IM 383 IC Search Results

Contextual Info: K S lE W 5 S i ? S Temperature charaderislics S S lt t Impedance raion al lOOHi Rntaa w*tage(V) S.i 10 ID if 35 5C- S3 ZW Zw i 3 Ì f i ! 2 l*Krim a 3 « ( 3 a 3 I u s e , jO*fi3t%E5iooo/JiBi. « « i K l ' W l o S M Ö J I S T * : A fte r oaolylng rated voltage for IMO ncura at t o s t tuen resumed 18 icursi

tx 2G

Contextual Info: 1. M e c h a n ic a l D im e n s i o n s : 3. E l e c t r i c a l S p e c i f i c a t i o n s : @25°C PRI OCL: 1.115 Max cj ° V aj d PRI Q: 8 Min C w /w : â 0,035 ——I I— 0 .0 0 4 M in 0 .0 2 5 M ax- HHHHHHHHHHHHHHHHHHHH • Typ TX&RCV 1 0 0 K H z 5 0 m V

GM5ZR01200A

Abstract: 18198 GM5ZE01200A GM5ZG01200A GM5ZJ01200A GM5ZS01200A GM5ZV01200A IR sensor for 40khz EIAJ C-3
Contextual Info: No. SHARP CORPORATION DG-98Y016 TECHNICAL LITERATURE FOR Light Emitting Diode MODEL No. DATE G M 5 Z R 0 1 2 Q 0 A s e r ie s 1 3 -N o v -9 8 1. These specification sheets include m aterials protected under the copyright o f Sharp Corporation "Sharp" . Please do not reproduce or cause anyone to reproduce them without Sharp's consent

8j50

Abstract: l851 b ed date sheet
Contextual Info: A TROMPETER DRAWING AND PART NO. RE QU ES T T IT L E H NO DRAWING A D - P L Z O / C J X Q - K ! ' • ß J S ’O REV ft DRAWING NO. A S S IG N E D VERBAL DATE A S SIG N ED ZO O S'-0 9 8 2 DESCRIPTiO N OR S H IP W OR K OR D ER DATE ■ « « t b o n ic » , i n c

Contextual Info: 2 3 4 5 6 7 8 9 10 11 12 13 1 Massgebend ist nur der deutsche Text ONLY THE GERMAN LANGUAGE VERSION SHALL BE BINDING FCI Rev. Neufreigabe/ A e n d . - L i s t e -N r . Index A B ENU55U ENM70W a b •m Beschreibung fuer Produktion frei FOR PRODUCTION RELEASED

Contextual Info: 2014-01-14 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.1 BPX 38 Features: Besondere Merkmale: • Spectral range of sensitivity: typ 450 . 1120 nm • Package: Metal Can (TO-18), hermetically sealed • • • • • Spektraler Bereich der Fotoempfindlichkeit:

Contextual Info: KOA MELF RESISTORS SPEER E L E C TR O N IC S , IN C . DESCRIPTIO N OF M ELF RESISTORS • Four 4 Standard Sizes: 0805, 1406, 1206, 2309 • 1/10 Watt to 1/2 Watt Power Ratings • 0.20 Ohm to 2.2 Meg Ohm Resistance Range • Tolerances to ±0.25% and TOR to 25ppm

HX6856

Contextual Info: b3E D 4551072 0000^03 3S? • HONEYl i l ELL/ S H0N3 Honeywell S E C Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM - SO I HX6828 FEATURES OTHER RADIATIO N • Full Military Temperature Operation -55°C to 125°C Fabricated with R IC M O S Silicon on Insulator

TRANSISTOR BC 327

Abstract: h21e bc 327 complementary pair transistor BC 337 transistor AS 337 transistor BC 327 40 transistor bc 630 TRANSISTOR BC 328 BC327 transistor 327
Contextual Info: *B C 3 2 7 BC328 NP SILICON TRANSISTORS, EPITAXIAL PLANAR R A N S IS T O R S PNP S IL IC IU M , P L A N A R E P IT A X IA U X ompl. of BC 337 and BC 338 îf; Preferred device Dispositif recommandé he BC 327 and BC 328 transistors are intended fo r a ide variety o f medium power AF am plifier and switlin g application ; they are particulary useful as

RL12P35

Abstract: RL12T15 TELEFUNKEN RL4,8P15 RL12T1 ScansU9X22
Contextual Info: TELEFUNKEN Z u r B e a c h t u n g : F ü r N e u e n tw ic k lu n g e n d ü rfe n n u r d ie fettg e d ru c k te n R ö h re n ty p e n v e r w a n d t w e r d e n . D ie in K u rsiv s c h rift a u f g e f ü h rte n R ö h r e n ty p e n sin d n u r n o ch in b e s c h ra n k te r S tü c k z a h l für E rsa tz z w e c k e lie fe rb a r.

2sk2385

Abstract: PH 36A 2SK238
Contextual Info: TOSHIBA 2SK2385 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2385 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 10 ±0.3 r ^3.2 ± 0.2

schematic symbol for n channel fet

Abstract: IH5001 IH5002 rtl logic
Contextual Info: IH 5001/IH 5002: 1 -Channel D river w ith SPST FET Switch AND Gate Available GENERAL DESCRIPTION FEATURES • • • • • Gate Lead Available for Nulling Charge Injection Voltage Channel Complete—Interfaces With Most Integrated Logic Low OFF Power Dissipation, —1 mW

HVFS10000

Abstract: HVFS12500 HVFS2500 HVFS5000 HVFS7500
Contextual Info: HIGH VOLTAGE SILICON RECTIFIERS HVFS2500-20000 MULTISTAC Fast Recovery, High Current DESCR IPTIO N The HVFS M U LT IS TA C high current, high voltage silico n re c tifie r’s co nve n ie n t size and high pow er capa b ility meets the re lia b ility requirem ents of com m ercial, in dustrial and

2SC3121

Abstract: transistor C5D
Contextual Info: TOSHIBA 2SC3121 2 S C 3 1 21 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS. CO M M ON BASE + 0.5 2 .5 -1 1 3 + 0 .2 5 1 .5 - Q .l 5 TV TUNER, UHF CONVERTER APPLICATIONS. (CO M M ON BASE) I- FEATURES :

MB86022

Abstract: MB86021
Contextual Info: March 1991 Edition 1.0 FUJITSU DATA SH EET • MB86021/MB86022/MB86023 CMOS 8-Bit 4-Channel D/A Converter CM OS 8-BIT 4-CHANNEL D/A CONVERTER The MB86021 /22/23 is an 8-bit, 4-channel digital-to-analog converter that is fabri­ cated with Fujitsu CMOS technology. The data latch and output buffer circuitry

Contextual Info: TOSHIBA -CDISCRETE/OPTO> TD 9097250 TOSHIBA CDISCRETE/OPTO TOSHIBA SEMICONDUCTOR » F | ciDci 7 S S D 90D : 16371 D O lt.371 D TOSHIBA GTR MODULE MG8D6EM1 TECHNICAL DATA 'SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S RESERVED. C O R P O R A T IO N . D FUNCTION DATE CODE 04-YEAR 01 -WEEK AND COUNTRY OF ORIGIN 4.70 + 0.41 [.1 85 + .01 6]

40327

Abstract: 2N3055 40375 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178 2N6180
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 250 MHz . . . I r to 60 A . . . P r to 140 W i c • 1 A H IM . P f ■ 5 W m ax. T O -3 9 * l e * - 1 A MX. P j « 7 W m ax . (T O -» ) • 30 x 30* 30x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037

GPIS56

Abstract: gpis51 gpis52 GPIS50 KU107-02 GPIL53 gpil50 GP1S42 KU107-01 GP1S53
Contextual Info: 323- - * 3ü £ tt . T £ mm X II . [•if (mm) Ic iI f m in ( % ) (m A ) 2.67 1.5 GP1S29 0.9 GP1S30 0.9 0.6 6.25 GP1S32 1.6 0.3 1 I f V fL (V ) GP1S42 - - - - GP1 S4 4 S - - - - 0.5 2.5 20 0.5 2.3 20 GP1S51 3 GP1S52 3 il V c,J isai. I f m ax (V ) (m A )

TSC382

Abstract: AS382 TH 382
Contextual Info: 580 Pleasant Stroot Watortown. M A 02172 617 924-9200 TSC382 BCD-to-Decoder/Driver L f = 7B S • G a s T u be Driver F e a tu re s G e n e ra l D e s c rip tio n • NO A M B IG U O U S OUTPUTS The 3 8 2 decodes B C D n e w ts (1-2-4 8 code) and drives »he 10

MJ480

Abstract: 20-watt audio amplifier mj491 MJ481 20 watt audio amplifier 40-60VDC npn transistors,pnp transistors MJ490 MJ4911
Contextual Info: MJ490 SILICON MJ491 PNP SI LICON POWER TRA N SISTO R S 4 A M PERE POWER TR A N SISTO R S . . . designed for general-purpose and 5 to 20 Watt audio amplifier applications. PNP SILICO N 40-60 V O LTS 87.5 WATTS • Current-Gain—Bandwidth Product f j = 4.0 MHz (Min) @ lc = 1.0 Adc

Contextual Info: MITSUBISHI IGBT MODULES CM75DY-28H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of two IGBTs in a half-bridge configu­ ration with each transistor having

40375

Abstract: 40327 40363 2N5323 2N3265 power inverter 140w dc to ac 2N2102 2N3879 2N4036 2N5320
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 250 MHz . . . I r to 60 A . . . P r to 140 W i c • 1 A H IM . P f ■ 5 W m ax. T O -3 9 * l e * - 1 A MX. P j « 7 W m ax . (T O -» ) • 30 x 30* 30x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037

Transistor BSX 63-10

Abstract: Transistor BSX 62-16 transistor 7g Q60218-X62-B Q60218-X62-D Q60218-X63-B Q60218-X63-C bsx 30 dem 6216 BSX 39
Contextual Info: IMPN -T ransisto ren fü r I\IF-Endstufen und S ch alteran w en d u n g BSX 62 BSX 63 BSX 62 und BSX 63 sind epitaktische NPN-Siiizium-Planar-Transistoren im Gehäuse 5 C3 DIN 41 873 TO-39 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Die Transistoren