IMPEDENCE Search Results

Contextual Info: • High fidelity, high density cable assemblies to meet high performance logic applications. i • Controlled impedence cable assemblies i are available at various levels to match the circuitry impedence. • Buss bar design maximizes design flexibility by allowing any contact

gz 346

Abstract: zener 5.1 B2
Contextual Info: NEW PRODUCT NEW PRODUCT GZ SERIES ZENER DIODES FEATURES ♦ Silicon Planar Power Zener Diodes min. 1.083 27.5 ♦ Voltage spectrum from 2.2V to 38V ♦ The Zener voltages are graded according to voltage bands instead of by tolerance max. ∅.079 (2.0) ♦ Low Zener impedence and low leakage current

GDZ12B-V

Abstract: GDZ5V6B-V GDZ3V9B-V GDZ5V1B-V gdz27b GDZ4V3B-V GDZ27B-V GDZ10B-V GDZ11B-V GDZ13B-V
Contextual Info: GDZ-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon planar power zener diodes • Low zener impedence and low leakage current • Popular in asian designs • Compact surface mount device • Ideal for automated mounting • Compliant to RoHS directive 2002/95/EC and in

LAYOUT PENTAWATT

Abstract: TDA2008 AUDIO CROSSOVER schematic car audio crossover sgs 8 r 15 TDA audio power amplifier 0.5w audio amplifier circuit diagram TDA2008V TDA-2008
Contextual Info: TDA2008 12W AUDIO AMPLIFIER Vs = 22V, RL = 4Ω DESCRIPTION The TDA2008 is a mololithic class B audio power amplifier in Pentawatt package designed for driving low impedence loads (down to 3.2Ω). The divice provides a high output current capability(up to 3A),

Johanson Technology 2450FB15L0001

Abstract: 2450fb15l0001 0896FB15A0100
Contextual Info: High Frequency Ceramic Solutions 863-928MHz ISM Balun-Filter Integrated passive P/N 0896FB15A0100 Page 1 of 2 Detail Specification: 11/10/2010 General Specifications 0896FB15A0100 Part Number 30 min.@1726~1856MHz 863 - 928 Frequency MHz Unbalanced Impedence

AEI25-3894

Contextual Info: RoHS Line Output Transformer AEI25-3894 Input Impedence 3 - 1 5 KOhm 4 - 2(10 KOhm) Output Impedence 4 - 2 (178 Ohm) DCR 3 - 1 (46 Ohm) 4 - 2 (164 Ohm) Turns Ratio 3 - 1 and 4 - 2 1:1 Hi Pot Test 250V MECHANICAL 714-665-1140 ALLIED COMPONENTS INTERNATIONAL

CT11020T0050J

Abstract: CT12525T0050J CT13737T0050J01 CT12525T0050J01 CT12010T0050J
Contextual Info: AT C H I G H P O W E R R E S I S T I V E P R O D U C T S Chip Terminations Style CT General Specifications • Nominal Impedence: 50 Ω Top View Resistive Area • Resistive Tolerance: ±5% Standard 2% Available . Overcoat • Operating Temp Range: -55 to +150˚C

GAAS FET AMPLIFIER f 10Mhz to 2 GHz

Abstract: MGFC41V3642 36f36
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V3642 3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+ /-0.3 R1.25 (1) 0.6+ /-0.15 2M IN The MGFC41V3642 is an internally impedence matched GaAs power FET especially designed for use in 3.6 - 4.2

TS-16949

Abstract: Talema 93C95 ISO-14001 UTM-3000-J Talema Electronic LLC
Contextual Info: ATM 25MBPS Pulse Transformer for Novacom & SEEQ PHY Interface Features • Meets ATM 25.6 PHY specifications providing compatibility with Novacom NOV25PMD6 and SEEQ 93C95 PHY interface • Impedence matching for 100 ohm UTP applications • Low profile, light weight SMD packages for high density board

transformer 1000 rev A

Abstract: transformer 1000 rev b MABACT0012
Contextual Info: 1:1 Flux Coupled Transformer Rev B MABACT0012 0.3 - 200 MHz SM-22B Features: • Surface Mount • 1:1 Impedence • CT on Secondary • Available on tape & reel 123 Description 5 4 M/A-COM’s MABACT0012 is a 1:1 RF flux coupled transformer in a low cost, surface

Indoor Antenna

Abstract: Decibel DB793SD5 antenna connector
Contextual Info: DB793SD5 S/T/N -M dB Diamond Indoor Antenna 1850-1990 MHz Model Number DB793SD5(S/T/N)-M Connector Options S: SMA T: TNC N: N-Male Impedence 50 ohms Gain 4.9 dBd (7 dBi) Beamwidth (3 dB from max.) Horizontal: 105° Vertical: 69.5° Frequency Range 1850 - 1990 MHz

Decibel

Contextual Info: DB796SPLLN-M PCS-dB Diamond Local Loop Indoor/Outdoor Antenna Single Patch, Maximum Gain Perpendicular to Backplate 1850-1990 MHz Model Number DB796SPLLN-M Termination Type N-Female Impedence 50 ohms Frequency Range Gain 1850 - 1990 MHz 6.0 dBd 8.1 dBi max.

Decibel

Abstract: DB776 Decibel omni Decibel Products Indoor Antenna PCB GSM ANTENNA
Contextual Info: DB776HP5N-Y Unity Gain, Horizontally Polarized Omni Indoor Antenna 880-960 MHz INDOOR Antenna Patterns Horizontal Vertical ELECTRICAL DATA MECHANICAL DATA Model Number DB776HP5N-Y Weight Termination Type N-Female Material Frequency Range Impedence Gain VSWR

DB796SPLLNKL

Abstract: 100MPH
Contextual Info: DB796SPLLNKL DCS-dB Diamond Local Loop Indoor/Outdoor Antenna Single Patch, Maximum Gain Perpendicular to Backplate 1710-1880 MHz DB796SPLLNKL Model Number Termination Type N-Female Impedence 50 ohms 1710 - 1880 MHz Frequency Range 5.9 dBd 8.0 dBi ± 1

QQ-S-698

Abstract: 107D 204C 213B VS-25
Contextual Info: im i VS-25 High Isolation RF Switch 50-500 MHz SP2T TYPICAL PERFORMANCE GUARANTEED MINIMUM PERFORMANCE DATA Impedence: 50 ohm s 3rd O rder Intercept Point: +40dBm min on condition Overall Frequency Range: 50 -5 0 0 M H 7 Frequency Bands in MHz: DESCRIPTION

ACML-1206H

Contextual Info: HIGH CURRENT MULTILAYER CHIP BEAD ACML-1206H Pb RoHS Compliant FEATURES: APPLICATIONS: • Multilayer monolithic structure yields high reliability • Unique terminal electrode structure ensures permissable currents • High impedence over a wide frequency range

Contextual Info: MULTILAYER FERRITE CHIP BEAD ACML-0603 Pb RoHS Compliant FEATURES: APPLICATIONS: • Multilayer monolithic structure yields high reliability • Unique terminal electrode structure ensures permissable currents • High impedence over a wide frequency range

GDZ12B-V

Abstract: GDZ3V9B-V GDZ10B-V GDZ11B-V GDZ13B-V GDZ15B-V GDZ16B-V GDZ18B-V
Contextual Info: GDZ-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Power Zener Diodes • Low Zener impedence and low leakage e3 current • Popular in Asian designs • Compact surface mount device • Ideal for automated mounting • Lead Pb -free component

5400FB15A0100

Abstract: Balun* johanson
Contextual Info: "High Frequency Ceramic Solutions" 5.4 GHz Filter Balun Combination P/N 5400FB15A0100 Page 1 of 3 Detail Specification: 04/04/12 Attenuation db Operating Temperature General Specifications Part Number Frequency (MHz) Unbalanced Impedence Balanced Impendance

MGFC41V5964

Abstract: fet 30 f 124
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V5964 5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC41V5964 is an internally impedence matched GaAs power FET especially designed for use in 5.9 - 6.4

Contextual Info: ATC HIGH POWER RESISTIVE PRODUCTS Chip Terminations Style CT1 General Specifications • Resistive Tolerance: ±5% standard, ±2% available • Operating Temp Range: -55 to +150˚C Top View Resistive Area • Nominal Impedence: 50 Ω Overcoat • Temperature Coefficient: ±150 ppm/˚C

Contextual Info: ATC HIGH POWER Surface Mount Chip Terminations RESISTIVE PRODUCTS CZ12010T0050G & CZ12010T0050G02 CZ12525T0050G Style CZ1 General Specifications • Nominal Impedence: 50 Ω • Resistive Tolerance: ±2% standard • Operating Temp Range: -55 to +150˚C • Temperature Coefficient:

Contextual Info: ATC HIGH POWER RESISTIVE PRODUCTS Leaded Chip Terminations Style LT1 L A General Specifications • Nominal Impedence: 50 Ω W • Resistive Tolerance: ±5% standard, ±2% available • Operating Temp Range: -55 to +150˚C .250 TYP. • Temperature Coefficient: ±150 ppm/˚C

LT12525T0050J

Contextual Info: ATC HIGH POWER RESISTIVE PRODUCTS Leaded Chip Terminations Style LT1 L A General Specifications • Nominal Impedence: 50 Ω W • Resistive Tolerance: ±5% standard, ±2% available • Operating Temp Range: -55 to +150˚C .250 TYP. • Temperature Coefficient: ±150 ppm/˚C