BA8B Search Results

Contextual Info: Features • Single 4.5V - 5.5V Supply • Serial Interface Architecture • Page Program Operation - Single Cycle Reprogram Erase and Program - 2048 Pages (264 Bytes/Page) Main Memory • Two 264-Byte SRAM Data Buffers - Allows Receiving of Data while Reprogramming of

Contextual Info: Features • Single 2.7V - 3.6V Supply • Serial Interface Architecture • Page Program Operation - Single Cycle Reprogram Erase and Program - 1024 Pages (264 Bytes/Page) Main Memory • Two 264-Byte SRAM Data Buffers - Allows Receiving of Data while Reprogramming of Non-Volatile Memory

Contextual Info: Features • Single 4.5V - 5.5V Supply • Serial Interface Architecture • Page Program Operation - Single Cycle Reprogram Erase and Program - 512 Pages (264 Bytes/Page) Main Memory • Optional Page and Block Erase Operations • One 264-Byte SRAM Data Buffer

Contextual Info: Features • Single 4.5V - 5.5V Supply • Serial Interface Architecture • Page Program Operation - Single Cycle Reprogram Erase and Program - 2048 Pages (264 Bytes/Page) Main Memory • Two 264-Byte Data Buffers - Allows Receiving of Data while Reprogramming of

Contextual Info: pt// 8KX8 BASED Dense-Pac Microsystems, Inc. CMOS SRAM FAMILY DESCRIPTION: The Dense-Pac 8 K X 8 Based Family of Static Random Access M em ories SRAM , com plete w ith memory interface logic and on-board capacitors are available in the organizations and packages described below.

Contextual Info: Features • Single 2.7V - 3.6V Supply • Serial Interface Architecture • Page Program Operation - Single Cycle Reprogram Erase and Program - 1024 Pages (264 Bytes/Page) Main Memory • Two 264-Byte SRAM Data Buffers - Allows Receiving of Data while Reprogramming of Non-Volatile Memory

Contextual Info: DESCRIPTION: The Dense-Pac 32K X 8S family consists of CM OS +5V 32K X 8 Electrically Eraseable Programmable Read-Only Memories EEPROM s . These EEPROM modules are ideal for applications which require low power consumption, non­ volatility and in-system reprogrammability. The endurance,

AT45DB081

Abstract: AT45DB081A AT45DB081B AT45DB081B-CC AT45DB081B-RC PA10 PA11
Contextual Info: Features • Single 2.5V - 3.6V or 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible • Page Program Operation • • • • • • • • • – Single Cycle Reprogram (Erase and Program) – 4096 Pages (264 Bytes/Page) Main Memory

SCK 055

Abstract: AT45DB041 AT45DB041A AT45DB041B AT45DB041B-CC AT45DB041B-RC PA10
Contextual Info: Features • Single 2.5V - 3.6V or 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible • Page Program Operation • • • • • • • • • – Single Cycle Reprogram (Erase and Program) – 2048 Pages (264 Bytes/Page) Main Memory

BSC 68H

Abstract: AT45DB021 AT45DB021A AT45DB021B AT45DB021B-CC AT45DB021B-CI AT45DB021B-RC AT45DB021B-SC AT45DB021B-TC
Contextual Info: Features • • • • • • • • • • • • • • • 100% Compatible to AT45DB021 and AT45DB021A Single 2.7V - 3.6V Supply Serial Interface Architecture Page Program Operation – Single Cycle Reprogram Erase and Program – 1024 Pages (264 Bytes/Page) Main Memory

AT45DB081B-RU

Abstract: AT45DB081 AT45DB081A AT45DB081B AT45DB081B-CC AT45DB081B-CNC PA10 PA11
Contextual Info: Features • • • • • • • • • • • • • Single 2.5V - 3.6V or 2.7V - 3.6V Supply Serial Peripheral Interface SPI Compatible 20 MHz Max Clock Frequency Page Program Operation – Single Cycle Reprogram (Erase and Program) – 4096 Pages (264 Bytes/Page) Main Memory

AT45D011

Abstract: AT45D011-JC AT45D011-JI AT45D011-SC AT45D011-SI AT45D011-XC AT45D011-XI AT45DB011 MS-016
Contextual Info: Features • Single 4.5V - 5.5V Supply • Serial Interface Architecture • Page Program Operation • • • • • • • • • • • – Single Cycle Reprogram Erase and Program – 512 Pages (264 Bytes/Page) Main Memory Optional Page and Block Erase Operations

BSC 68H

Abstract: sck 054 DataFlash SCK 055 TSOP 28 SPI memory Package flash AT45DB041 AT45DB041A AT45DB041A-JC AT45DB041A-RC AT45DB041A-TC
Contextual Info: Features • • • • • • • • • • • • • • 100% Compatible to AT45DB041 Single 2.7V - 3.6V Supply Serial Interface Architecture Page Program Operation – Single Cycle Reprogram Erase and Program – 2048 Pages (264 Bytes/Page) Main Memory

AT45D041A-RC

Abstract: TSOP 28 SPI memory Package flash AT45D041 AT45D041A AT45D041A-JC AT45D041A-TC PA10
Contextual Info: Features • • • • • • • • • • • • • • 100% Compatible to AT45D041 Single 4.5V - 5.5V Supply Serial Interface Architecture Page Program Operation – Single Cycle Reprogram Erase and Program – 2048 Pages (264 Bytes/Page) Main Memory

Contextual Info: K0*=2<<0*:I6020$:89CF6:89C K0 0?2A50%?D>C23<6 K0$?F0?BC K0,>:E6AB2<0!>@DC0-?<C286 K0 ? *0?=@<:2>C '70#1+'30')-'.32020E00,*%#3*/.2 24C?AH0DC?=2C:?> +6<64?= 2C24?= (A:>C6AB02>50=?C?A05A:E6B !>BCAD=6>CB #(*0*6A:6B F0C?0BF.070 ?2A50%?D>C0(?F6A0*D@@<:6B

Contextual Info: Features * Single 4.5V - 5.5V Supply * Serial Interface Architecture * Page Program Operation - Single Cycle Reprogram Erase and Program - 1024 Pages (264 Bytes/Page) Main Memory * Two 264-Byte SRAM Data Buffers - Allows Receiving of Data while Reprogramming of Nonvolatile Memory

Contextual Info: Features • Single 2.7V - 3.6V Supply • Sequential Access, Parallel I/O Architecture • Page Program Operation - Single Cycle Reprogram Erase and Program - 4096 Pages (264 Bytes/Page) Main Memory • Two 264-Byte Data Buffers - Allows Receiving of Data while

Contextual Info: Features * Single 2.7V - 3.6V Supply * Serial Interface Architecture * Page Program Operation - Single Cycle Reprogram Erase and Program - 4096 Pages (264 Bytes/Page) Main Memory * Two 264-byte SRAM Data Buffers - Allows Receiving of Data while Reprogramming of

Contextual Info: Features • Single 4.5V - 5.5V Supply • Serial Interface Architecture • Page Program Operation -S in g le Cycle Reprogram Erase and Program - 4096 Pages (264 Bytes/Page) Main Memory • Two 264-Byte Data Buffers - Allows Receiving of Data while Reprogramming of

Contextual Info: Dense-Pac Microsystems, Ina D PE45128 512KX8 CMOS EEPROM MODULE O DESCRIPTION: The DPE45128 is a four Megabit Electrically Erasable and Programmable Read O nly Memory EEPROM module organized as 512K X 8 bit, consisting of sixteen 32K X 8 EEPROM 's plus complete signal and I/O

615-2H

Abstract: AT45DB080 AT45DB080-RC AT45DB080-RI AT45DB080-TC AT45DB081 PA10 PA11 AT45DB080RC
Contextual Info: Features • Single 2.7V - 3.6V Supply • Sequential Access, Parallel I/O Architecture • Page Program Operation • • • • • • • • • • – Single Cycle Reprogram Erase and Program – 4096 Pages (264 Bytes/Page) Main Memory Two 264-Byte Data Buffers – Allows Receiving of Data while

Contextual Info: Features * Single 2.7V - 3.6V Supply * Serial Interface Architecture * Page Program Operation - Single Cycle Reprogram Erase and Program - 512 Pages (264 Bytes/Page) Main Memory * Optional Page and Block Erase Operations * One 264-Byte SRAM Data Buffer * Internal Program and Control Timer

6AD5

Contextual Info: Features * Single 4.5V - 5.5V Supply * Serial Interface Architecture * Page Program Operation - Single Cycle Reprogram Erase and Program - 2048 Pages (264 Bytes/Page) Main Memory * Two 264-byte SRAM Data Buffers - Allows Receiving of Data while Reprogramming of

AT89CXX

Abstract: 0842B AT45D041 AT89S8252 MCS-51 PA10
Contextual Info: Using Atmel’s Serial DataFlash Introduction In the past, engineers have struggled to use Flash memory for data storage applications. The traditional Flash memory devices, with their large page sizes of 4K to 128K bytes, make it difficult to change a few bytes. Typically, system