MGFC41V3642 Search Results

MGFC41V3642 Datasheets (2)

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Mitsubishi

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MGFC41V3642		Mitsubishi	3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET	Original	PDF	223.03KB	2
MGFC41V3642		Mitsubishi	3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET	Scan	PDF	91.3KB	2

MGFC41V3642 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
GAAS FET AMPLIFIER f 10Mhz to 2 GHz Abstract: MGFC41V3642 36f36 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V3642 3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+ /-0.3 R1.25 (1) 0.6+ /-0.15 2M IN The MGFC41V3642 is an internally impedence matched GaAs power FET especially designed for use in 3.6 - 4.2	Original	mgfc41v3642 50ohm item-51 30dbm +310mhz gaas fet amplifier f 10mhz to 2 ghz 36f36	PDF
Contextual Info: < C band internally matched power GaAs FET > MGFC41V3642 3.6 – 4.2 GHz BAND / 14W OUTLINE DRAWING DESCRIPTION The MGFC41V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc41v3642 -45dbc 30dbm	PDF
Contextual Info: < C band internally matched power GaAs FET > MGFC41V3642 3.6 – 4.2 GHz BAND / 14W OUTLINE DRAWING DESCRIPTION The MGFC41V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc41v3642 50ohm	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V3642 3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC41V3642 is an internally impedence matched GaAs power FET especially designed for use in 3.6 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc41v3642 50ohm item-51 30dbm +210mhz june/2004	PDF
MGFC41V3642 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V3642 3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC41V3642 is an internally impedence matched GaAs power FET especially designed for use in 3.6 - 4.2	Original	mgfc41v3642 50ohm item-51 30dbm +110mhz	PDF
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	m6sta-005va/wa/sa mf-156sta-006va/wa/sa mf-156sra-002va/wa/sa mf-622sta-004va/wa/sa +16mf-622sta-005va/wa/sa mf-622sta-006va/wa/sa mf-622sra-002va/wa/sa mf-2500sta-002va/wa 003va/wa 004va/wa c42v5964 mgf1302 transistor mgf1601 mgfc1402 m57721 m67760lc h2 marking sot-89 mmic 2sc5125 mitsubishi m57710-a m68776	PDF