II04 Search Results

WMM 22

Contextual Info: wmm Low RV Thin Film Chip Resistors RL Series 1.0 Application Excellent performance in resistance tolerance, temperature characteristics, noise and long term sta­ bility, this low resistance value chip resistor is useful in many current sensing applications. It offers

GM76C28-10

Contextual Info: PRODUCT SPECIFICATION REV. J GM76C28 CMOS 16K-BIT STATIC RAM Pin Configuration Description The G M 7 6 C 2 8 10/12 is a 2 ,0 4 8 words X 8 bits asyn­ chronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes

IC cny75

Abstract: CNY75 optocoupler H045
Contextual Info: Tem ic CNY75 G Series S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The CNY75(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting

P4C1258

Abstract: O513
Contextual Info: PERFORMANCE SEMICONDUCTOR 7Ob2517 OOOOfc.41 fl • SOE D P4C1258/P4C1258L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAMS SCRAMS jA FEATURES ■ High Speed (Equal A ccess and C ycle Tim es) - 20/25/30/35 ns (Commercial) - 25/30/35/45/55 ns (M ilitary) ■ Three-State Outputs

Contextual Info: SAMSUNG ELECTRONICS INC b^E D H TTbMlME 0014070 EbS « S N C K KM6466A/KM6466AL CMOS SRAM 1 6 K x 4 Bit Static RAM with OE FEATURES GENERAL DESCRIPTION • Fast Access Time: 25,35,45 ns (max.) • Low Power Dissipation Standby (TTL): 30m A (max.) (CMOS): 2mA (max.)

16L8-5

Abstract: PAL16R8
Contextual Info: ADV MICRO P L A / P L E / A R R A Y S 2ÔE D G25752fci GG311Gb b AMD2 CO M 'L: -5/4 T—46—19—13 Z f Advanced Micro Devices PAL16R8-5/4 Series 5 ns TTL Programmable Array Logic DISTINCTIVE CHARACTERISTICS • 5 ns and 4.5 ns m axim um pro p a g a tio n delay

Contextual Info: Transistors Digital transistors built-in resistors | DTB123EK/DTB123ES •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Built-in bias resistors en ab le the configuration of an inverter circuit 2 .9 ± 0 .2 DTB123EK 1 1 + 0 -2 —0.1 a without connecting external input

Ii04

Contextual Info: 10 NI] 1.7 BfBD —D 1.2 SECTION D-D M F - F SECTION F-F 47.5 45 42.5 2 .1 40 37.5 35 32.5 30 27.5 S H □ 0.8 25 22.5 □ I.8 20 I7.5 -E SECTION E-E MB NOTE I2.5 I0 7.5 E N G. NO . 5 1 0 3 * APPLICABLE TERMINALsENG.NO.5 I03* 5I 48.5 46 43.5 4I 38.5 36 33.5

vfc52bp

Abstract: VFC42BP VFC42BM VFC52BM VFC42SM VFC52 VFC42 VFC52SM D2L DIODE VFC62
Contextual Info: VOLTAQE-TO-FREQUENCY AND FREQUENCY-TO-VOLTAGE CONVERTER FEA TU R ES • V/F OR F/V CONVERSION • TWO FREQUENCY RANGES 10kHz VFC42 100kHz (VFC52) • LOW NONLINEARITY ±001% M X (VFC42J ±000% m x (VFC52| • MINIMAL EXTERNAL COMPONENTS REQUIRED AM M ly mm txtanul rn itta r tar V/F aparatlM

Contextual Info: MOTOROLA SEM ICO ND U C TO R TECHNICAL DATA MCM36200 MCM36L200 2M x 36 Bit Dynamic Random Access Memory Module The MCM36200S is a 72M, dynam ic random access memory DRAM module organized as 2,097,152 x 36 bits. The module is a double-sided 72-lead single-in-line

toko rcl COIL

Abstract: CPS1102 CPS1099 CPS1103 J22696 toko cps5056b CPS1177 AXJ4 CPS1049 toko rcl
Contextual Info: CATALOÇi NOp Z -0 6 6 0 0 2 E m m \ TOKO :U: AMERICA IN C i i> !•!? ! P :•s:•!1- >¡•u uii.th 0“ 1 E i.h im: I•Ii n.11! 0 1 0 4.t3 r . . D liliililHliililjiV. . mi r.! ¡.-! i.:> , . 9067632 IuümI ii:i;!i.|;ihi-!l !:!:i n 1 DC-DC Converter Modules

Contextual Info: DASH NO - 1 - / MODEL NO J 3 1 4MBNC J3 4MBNCT VERSION UNTERMINATED TERMINATED 4. T E R M I N A T E D V E R S I O N J 3 I 4 M W T IS S U P P L I E D WITH A 7 5 0 I / 4 W , 1 1 R E S IS T O R 3. FINISH: 2. T H I S U N I T P E R F O R M S UP T O 2 . 5: G H Z W I T H R E T U R N

Chameleon

Abstract: "integrity rtos" threadx able application modules 5C46 TRACE32-POWERVIEW RS232 to TCP-IP LAN Ethernet converter lauterbach JTAG Schematics ARM interface atmel bootloader tutorial st 6210 atmel str 6853
Contextual Info: 5C46 AT91 3Party BAT.xp 7/09/05 2:49 Page 1 A R M T H U M B © M ICROCONTROLLERS AT91 Third Party Development Tools 5C46 AT91 3Party BAT.xp 7/09/05 2:49 Page 2 T Vendor A B L E Products SourcePoint Debugger ARM RealView Development Suite Ashling Source-Level Debugger

7094

Abstract: 175MC
Contextual Info: 7094 Beam Power Tube FORCED-AIR COOLED AT MAXIMUM RATINGS 500 WATTS CW INPUT IC A S UP TO 60 Me 335 WATTS CW INPUT (IC A S ) UP TO 17 5 Me GENERAL DATA E le c t r ic a l: H eater, f o r U n ip o t e n t ia l Cathode: V o )ta g e (AC o r DC) .

W24512AK-15

Contextual Info: W24010 inbond Electronics Corp. -~-l_p-w-e-_I.-I-I-P-IIII-y_ -1_-LI- .-.-mme.-.I_ I_., .-L-.~I-.-I-.III-.-~- -.a-m-m-._-_ 128K x 8 CMOS STATIC RAM GENERAL DESCRIPTION The W24010 is a normal-speed, very low-power CMOS static RAM organized as 131072 x 8 bits that

marking code a6w

Abstract: A6W 85 making code a6w iv02 A6W MARKING a6w 58
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT pPD29FOO8L 8 M-BIT CMOS 3.0 V-ONLY FLASH MEMORY 1 M-WORD BY 8-BIT BYTE MODE Description The pPD29F008L is an electrically programmable/erasable high-speed 3.0 V-only flash memory with bit configuration. It possesses an automatic single Byte program function and an automatic block erase

TRANSISTOR PNP B1443

Abstract: B1565 transistor B1274 transistor 13001 s 6d B1273 transistor B0615 DIODE Transistor B1203 transistor b1274 transistor b1134 transistor B1204
Contextual Info: Version 1.7 Produced in June 1998 Sharp Programmable Controller New Satellite JW20H Programming Manual * Ladder instruction version 04000 F — 44 O I F — 08 1 O C T 100 09000 0000 09000 F — 00 X F E R □ F — 05 D M P X F — 63 IN C 09000 09000 09000

fuji igbt

Abstract: rv3e 1MBI600S-120 H04-0C4
Contextual Info: This terfal and the Information herein Is Jh? p ro p e rly of Foj! Elecinc Co.Ltd T h e y shall be. neither reproduced, copied, lent, or disclosed in any way whatsoever fo r the use o f any third party.nor used for the manufacturing purposes w ith out the express w ritte n consent of Fuji Electric Co., Ltd.

GH17L

Abstract: cx171 GM71C17403B gm71c18163b 8011S GM71C17403 7011s gm71c18163
Contextual Info: GM7lCl6403B/BL LG Semicon Co.,Ltd. 4,194,304 WORDS x 4 BIT CbIOS DYNAMIC RAM Features Description The GM71 C 16403BIBL is the new generation d y n a m i c R A M organized 4,194,304 words x 4 b i t . GM71 C 16403B/BL h a s realized h i g h e r density, higher performance and various functions

PF3AB

Abstract: hd6370 series HD63B03XP hd63b01yop HD6303 HD63701VOP LM200 lcd HD6301 HD63B03RP L9430
Contextual Info: -, . jo,;-: ~ . .' ;~': ,-. " . :. . HD6301 iHD6303 SERIES HANDBOOK • USER'S MANUALS: o t! 1) @ HD6301 V1 IHD6303R HD63701V HD6301XO/HD6303X/HD63701XO HD6301 YO/HD6303Y IHD63701 YO III SOFTWARE APPLICATION NOTES til HARDWARE APPLICATION NOTES II C LANGUAGE PROGRAMMING TECHNIOUES