IGBT MOTOROLA Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advanced Information SMARTDISCRETES Internally Clamped, N-Channel IGBT MGP20N35CL 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 350 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

GP20N

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advanced Information SMARTDISCRETES Internally Clamped, N-Cltannel IGBT MGP20N40CL 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 400 VOLTS (CLAMPED) T his Logic Level Insulated G ate Bipolar Transistor (IGBT)

MGP20N40CL

Abstract: NT 407 F TRANSISTOR TO 220 MGP20N40CL-D
Contextual Info: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

NT 407 F TRANSISTOR TO 220

Abstract: MOTOROLA TRANSISTOR T2 NT 407 F MOSFET TRANSISTOR MGP20N40CL 632 transistor motorola mosfet ignition coil NT 407 F TRANSISTOR
Contextual Info: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

NT 407 F TRANSISTOR TO 220

Abstract: NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR NT 407 F power transistor mosfet 407 MGP20N14CL MOTOROLA TRANSISTOR TO-220
Contextual Info: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

MGP20N40CL

Abstract: NT 407 F power transistor NT 407 F TRANSISTOR TO 220
Contextual Info: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

NT 407 F TRANSISTOR TO 220

Abstract: 108 motorola transistor NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR motorola mosfet 632 transistor motorola 221A-09 MOTOROLA TRANSISTOR MGP20N14CL motorola transistor ignition
Contextual Info: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview SMARTDISCRETES Internally Clamped, N-Channel IGBT MGP20N14CL 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

NT 407 F TRANSISTOR TO 220

Abstract: NT 407 F TRANSISTOR NT 407 F MOSFET TRANSISTOR NT 407 F power transistor MGP20N14CL
Contextual Info: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

NT 407 F TRANSISTOR TO 220

Abstract: NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR MGP20N35CL
Contextual Info: MOTOROLA Order this document by MGP20N35CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N35CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.8 VOLTS 350 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

MGP20N35CL

Abstract: mosfet, igbt, transistor NT 407 F TRANSISTOR TO 220
Contextual Info: MOTOROLA Order this document by MGP20N35CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N35CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.8 VOLTS 350 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

NT 407 F TRANSISTOR TO 220

Abstract: NT 407 F MOSFET TRANSISTOR motorola mosfet 108 motorola transistor motorola sps transistor motorola transistor ignition MGP20N14CL mosfet transistor NT 407 F transistor MOTOROLA TRANSISTOR 279
Contextual Info: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

200 amp 120 V igbt

Abstract: MHPM6B20A60D
Contextual Info: MOTOROLA Order this document by MHPM6B20A60D/D SEMICONDUCTOR TECHNICAL DATA MHPM6B20A60D Hybrid Power Module Motorola Preferred Device 6–Pack Integrated Power Stage This module integrates Six IGBT’s in a 3–phase IGBT inverter configuration. The output inverter utilizes advanced insulated gate bipolar transistors IGBT

motorola e6 SCHEMATIC

Abstract: MHPM6B15A120D
Contextual Info: MOTOROLA Order this document by MHPM6B15A120D/D SEMICONDUCTOR TECHNICAL DATA MHPM6B15A120D Hybrid Power Module Motorola Preferred Device 6–Pack Integrated Power Stage This module integrates Six IGBT’s in a 3–phase IGBT inverter configuration. The output inverter utilizes advanced insulated gate bipolar transistors IGBT

MHPM6B10A120D

Contextual Info: MOTOROLA Order this document by MHPM6B10A120D/D SEMICONDUCTOR TECHNICAL DATA MHPM6B10A120D Hybrid Power Module Motorola Preferred Device 6–Pack Integrated Power Stage This module integrates Six IGBT’s in a 3–phase IGBT inverter configuration. The output inverter utilizes advanced insulated gate bipolar transistors IGBT

GP20N40CL

Abstract: transistor tl 430 c
Contextual Info: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information M GP20N40CL SMARTDISCRETES In tern ally Clam ped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

ESD 141

Abstract: MGP20N63CL
Contextual Info: MOTOROLA Order this document by MGP20N63CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N63CL Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features Gate–Emitter ESD protection, Gate Collector Over–

MGP15N43CL

Abstract: NOR GATE IC
Contextual Info: MOTOROLA Order this document by MGP15N43CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP15N43CL Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features Gate–Emitter ESD protection, Gate Collector Over–

motorola transistor ignition

Abstract: MGP15N40CL
Contextual Info: MOTOROLA Order this document by MGP15N40CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP15N40CL Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features Gate–Emitter ESD protection, Gate Collector Over–

MGP15N38CL

Contextual Info: MOTOROLA Order this document by MGP15N38CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP15N38CL Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features Gate–Emitter ESD protection, Gate Collector Over–

47-6 k5 diode

Abstract: Motorola 022 6934 MHPM7B30A60B rectifier bridge 300v 30a
Contextual Info: MAXIMUM, DEVICE RATINGS continued (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit IGBT Reverse Voltage VCES 600 v Gate-Emitter Voltage. VGES +20 v [c 30 A BRAKE CIRCUIT - \ , : - - Continuous IGBT Collector Current Peak IGBT Collector Current (PW = 1.0 ms) (2)

MHPM2A400A60M

Abstract: motorola hybrid module A60M MOTOROLA Power Factor MOTOROLA Hybrid Power Module
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MHPM2A400A60WD DATA . MHPM2A4~A60M Preliminary Data %eet Hybrid Power Module IGBT Module High Current . 400 Amp, 600 Volt IGBT Half-Btidge ● Low On–Voltage, ● Excellent Shoti Circuit Capability

Contextual Info: Order this document by MC33153/D ^ MOTOROLA -M C33153 Advance Information Single IGBT G ate Driver The MC33153 is specifcally designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor

Contextual Info: MOTOROLA Order this document by MGP20N35CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N35CL SMARTDISCRETES In tern ally Clam ped, N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features Gate-Emitter ESD protection, Gate-Collector overvoltage

Contextual Info: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES In tern ally Clam ped, N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features Gate-Emitter ESD protection, Gate-Collector overvoltage