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    IGC1 Datasheets (23)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IGC10000
    		Intersil CMOS Gate Arrays Scan PDF 412.34KB 9
    IGC10408
    		Intersil CMOS Gate Arrays Scan PDF 412.34KB 9
    IGC10408
    		Intersil Shortform Data Book 1983/4 Short Form PDF 63.54KB 1
    IGC10756
    		Intersil Shortform Data Book 1983/4 Short Form PDF 63.54KB 1
    IGC10756
    		Intersil CMOS Gate Arrays Scan PDF 412.34KB 9
    IGC109T120T6RH
    		Infineon Technologies IGBT Chips; Technology: IGBT 4 High Power; VDS (max): 1,200.0 V; IC (max): 110.0 A; VCE(sat) (max): 2.0 V; VGE(th) (min): 5.0 V; Original PDF 69.84KB 5
    IGC109T120T6RL
    		Infineon Technologies IGBT Chips; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 110.0 A; VCE(sat) (max): 2.05 V; VGE(th) (min): 5.0 V; Original PDF 67.79KB 5
    IGC109T120T6RM
    		Infineon Technologies IGBT Chips; Technology: IGBT 4 Medium Power; VDS (max): 1,200.0 V; IC (max): 110.0 A; VCE(sat) (max): 2.05 V; VGE(th) (min): 5.0 V; Original PDF 67.23KB 5
    IGC10T65QEX1SA1
    		Infineon Technologies IGBT CHIP Original PDF 231.7KB 4
    IGC11500
    		Intersil Shortform Data Book 1983/4 Short Form PDF 63.54KB 1
    IGC11500
    		Intersil CMOS Gate Arrays Scan PDF 412.34KB 9
    IGC11T120T6L
    		Infineon Technologies IGBT Chips; Package: --; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 8.0 A; VCE(sat) (max): 2.1 V; VGE(th) (min): 5.0 V; Original PDF 73.45KB 5
    IGC11T120T8LX1SA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 8A SAWN ON FOIL Original PDF 305.21KB
    IGC13T120T6L
    		Infineon Technologies IGBT Chips; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 10.0 A; VCE(sat) (max): 2.1 V; VGE(th) (min): 5.0 V; Original PDF 71.98KB 5
    IGC13T120T8LX1SA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 10A SAWN ON FOIL Original PDF 313.31KB
    IGC142T120T6RH
    		Infineon Technologies IGBT Chips; Package: --; Technology: IGBT 4 High Power; VDS (max): 1,200.0 V; IC (max): 150.0 A; VCE(sat) (max): 2.0 V; VGE(th) (min): 5.0 V; Original PDF 70.7KB 5
    IGC142T120T6RL
    		Infineon Technologies IGBT Chips; Package: --; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 150.0 A; VCE(sat) (max): 2.05 V; VGE(th) (min): 5.0 V; Original PDF 71.86KB 5
    IGC142T120T6RM
    		Infineon Technologies IGBT Chips; Package: --; Technology: IGBT 4 Medium Power; VDS (max): 1,200.0 V; IC (max): 150.0 A; VCE(sat) (max): 2.05 V; VGE(th) (min): 5.0 V; Original PDF 71.4KB 5
    IGC142T120T8RLX1SA2
    		Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 150A SAWN ON FOIL Original PDF 318.68KB
    IGC15T65QEX1SA1
    		Infineon Technologies IGBT CHIP Original PDF 97.2KB 8
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    IGC1 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG SIGC158T120R3YX1SA1

    - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC158T120R3YX1SA1)
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    Avnet Americas SIGC158T120R3YX1SA1 Waffle Pack 24
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    Infineon Technologies AG SIGC121T120R2CSYX1SA1

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    Avnet Americas SIGC121T120R2CSYX1SA1 Waffle Pack 32
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    Infineon Technologies AG IGC15T65QEX1SA1

    - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC15T65QEX1SA1)
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    Avnet Americas IGC15T65QEX1SA1 Waffle Pack 20 Weeks 16,254
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    Vyrian IGC15T65QEX1SA1 8,343
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    Infineon Technologies AG IGC109T120T6RLX1SA2

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    Avnet Americas IGC109T120T6RLX1SA2 Waffle Pack 33
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    Infineon Technologies AG SIGC121T120R2CLX1SA5

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    Avnet Americas SIGC121T120R2CLX1SA5 Waffle Pack 972
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    EBV Elektronik SIGC121T120R2CLX1SA5 71 Weeks 1
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    Find more IGC1 price and stock on Findchips.com

    IGC1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IGC109T120T6RL IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		igc109t120t6rll7742c PDF

    IGBT infineon

    Contextual Info: IGC10R60D TRENCHSTOPTM RC-Series for hard switching applications IGBT chip with monolithically integrated diode in packages offering space saving advantage Features: TRENCHSTOPTM Reverse Conducting RC technology for 600V applications offering: • Optimised VCEsat and VF for low conduction losses


    Original     		igc10r60d20khzigbt infineon PDF

    Contextual Info: IGC109T120T6RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC109T120T6RM 1200V 110A This chip is used for:


    Original     		igc109t120t6rml7742b PDF

    Contextual Info: IGC18T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:  low / medium power modules


    Original     		igc18t120t8ll7633vl7633p PDF

    Contextual Info: IGC142T120T6RL IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		igc142t120t6rll7693c PDF

    Contextual Info: IGC142T120T6RH IGBT4 High Power Chip FEATURES: • 1200V Trench + Field Stop technology • low VCEsat • soft turn off • positive temperature coefficient • easy paralleling Chip Type IGC142T120T6 RH VCE ICn 1200V 150A This chip is used for: • medium / high power modules


    Original     		igc142t120t6rhigc142t120t6l7693a PDF

    Contextual Info: IGC168T170S8RM IGBT3 Power Chip Features: • 1700V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE IC IGC168T170S8RM 1700V 150A This chip is used for: • power modules


    Original     		igc168t170s8rml7793o PDF

    soft solder die bonding

    Contextual Info: IGC114T170S8RM IGBT3 Power Chip Features: • 1700V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE IC IGC114T170S8RM 1700V 100A This chip is used for: • power modules


    Original     		igc114t170s8rml7783osoft solder die bonding PDF

    Contextual Info: IGC142T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Chip Type


    Original     		igc142t120t8rml7693ul7693o PDF

    IGC109T120T8RM

    Contextual Info: IGC109T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Chip Type


    Original     		igc109t120t8rml7742ul7742o PDF

    Contextual Info: IGC109T120T6RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC109T120T6 RM 1200V 110A This chip is used for:


    Original     		igc109t120t6rmigc109t120t6l7742b PDF

    Contextual Info: IGC142T120T6RL IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		igc142t120t6rligc142t120t6l7693c PDF

    Contextual Info: IGC18T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:  low / medium power modules


    Original     		igc18t120t8ll7633vl7633p PDF

    Contextual Info: IGC18T120T8Q High Speed IGBT in Trench and Fieldstop Technology Features: • 1200V Trench + Field stop technology  low switching losses  positive temperature coefficient  easy paralleling Recommended for:  discrete components C Applications:  high frequency drives


    Original     		igc18t120t8ql7633ql7633s PDF

    Contextual Info: IGC15T60Q High Speed IGBT3 Chip Features: • 600V Trench & Field Stop technology  high speed switching series third generation  low VCE sat  low EMI  low turn-off losses  positive temperature coefficient  qualified according to JEDEC for target


    Original     		igc15t60ql7558c PDF

    Contextual Info: IGC19T60Q High Speed IGBT3 Chip Features: • 600V Trench & Field Stop technology  high speed switching series third generation  low VCE sat  low EMI  low turn-off losses  positive temperature coefficient  qualified according to JEDEC for target


    Original     		igc19t60ql7448c PDF

    Contextual Info: IGC193T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Chip Type


    Original     		igc193t120t8rml7713ul7713o PDF

    Contextual Info: IGC189T120T6RL IGBT4 Low Power Chip Features: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		igc189t120t6rll7703c PDF

    Contextual Info: IGC11T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:  low / medium power modules


    Original     		igc11t120t8ll7613vl7613p PDF

    Contextual Info: IGC142T120T6RH IGBT4 High Power Chip FEATURES: • 1200V Trench + Field Stop technology • low VCEsat • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC142T120T6RH 1200V 150A This chip is used for: • medium / high power modules


    Original     		igc142t120t6rhl7693a PDF

    Contextual Info: IGC114T170S8RM IGBT3 Power Chip Features: • 1700V Trench + Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling Chip Type VCE IC IGC114T170S8RM 1700V 100A This chip is used for:  power modules


    Original     		igc114t170s8rml7783ol7783tl7783e PDF

    Contextual Info: IGC168T170S8RH IGBT3 Power Chip Features: • 1700V Trench + Field stop technology  low switching losses and saturation losses  soft turn off  positive temperature coefficient  easy paralleling Chip Type VCE IC IGC168T170S8RH 1700V 150A This chip is used for:


    Original     		igc168t170s8rhl7793nl7793ul7793f PDF

    Contextual Info: IGC142T120T8RL IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Recommended for:  low / medium power modules


    Original     		igc142t120t8rll7693vl7693p PDF

    IGC13T120T8L

    Contextual Info: IGC13T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:  low / medium power modules


    Original     		igc13t120t8ll7623vl7623p PDF