IGNITER Z 2000 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD1088 TO – 220 TRANSISTOR NPN 1. BASE FEATURES z High DC Current Gain z DARLINGTON 2. COLLECTOR 3. EMITTER APPLICATIONS z For Switching Igniter Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SD1976

Abstract: DSA003645
Contextual Info: 2SD1976 Silicon NPN Triple Diffused ADE-208-918 Z 1st. Edition Sep. 2000 Application High voltage switching, igniter Feature • Built-in High voltage zener diode (300 V) • High Speed switching Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter

2SD1113

Abstract: DSA003644
Contextual Info: 2SD1113 K Silicon NPN Triple Diffused ADE-208-903 (Z) 1st. Edition Sep. 2000 Application Igniter Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 6 kΩ (Typ) 450 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

igniter z 2000

Abstract: 2SD1410
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1410 INDUSTRIAL APPLICATIONS Unit in rr IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. 03.2±Q2 FEATURES: . High DC Current Gain : hFE=2000(Min.) (VCE=2V, Ic=2A) MAXIMUM RATINGS (Ta=25°C)

Contextual Info: TO SH IBA TOSHIBA TRANSISTOR 2SD1088 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2 S D 1 088 IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm çJ3.6 ± 0.2 ‘10.3MAX.“ / - High DC Current Gain : hpE = 2000 (Min.) (VqE = 2V, Iq = 2A)

2SD141

Abstract: 2SD1410A
Contextual Info: TO SH IBA 2SD1410A TOSHIBA TRANSISTOR 2 S SILICON NPN TRIPLE DIFFUSED TYPE D 1 4 1 O A Unit in mm IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS • r 10 ±0.3 -y 5< ÍY^ High DC Current Gain : hjpg = 2000 Min. o iV ' •nP = 2—V. •* Tn = 2 A}'

2SD1088

Abstract: igniter 2sd1088 TOSHIBA
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1088 INDUSTRIAL APPLICATIONS IGNITER APPLICATIONS. U n i t in m m HIGH VOLTAGE SWITCHING APPLICATIONS. 1U.3MAX. 5Ä 3T FEATURES: . H i g h DC C u r r e n t G a i n : h F E = 2 0 0 0 ( M i n .) MAXIMUM RATINGS

BA8B

Abstract: 2SD1361 IJ500
Contextual Info: TOSHIBA {DIS CR ET E/OPT O} Sb d¥ TQT72SD QOOTTBl T ^ T “ c r m i •■ '0 ^ T-33-29 9097250 TOSHIBA DISCRETE/O P T O ) SILICON NPN TRIPLE DIFFUSED TYPE _ (DARLINGTON POWER) INDUSTRIAL APPLICATIONS IGNITER APPLICATIONS. :HIGH VOLTAGE SWITCHING APPLICATIONS.

2SD799

Abstract: DK Q
Contextual Info: 2SD799 SILICON NPN TRIPLE DIFFUSE TYPE DARLINGTON POWER INDUSTRIAL APPLICATIONS _ Unit in mm IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES: • High DC Current Gain : hpjr=600(Min.) (V^]j=2V, Iq =2A) • Monolithic Construction with Built-In BaseEmitter Shunt Resistor.

Contextual Info: 2SD1409A TOSHIBA TO SHIBA TRANSISTOR IGNITER APPLICATIONS 2SD1409A SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0.3 • 03.2 ± 0.2 2.7± 0.2 High DC Current Gain * = 600 (Min.)

2SD1085

Abstract: RE100T
Contextual Info: 2SD1085 K Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Outline TO -220AB 2 h II I I 1 j 2 ,g 1 Base 2 Collector (Flange) 3 Emitter - V\A—I—'WV-Ì- J ki3 4 5 (Typ) 250 Cl (Typ) ¿ 3 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SD1976 Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Feature • Built-in High voltage zener diode 300 V • High Speed switching Outline TO -220AB 2SD1976 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage

Contextual Info: 2SD1976 Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Feature • Built-in High voltage zener diode 300 V • High Speed switching Outline T O -2 2 0 A B 2SD1976 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating

circuit diagram electronic choke for tube light

Abstract: Electronic ignitors for HID lamp circuits osram MZN 400 Su-lt BAG TURGI MZN 1000 S Metal Halide Lamp Ignitor BAG TURGI MZN 400 S bag turgi MZN 4000 electronic ballast for uv tube light 380 mzn 4000 OSRAM economic
Contextual Info: POWERSTAR HQI/HCI POWERBALL HCI Technical Information ● All rights reserved. No part of this document may be reproduced, copied or distributed in any form printed matter, photocopy, etc. without the written permission of HID M-M, OSRAM Germany. ● This brochure supersedes all previous editions.

Contextual Info: 2SD2323 Silicon NPN Triple Diffused H ITA C H I Application High voltage switching, igniter Features • Built-in High voltage zener diode 300 V • High speed switching Outline T O -2 2 0 F M JÜL 2 B ase 1• 12 3 2. C o lle c to r 3. E m itte r ° t Xt

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . capacit o rs lighting applications Film Ca pacito r s capabilities w w w. v i s h a y. c o m Lighting Applications Film Capacitors CFL 2 , 42 # # # # , # 42 # Electronic Ballast Europe # 6 # # 2

2SD1113

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SD1976

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SD1976

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SD1113

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Epcos

Abstract: ZKP 180 schematic diagram Electronic Ballast xenon xenon hid ballast diode ZKP epcos SURGE ARRESTERS SURGE ARRESTER spark gap varistor x72 apqp MANUAL A81-A230X
Contextual Info: Überspannungsableiter und Schaltfunkenstrecken Surge Arresters and Switching Spark Gaps Produktschrift 2000 / Product Profile 2000 http://www.epcos.com Vorwort Preview Kommunikationseinrichtungen und Systeme zur Datenübertragung können durch Überspannungen und die

vogt -sumida-5432001800

Abstract: vogt 573 10 270 20 vogt 545 vogt a3 VOGT W1 573 10 270 20 545 01 122 00 vogt VOGT K3 vogt IL 050 321 31 01 vogt 545 23 127 00 vogt transformer 545 35
Contextual Info: COMPONENTS | MODULES | CORES 2011 SUMIDA Components & Modules GmbH Dr. Hans-Vogt-Platz 1 | D-94130 Obernzell Phone: +49/85 91/937-100 Fax: +49/85 91/937-103 E-Mail: contact@sumida-eu.com Internet: www.sumida-eu.com COMPONENTS | MODULES | CORES -2- INTRODUCTION

schematic diagram Electronic Ballast xenon

Abstract: diode ZKP ZKP 180 apqp MANUAL epcos SURGE ARRESTERS A80-A230X M51-A230XSMD xenon igniter RAB0203-I circuit diagram ballast xenon
Contextual Info: Überspannungsableiter und Schaltfunkenstrecken Surge Arresters and Switching Spark Gaps Produktschrift 2000 / Product Profile 2000 http://www.epcos.com Vorwort Preview Kommunikationseinrichtungen und Systeme zur Datenübertragung können durch Überspannungen und die