high transient current spikes without saturation • Saturation and

Contextual Info: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB GA

PJ 0349

Abstract: PJ 2399 0709s
Contextual Info: mUKM PA C K A R D W hot HEWLETT General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA

A01 MMIC

Abstract: siemens inductor SIEMENS CAPACITOR C5 mmic a01 "Downconverting to 116 MHz" Siemens capacitor 0402 CAPACITOR SIEMENS BFP420 SIEMENS filter resistor 470ohm
Contextual Info: Application Note No. 054 Discrete & RF Semiconductors 869 - 894 MHz Receiver Front End Downconverting to 116 MHz Receiver Front End for 869 MHz to 894 MHz downconverting to 116 MHz including a Low Noise Amplifier with Gainstep and a Mixer with LO Buffer. The LNA stage, a BFP420, can be switched to high and low gain mode by changing the level

DECT transmitter siemens

Abstract: pindiode switch L234N A03 SMD microwave transistor siemens BAR63 BAR63-03W BAR80 SIMID02 ms32 equivalent
Contextual Info: Application Note No. 007 Discrete & RF Semiconductors DECT 1.9 GHz Transmit - Receive PIN-Diode Switch DECT cordless telephones operate at frequencies between 1880 MHz and 1900 MHz. The TDMA system employed requires a non mechanical transmit-receive switch to connect the

sod343

Abstract: diode V6 96 Lambda Semiconductors D400 transistor BAR63 BAR63-03W BAR80 BCR400 BCR400W D400
Contextual Info: Application Note No. 025 Discrete & RF Semiconductors 1400-1600 MHz PIN-Diode Transmit-Receive Switch This application note describes a non-mechanical transmit-receive switch for the PDC 1500 mobile telephone system. Advantages: • • • • • • no power consumption in receive state

SOT 23 AJW

Abstract: transistor TT 3034 Resistors 2306 181 AT-32032 AT-41532 AT-41532-BLK S21E 41532 mount chip transistor 332
Contextual Info: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB GA

Helmholtz Coil

Abstract: keyless go inductor 73 mh sdtr1103 TP1103
Contextual Info: TP1103 Single Axis Transponder Inductors SMD Hard Ferrite Transponder Inductor Features 10.5x2.9x2 mm 340 µH - 16.2 mH Dimensions This TP1103 Series of Surface Mountable ferrite wound inductor is a stronger solution in the standard dimensions 1103 and compatible with

D400 transistor

Abstract: sod343 transistor D400 microwave antenna 1500 MHz Schaffer transistors D400 AN025 D400R TR400
Contextual Info: Application Note No. 025 Discrete & RF Semiconductors 1400-1600 MHz PIN-Diode Transmit-Receive Switch This application note describes a non-mechanical transmit-receive switch for the PDC 1500 mobile telephone system. Advantages: • • • • • • no power consumption in receive state

marking code 02 mmic

Contextual Info: SIEMENS CGY 40 GaAs MMIC D a t a s h e e t * Single-stage monolithic microwave 1C MMICamplifier * Application range: 100 MHz to 3 GHz * Gain: 9 dB typ. @ 1.6 GHz * Low noise figure: 2.7 dB typ. @ 1.6 GHz * Bandwidth: 3 GHz typ. @ -3 dB, VSWR < 2 : 1 * Operating voltage range: 3 to 5.5 V

Contextual Info: What HEWLETT 1 "KM PACK ARD General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • G eneral P urpose NPN B ipolar T ran sistor O ptim ized for Low C urrent, Low V oltage A p p lications at 900 MHz, 1.8 GHz, and 2.4 GHz

5251f

Contextual Info: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET ARCHIVE INFORMATION Designed for broadband commercial and military applications using single

SU 179 transistor

Abstract: SU 179
Contextual Info: MOTOROLA O rder this docum ent by M RF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 1 0 0 W , 28 V, 500 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and military applications using single

Tektronix 2712

Abstract: 0805C104KAT2A
Contextual Info: Application Note 1817 November 2012 13.56 MHz, Class-D Half Bridge, RF Generator with DRF1400 Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com INTRODUCTION The DRF1400 is a MOSFET Half Bridge HB Hybrid Device which has been optimized for efficiency and reduced

transistor bc 5588

Abstract: BC 148 TRANSISTOR PIN CONFIGURATION transistor TT 2146 low noise transistor bc 234 transistor BC 575 INFORMATION OF IC 7424 transistor bc 658 1J Sot323
Contextual Info: Who I HEWLETT mL'KM PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32032 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance at 2.7 V, 5 mA:

CEREC

Contextual Info: SIEM ENS G a A s M M IC C G Y40 • Single-stage, monolithic microwave 1C MMIC amplifier • Application range: 100 MHz to 3 GHz • Gain: 9 dB typical, at 1.6 GHz • Low noise figure: 2.7 dB typical, at 1.6 GHz • Bandwidth: 3 GHz typical, at - 3 dB, VSWR < 2:1

LED5000

Contextual Info: LED5000 3 A monolithic step-down current source with dimming capability Datasheet - production data Applications • High brightness LED driving  Street lighting  Signage  Halogen bulb replacement HSOP8 HPSO8  General lighting Features Description

Contextual Info: LED5000 3 A monolithic step-down current source with dimming capability Datasheet - production data Applications • High brightness LED driving  Street lighting  Signage  Halogen bulb replacement HSOP8 HPSO8  General lighting Features Description

transistor TT 2146

Abstract: AT-32032 AT-32032-BLK AT-32032-TR1 60668 transistor ajw 64256
Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32032 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance at 2.7 V, 5 mA: 900 MHz: 1 dB NF, 15 dB GA

PJ 0416 1v

Abstract: PJ 1179
Contextual Info: What H E W LET T 1"KM PA C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32032 Features • High Perform ance Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Perform ance at 2.7 V, 5 mA: