IN 5359B Search Results

5356b

Abstract: 5352B 5353B in 5352b 5361B 1N5348B 5349B 5351B DO-201AE in 5349b
Contextual Info: DATA SHEET 1N5348B SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 11 to 39 Volts CURRENT 5.0 Watts Unit: inch mm DO-201AE FEATURES • For surface mounted applications in order to optimize board space. .042(1.07) .037(0.94) 1.0(25.4)MIN. • Low profile package

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

stepping motor EPSON EM - 234

Abstract: EPSON motor em 402 induction cooker fault finding diagrams ECG transistor replacement guide book free stepping motor EPSON EM 234 stepping motor EPSON em 331 S576B transistor d389 maranyl TMS1601A
Contextual Info: Issued March 1988 8773 Data Library Contents list and semiconductor device type index Data library contents Subject Title Number Communications Equipment B. T. telephone connection system Digital compact paging system Escort 2 + 6 telephone switching system

lad1 relay

Abstract: relay lad1 CNT17 1rx04 CIT relay
Contextual Info: Data Sheet September 1995 m ic r o e le c t r o n ic s group Lucent Technologies Bell Labs Innovations ATT1RX04 FORESPAR Four Managed Ethernet Repeaters Features • On-chip counters and registers support comprehen­ sive network management capabilities. This allows

Contextual Info: 1 N 5345 B.1 N 5388 B 5 W Silizium-Leistungs-Z-Dioden Silicon-Power-Z-Diodes Nominal breakdown voltage Nenn-Arbeitsspannung 8.7.200 V Tolerance o f zener voltage Toleranz der Arbeitsspannung ±5% /4 .5 " Plastic case KunststofFgehäuse ~ D0-201 Weight approx.

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

in5388b

Abstract: IN5340B IN5368B IN5342B IN 5342B IN5343b IN 5338B diode IN 5342B 5338B 5388b
Contextual Info: 1N 5333B thru 1N 5388B Micro/semi Corp. / SANTA ANA, CA The d'Ode e x p e n s SCOTTSDALE, AZ For more inform ation call: / 602 94I-6300 FEATURES SILICON 5 WATT ZENER DIODES • ZENER VOLTAGE 3.3V to 200V • HIGH SURGE CURRENT CAPABILITY • FOR AVAILABLE TOLERANCES - SEE NOTE I

in 5359b

Abstract: IN 5349B in 5352b 5357B 5346B 5369b 5349b 5388b 5345B 5352b
Contextual Info: Diotec 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes Ø 4.5 ±0.1 Silizium-Leistungs-Z-Dioden Nominal breakdown voltage Nenn-Arbeitsspannung 8.7…200 V Standard tolerance of Z-voltage Standard-Toleranz der Arbeitsspannung ± 5 % (E24) Plastic case – Kunststoffgehäuse

5338B

Abstract: 5339b 5359b 5341B zener 5359B 5340B 5344b 5366B 5353B zener diode ab
Contextual Info: 1N5333B thru 1N5388B Microsemi Corp. f The dtoóe experts / SANTA ANA, CA SCOTTSDALE, A Z / F o r m o re inform ation call: / 602 941-6300 SILICON 5 WATT ZENER DIODES FEATU RES • Z E N E R VO LTAG E 3.3V to 200V • HIGH S U R G E C U R R E N T C A P AB ILITY

5346B

Abstract: 5388B 5359B 5368B 5366B 5363b 5358B 5349B 5369b 5375B
Contextual Info: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse

5349B

Abstract: 5352B 5353B 5364b 5375B 5366B 5363B 5359B 5350B 5367B
Contextual Info: 1N 5347B … 1N 5388B 5 W Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse

IN 5349B

Abstract: 5377B 5357B 5368B 5363b in 5352b in 5359b 5349b 5364b 5352b
Contextual Info: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse

5346B

Abstract: 5349B 5375B 5353b 5359B 5345B 5350B 1n5376b 5361B 5358B
Contextual Info: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes Silizium-Leistungs-Z-Dioden Maximum power dissipation Maximale Verlustleistung Ø 4.5 5W ±0.1 7.5 ±0.1 62.5 ±0.5 Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse ~ DO-201 Weight approx. – Gewicht ca.

5349B

Abstract: 5357B 5364b 5366B 5352b 5359b 5369b 5363b 5353b 5350B
Contextual Info: 1N 5345B … 1N 5388B 5 W Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Silicon-Power-Z-Diodes (non-planar technology) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse

IN5350B

Abstract: 1N53588 IN5350 IN5388 IN5342B IN53888 1N53448 1N53358 IN5359b 1N53768
Contextual Info: INTERNATIONAL SEMICOND M'îE D T0G037Ö 0000G3L. Ô41 • I S E M International Semiconductor, Inc . 5 WATT Z E N E R DIOD ES H I G H S UR G E C U R R E N T C A PA B I LI T Y 3 . 3 TO 2 0 0 VOLTS 1N5333B thru 1N5388B ELECTRICAL CHARACTERISTICS @25’C REGULATOR

1N5958

Abstract: MLL5236B MLL34 MLL5243B lN3046 motorola 1N5956b 1N4728A MLL4728A MLL5221B MLL5222B
Contextual Info: General-Purpose Regulator Diodes continued 500 mW 1 W att 1 W att 1 .5 W att 5 W att N om inal Ze n e r Voltage Cathode = Po la rity M ark Cathode = Polarity M ark Cathode to Case Cathode = Polarity M ark C athode = Polarity M ark ('N ote 1) (•Notes 2 ,6 , 14)

in5338b

Abstract: in5338b Zener diode in5369b IN5338 in5333B IN5341 in5349b in53418 Zener diode in5347b IN5359b
Contextual Info: 1N 5333B thru 1N 5388B I Microsemi Corp. $ The diode experts SCOTTSDALE , AZ For more information call: 602 941-6300 SILICON 5 WATT ZENER DIODES FEATUR ES • ZENER VOLTAGE 3.3V to 200V • HIGH SURGE CURRENT CAPABILITY • FOR AVAILABLE TO LERANCES - SEE NOTE 1

5350B

Contextual Info: SILICOM_ _ D TOPES Us.A. CASK S ZENER :_ D O -4 1 _ D O -2 7 A_D O -2 7 1 .3 H • T a - 2 3 ° C ZEN E R D IO D E S _ Case DO-41 TEMP. 1 I ZT

5344b

Abstract: 5347b diode 5361B 5362B IN 5344B 5357B 5374B S200-2-00 5348B 5363B
Contextual Info: 1N5344B - 1 N5388B VISHAY 5WZENER DIODES fL IT E K K r P O W E R S E M IC O N D U C T O R j Features Voltage Range 8.2V - 200V Glass Passivated Junction 5W Steady State High Surge Capability ±5% Voltage Tolerance on Nominal Vz is Standard 100% Tested A A