IGC1 Search Results
IGC1 Datasheets (23)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IGC10000 |
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CMOS Gate Arrays | Scan | 412.34KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGC10408 |
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CMOS Gate Arrays | Scan | 412.34KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGC10408 |
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Shortform Data Book 1983/4 | Short Form | 63.54KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGC10756 |
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Shortform Data Book 1983/4 | Short Form | 63.54KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGC10756 |
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CMOS Gate Arrays | Scan | 412.34KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGC109T120T6RH |
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IGBT Chips; Technology: IGBT 4 High Power; VDS (max): 1,200.0 V; IC (max): 110.0 A; VCE(sat) (max): 2.0 V; VGE(th) (min): 5.0 V; | Original | 69.84KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGC109T120T6RL |
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IGBT Chips; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 110.0 A; VCE(sat) (max): 2.05 V; VGE(th) (min): 5.0 V; | Original | 67.79KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGC109T120T6RM |
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IGBT Chips; Technology: IGBT 4 Medium Power; VDS (max): 1,200.0 V; IC (max): 110.0 A; VCE(sat) (max): 2.05 V; VGE(th) (min): 5.0 V; | Original | 67.23KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGC10T65QEX1SA1 |
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IGBT CHIP | Original | 231.7KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGC11500 |
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Shortform Data Book 1983/4 | Short Form | 63.54KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGC11500 |
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CMOS Gate Arrays | Scan | 412.34KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGC11T120T6L |
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IGBT Chips; Package: --; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 8.0 A; VCE(sat) (max): 2.1 V; VGE(th) (min): 5.0 V; | Original | 73.45KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGC11T120T8LX1SA1 |
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Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 8A SAWN ON FOIL | Original | 305.21KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGC13T120T6L |
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IGBT Chips; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 10.0 A; VCE(sat) (max): 2.1 V; VGE(th) (min): 5.0 V; | Original | 71.98KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IGC13T120T8LX1SA1 |
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Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 10A SAWN ON FOIL | Original | 313.31KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGC142T120T6RH |
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IGBT Chips; Package: --; Technology: IGBT 4 High Power; VDS (max): 1,200.0 V; IC (max): 150.0 A; VCE(sat) (max): 2.0 V; VGE(th) (min): 5.0 V; | Original | 70.7KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGC142T120T6RL |
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IGBT Chips; Package: --; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 150.0 A; VCE(sat) (max): 2.05 V; VGE(th) (min): 5.0 V; | Original | 71.86KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGC142T120T6RM |
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IGBT Chips; Package: --; Technology: IGBT 4 Medium Power; VDS (max): 1,200.0 V; IC (max): 150.0 A; VCE(sat) (max): 2.05 V; VGE(th) (min): 5.0 V; | Original | 71.4KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGC142T120T8RLX1SA2 |
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Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 150A SAWN ON FOIL | Original | 318.68KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGC15T65QEX1SA1 |
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IGBT CHIP | Original | 97.2KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGC1 Price and Stock
CompuCablePlusUSA MINIGC-15A6DSUB GNDR CHGR DB15M/M 6PCS/PACK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MINIGC-15A6 | 1 |
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Buy Now | |||||||
CompuCablePlusUSA MINIGC-15B6DSUB GNDR CHGR DB15M/F 6PCS/PACK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MINIGC-15B6 | 1 |
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Buy Now | |||||||
CompuCablePlusUSA MINIGC-15HA6GNDR CHGR HD DB15 M/M 6PCS/PACK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MINIGC-15HA6 | 1 |
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Buy Now | |||||||
Infineon Technologies AG SIGC14T60NCX1SA6IGBT NPT 600V 15A DIE |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIGC14T60NCX1SA6 | Bulk |
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Buy Now | |||||||
Infineon Technologies AG SIGC18T60NCX7SA2IGBT NPT 600V 20A DIE |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIGC18T60NCX7SA2 | Bulk |
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Buy Now | |||||||
IGC1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IGC109T120T6RL IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives |
Original |
IGC109T120T6RL L7742C, | |
IGBT infineonContextual Info: IGC10R60D TRENCHSTOPTM RC-Series for hard switching applications IGBT chip with monolithically integrated diode in packages offering space saving advantage Features: TRENCHSTOPTM Reverse Conducting RC technology for 600V applications offering: • Optimised VCEsat and VF for low conduction losses |
Original |
IGC10R60D 20kHz IGBT infineon | |
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Contextual Info: IGC109T120T6RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC109T120T6RM 1200V 110A This chip is used for: |
Original |
IGC109T120T6RM IGC109T120T6RM L7742B, | |
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Contextual Info: IGC18T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology low switching losses positive temperature coefficient easy paralleling Qualified according to JEDEC for target applications 1 Recommended for: low / medium power modules |
Original |
IGC18T120T8L L7633V, L7633P, | |
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Contextual Info: IGC142T120T6RL IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives |
Original |
IGC142T120T6RL L7693C, | |
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Contextual Info: IGC142T120T6RH IGBT4 High Power Chip FEATURES: • 1200V Trench + Field Stop technology • low VCEsat • soft turn off • positive temperature coefficient • easy paralleling Chip Type IGC142T120T6 RH VCE ICn 1200V 150A This chip is used for: • medium / high power modules |
Original |
IGC142T120T6RH IGC142T120T6 L7693A, | |
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Contextual Info: IGC168T170S8RM IGBT3 Power Chip Features: • 1700V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE IC IGC168T170S8RM 1700V 150A This chip is used for: • power modules |
Original |
IGC168T170S8RM IGC168T170S8RM L7793O, | |
soft solder die bondingContextual Info: IGC114T170S8RM IGBT3 Power Chip Features: • 1700V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE IC IGC114T170S8RM 1700V 100A This chip is used for: • power modules |
Original |
IGC114T170S8RM IGC114T170S8RM L7783O, soft solder die bonding | |
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Contextual Info: IGC142T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench & Field stop technology low switching losses soft turn off positive temperature coefficient easy paralleling Qualified according to JEDEC for target applications Chip Type |
Original |
IGC142T120T8RM IGC142T120T8RM L7693U, L7693O, | |
IGC109T120T8RMContextual Info: IGC109T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench & Field stop technology low switching losses soft turn off positive temperature coefficient easy paralleling Qualified according to JEDEC for target applications Chip Type |
Original |
IGC109T120T8RM IGC109T120T8RM L7742U, L7742O, | |
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Contextual Info: IGC109T120T6RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC109T120T6 RM 1200V 110A This chip is used for: |
Original |
IGC109T120T6RM IGC109T120T6 L7742B, | |
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Contextual Info: IGC142T120T6RL IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives |
Original |
IGC142T120T6RL IGC142T120T6 L7693C, | |
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Contextual Info: IGC18T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology low switching losses positive temperature coefficient easy paralleling Qualified according to JEDEC for target applications 1 Recommended for: low / medium power modules |
Original |
IGC18T120T8L L7633V, L7633P, | |
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Contextual Info: IGC18T120T8Q High Speed IGBT in Trench and Fieldstop Technology Features: • 1200V Trench + Field stop technology low switching losses positive temperature coefficient easy paralleling Recommended for: discrete components C Applications: high frequency drives |
Original |
IGC18T120T8Q L7633Q, L7633S, | |
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Contextual Info: IGC15T60Q High Speed IGBT3 Chip Features: • 600V Trench & Field Stop technology high speed switching series third generation low VCE sat low EMI low turn-off losses positive temperature coefficient qualified according to JEDEC for target |
Original |
IGC15T60Q L7558C, | |
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Contextual Info: IGC19T60Q High Speed IGBT3 Chip Features: • 600V Trench & Field Stop technology high speed switching series third generation low VCE sat low EMI low turn-off losses positive temperature coefficient qualified according to JEDEC for target |
Original |
IGC19T60Q L7448C, | |
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Contextual Info: IGC193T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench & Field stop technology low switching losses soft turn off positive temperature coefficient easy paralleling Qualified according to JEDEC for target applications Chip Type |
Original |
IGC193T120T8RM IGC193T120T8RM L7713U, L7713O, | |
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Contextual Info: IGC189T120T6RL IGBT4 Low Power Chip Features: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives |
Original |
IGC189T120T6RL L7703C, | |
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Contextual Info: IGC11T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology low switching losses positive temperature coefficient easy paralleling Qualified according to JEDEC for target applications 1 Recommended for: low / medium power modules |
Original |
IGC11T120T8L L7613V, L7613P, | |
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Contextual Info: IGC142T120T6RH IGBT4 High Power Chip FEATURES: • 1200V Trench + Field Stop technology • low VCEsat • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC142T120T6RH 1200V 150A This chip is used for: • medium / high power modules |
Original |
IGC142T120T6RH IGC142T120T6RH L7693A, | |
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Contextual Info: IGC114T170S8RM IGBT3 Power Chip Features: • 1700V Trench + Field stop technology low switching losses soft turn off positive temperature coefficient easy paralleling Chip Type VCE IC IGC114T170S8RM 1700V 100A This chip is used for: power modules |
Original |
IGC114T170S8RM IGC114T170S8RM L7783O, L7783T, L7783E, | |
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Contextual Info: IGC168T170S8RH IGBT3 Power Chip Features: • 1700V Trench + Field stop technology low switching losses and saturation losses soft turn off positive temperature coefficient easy paralleling Chip Type VCE IC IGC168T170S8RH 1700V 150A This chip is used for: |
Original |
IGC168T170S8RH IGC168T170S8RH L7793N, L7793U, L7793F, | |
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Contextual Info: IGC142T120T8RL IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology low switching losses positive temperature coefficient easy paralleling Qualified according to JEDEC for target applications Recommended for: low / medium power modules |
Original |
IGC142T120T8RL L7693V, L7693P, | |
IGC13T120T8LContextual Info: IGC13T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology low switching losses positive temperature coefficient easy paralleling Qualified according to JEDEC for target applications 1 Recommended for: low / medium power modules |
Original |
IGC13T120T8L L7623V, L7623P, IGC13T120T8L | |