IMDS Search Results

Titanium dioxide

Abstract: copper wire datasheet cas number epoxy resin datasheet IMDS copper wire composition 31.5 1344-28-1 7631-86-9 49R9
Contextual Info: IMDS Declaration Film Resistors MFR4 (1R0-49R9) Pb free terminations Component Name Ceramic Rod Mullite Weight Constituent (g) 0.036 Aluminium oxide Silicon dioxide Other oxides End Caps Steel 0.030 Iron Other metals 7439-89-6 99 1 Plating 0.001 Copper Tin

Steatite

Abstract: cas number ALUMINIUM CLADDING IMDS w22-0r1 7440 Transistor 1308 1308389 7631-86-9 Aluminium iron
Contextual Info: IMDS Declaration Wirewound Resistors W22 (0R1-2R2) Pb free terminations Component Name Ceramic Rod Steatite End Caps Iron/Nickel alloy 0.310 Resistive Element Copper/Nickel alloy Terminations Protection Material CAS Number 7631-86-9 1309-48-4 1344-28-1 Composition (%

Contextual Info: r z 7 SGS-THOMSON ^7# iMDsæiLiÊTri^sûaiies S06xxxH SCR FEATURES • It rms = 6A 200V to 800V ■ High surge current capability > V drm= DESCRIPTION The S06xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose

BC441

Abstract: BC440 BC461 BC460 BC440-BC441
Contextual Info: r Z Z SGS-THOMSON ^ 7 # BC440 BC441 IMDS^OilLKg'iriKÌOliilOgi • 6 6 1 3 MEDIUM POWER AMPLIFIER DESCRIPTION The BC440 and BC441 are silicon planar epitaxial NPN transistors in TO-39 metal case. They are in­ tended for general purpose applications, especially

12065G105AT2A

Abstract: j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with

C570X7R1H106KT000N

Abstract: 771-BLF642112 SOT467 Technical Specifications of DVB-T2 Transmitter DVB-T2 blf642,112 blf642 C570x
Contextual Info: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent

OAK TECHNOLOGY

Abstract: oti-067 OTI067 OTI-077 oak technology oti 067 cga to vga Hercules Graphics Card oak oti-067 128x48 96x64
Contextual Info: OAK T E C H N O L O G Y INC SSE P • bV E ^ M O S 0 0 0 0 1 7 5 <333 H 0 A K T —T - £ 2 .- 3 3 - if 5 " Oak Technology Inc August 1991 O T T -0 7 7 Extended High Resolution VGA Graphics Controller with 1MByte Video Memory Support DESCRIPTION The OTI-077 is a highly integrated, single chip Extended High Resolution VGA Graphics Controller compatible with

IrL 1540 N

Abstract: A114 A115 AN1955 C101 JESD22 MRF8S18120HR3 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for

303 2170 001

Abstract: ATC100B0R6BT500XT J637 MRF8S21200HR6 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 1, 11/2009 RF Power Field Effect Transistors MRF8S21200HR6 MRF8S21200HSR6 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies

MAX5886

Abstract: MAX5887 MAX5887EGK MAX5888 transistor b9n
Contextual Info: 19-2777; Rev 0; 4/03 3.3V, 14-Bit, 500Msps High Dynamic Performance DAC with Differential LVDS Inputs ♦ Single 3.3V Supply Operation ♦ Excellent SFDR and IMD Performance SFDR = 76dBc at fOUT = 30MHz to Nyquist IMD = -85dBc at fOUT = 10MHz ACLR = 72dB at fOUT = 61MHz

Valeo

Abstract: renault
Contextual Info: \ : ETOURNlE&U M. Liaison electrique| ,£TOURNEA U M. (Soumjs$ionaire) - Lei28/04/2010| 3 12 1 1 1O 9 7 8 6 4 5 3 1 2 ND I C E P I EC E PART L E V E L V U E SU I V A N T F V I E W F OL L OWI NG E TOLERANCE TOL ERANCY ±0.05 M 0 . 0 0±0 . 07 M ZONE DE MARQUAGE

LM 2822

Abstract: DV0P1960 20KW DC motor panasonic ac servo motor PANASONIC SERVO MOTOR MDMA ac servo motor encoder panasonic kw 4123 servo motor AL 85 MI 6561 RS485 cable
Contextual Info: MDMA Series Panasonic Middle Inertia Minas A Series Digital AC Servo Motors & Drivers MDMA Series Middle Inertia Motor Output Range 0.75kW, 1.0kW, 1.5kW, 2.0kW, 2.5kW, 3.0kW, 3.5kW, 4.0kW, 4.5kW, 5.0kW Middle Inertia Type Rated Speed: 2000rpm Maximum Speed: 3000rpm

ADSP-215xx

Abstract: TMS320DA250 addressing modes of adsp 21xx processors vhdl code for systolic iir filter TMS320DRE200 tms320f2812 addressing modes adsp215xx TMS320C4X ARCHITECTURE, ADDRESSING MODES TMS320DSC21 verilog code for speech recognition
Contextual Info: 2002 DSP directory Image by Mike O’Leary MARKET ANALYSIS FORECASTS DSP SALES TO TURN UPWARD IN 2002, WITH ISUPPLI PREDICTING A 4% RISE AND FORWARD CONCEPTS EXPECTING A 32% GAIN. By Robert Cravotta, Technical Editor www.ednmag.com LAST YEAR WAS A HARSH ONE for

RC0402

Abstract: MP 1008 es RC0402 yageo YAGEO RC0402 RC0402FR-0756RL RC31 RC32 surface mounted resistor RC32 RESISTOR
Contextual Info: Product specification – Sep 03, 2004 V.2 Supersedes Date of Mar. 06, 2003 DATA SHEET GENERAL PURPOSE CHIP RESISTORS RC0402 Pb Free 5%, 1% Product specification Chip Resistor Surface Mount RC SERIES 2 10 0402 (Pb Free) SCOPE This specification describes RC0402 series chip resistors with lead-free terminations made by thick film process.

RL1206 Yageo

Abstract: Yageo Rl0805 Rl0805 RL1206 "material declaration sheet" for chip resistor YNSC005 1206 footprint dimension
Contextual Info: DATA SHEET LOW OHMIC HIGH POWER CHIP RESISTORS RL-High power series Pb Free 5%, 1% Product specification – May 30, 2005 V.0 sizes 0805/1206 Product specification Chip Resistor Surface Mount RL-High power SERIES 2 7 0805/1206 (Pb Free) SCOPE This specification describes RL0805/1206 low ohmic high power chip resistors with lead-free terminations made

YC164-JR-071KL

Abstract: ARV241 YC164-JR ARV242 YC164 YC164-JR-07 ARC241 ARC242 yc164jr 235003510102L
Contextual Info: 3 DATA SHEET ARRAY CHIP RESISTORS YC/TC 164 8Pin/4R; Pb Free 5%, 1% Product specification – Mar 01, 2005 V.2 Supersedes Date of Mar. 06, 2003 sizes 4 x 0603 Product specification Chip Resistor Surface Mount YC/TC SERIES 2 8 164 (Pb Free) SCOPE This specification describes YC164 (convex) and TC164 (concave) series chip resistor arrays with lead-free

Contextual Info: B U R R -B R O W N PCM1727 n = n = n ^aeemaC— Stereo Audio DIGITAL-TO-ANALOG CONVERTER WITH PROGRAMMABLE DUAL PLL FEATURES DESCRIPTION • ACCEPTS 16-, 20-, OR 24-BIT INPUT DATA • COMPLETE STEREO DAC: Includes Digital Filter and Output Amp • DYNAMIC RANGE: 92dB

B43875

Abstract: SIEMENS b43405 B43406 B41684 epcos B43991 B43991 B43876 Epcos sikorel b41684 DDS2004 B43405
Contextual Info: SAW Components SAW filter MediaFLO Series/type: Ordering code: LR24A Date: Version: June 19, 2006 1.0  EPCOS AG 2006. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.

211M0009

Abstract: 10757056 10740375 DELPHI 4 way 15327786 fci PA6.6 gf 15
Contextual Info: A DETAIL SCALE 3:1 . 1.45 POUR INFORMATION SEULEMENT / #0.05 0.2 PRODUITS ASSOCIES A B C CLIPS FEMALE TERMINALS 8.30 2.8 SICMA 3 +0.20 8.30 0.6 ETAME/ TINNED CUSTOMER DRAWING MVL REF. DELPHI REF. FOR INFORMATION ONLY / ASSOCIATED PARTS GAMME 1 RANGE 1 NOMINAL DE L'ISOLANT

Delphi PA66

Abstract: F773110 F427600 F673110 f32760 F527600 PCC0732944
Contextual Info: ZONE DE MARQUAGE MARKING AREA A-A SECTION REFERENCE MVL/ MVL PART-N 73.5 D 2 D CLIPS RCS800 ARGENTE' SILVER RCS800 FEMALE TERMINAL 1 D 13 Y SEE DETAIL 1.55 D H 20.6 $#3.0 CODING 1 SHOWN $ 0.4 K 1.3 0.5 D K DETAIL SCALE F F527600 EMBASE 2V RCS800 V2 CODE1 2W RCS800 V2 CODE1 HEADER

mosfet j172

Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

181d . RDL, Inc., "Instruction Manual for IMD-181D Intermodulation Distortion Simulator"

Abstract: rohde LDMOS NONLINEAR Analog Devices Power Meter class A push pull power amplifier multi port circulator two Tone generator 8vsb modulator
Contextual Info: test & measurement Two-tone IMD measurement techniques Seven rules to ensure the best characterization of non-linear RF components By Keith Barkley T wo-tone testing for intermodulation distortion IMD has a long and venerable history. Since the dawn of RF engineering, it has been used to

201537A

Contextual Info: APPLICATION NOTE Intermodulation Distortion Measurements of Ferrites Introduction Intermodulation Distortion IMD measurements are used to characterize the non-linearity of RF components, including ferrite circulators and isolators. Two Continuous Wave (CW) tones (f1 and

Contextual Info: 19-2777; Rev 2; 12/03 3.3V, 14-Bit, 500Msps High Dynamic Performance DAC with Differential LVDS Inputs ♦ Single 3.3V Supply Operation ♦ Excellent SFDR and IMD Performance SFDR = 76dBc at fOUT = 30MHz to Nyquist IMD = -85dBc at fOUT = 10MHz ACLR = 72dB at fOUT = 61MHz