IGBT CHIP 400V 300A Search Results

4MBI300VG-120R-50

Abstract: 4MBI300VG120 4MBI300 chip Express t2 4mbi300vg 4MBI300VG-120 igbt 600V 300A
Contextual Info: / 4MBI300VG-120R-50 IGBT Modules IGBT MODULE V series 1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure

P-Channel mosfet 400v to220

Abstract: IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V
Contextual Info: APEC '99 Trench-Gate Technology for The Next Generation of MOS Power Devices IEEE, APEC Conference 1999 Eric R. Motto Sr. Application Engineer Powerex Inc. Youngwood PA USA APEC '99 Introduction 1. The Trench Gate Structure, Development History and Advantages

CM300DX-24A

Abstract: CM300DX
Contextual Info: MITSUBISHI IGBT MODULES CM300DX-24A HIGH POWER SWITCHING USE CM300DX-24A ¡IC . 300A ¡VCES . 1200V ¡Dual ¡Flatbase Type / Insulated Package /

600V 300A igbt dc to dc power supply

Abstract: CM300DX
Contextual Info: MITSUBISHI IGBT MODULES CM300DX-24A HIGH POWER SWITCHING USE CM300DX-24A ¡IC . 300A ¡VCES . 1200V ¡Dual ¡Flatbase Type / Insulated Package /

cm300dy-24a

Abstract: 300A 1200V IGBT MITSUBISHI
Contextual Info: MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE CM300DY-24A ¡IC . 300A ¡VCES . 1200V ¡Insulated Type ¡2-elements in a pack

300N60B3

Contextual Info: Advance Technical Information XPTTM 600V IGBTs GenX3TM IXXK300N60B3 IXXX300N60B3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 300A 1.6V 95ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C

Contextual Info: Advance Technical Information XPTTM 600V IGBTs GenX3TM IXXK300N60C3 IXXX300N60C3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 300A 2.0V 82ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C

Contextual Info: MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE CM300DY-24A ¡IC . 300A ¡VCES . 1200V ¡Insulated Type ¡2-elements in a pack

CM300DY-24A

Contextual Info: MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE CM300DY-24A ¡IC . 300A ¡VCES . 1200V ¡Insulated Type ¡2-elements in a pack

Contextual Info: MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE CM300DY-24A ¡IC . 300A ¡VCES . 1200V ¡Insulated Type ¡2-elements in a pack

MKP capacitor

Abstract: SKIIP APPLICATION 803GD061-3DUW
Contextual Info: SKiiP 803GD061-3DUW I. Power section 1 * SKiiP803GB061CT per phase Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC T heat sink = 25 70) °C Inverse diode IF T heat sink = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin

SKiiP613GB061CT

Abstract: skIIP613GB 613GD061-3DUL
Contextual Info: SKiiP 613GD061-3DUL I. Power section 1 * SKiiP613GB061CT per phase Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC T heat sink = 25 70) °C Inverse diode IF T heat sink = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

Contextual Info: VCES = 600V IC25 = 400A VCE sat ≤ 1.25V IXGN400N60A3 GenX3TM 600V IGBT Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXGN400N60A3

Contextual Info: IXGN400N60A3 GenX3TM 600V IGBT VCES = 600V IC25 = 400A VCE sat ≤ 1.25V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IGBT chip 400V 300A

Contextual Info: Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 CM300DC-24NFM Dual IGBT NFM-Series Module 300 Amperes/1200 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load 101

semikron skiip 32

Abstract: semikron skiip 400 gb 302GD061-359CTV
Contextual Info: SKiiP 302GD061-359CTV I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms

Contextual Info: Advance Technical Information XPTTM 650V IGBT GenX4TM MMIX1X340N65B4 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = = IC90 VCE sat  tfi(typ) = 650V 295A 1.7V 80ns C G E ymbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M

Contextual Info: Preliminary Technical Information XPTTM 650V IGBT GenX4TM IXXK200N65B4 IXXX200N65B4 VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 10-30kHz Switching 650V 200A 1.7V 80ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C

453gb12e4s

Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
Contextual Info: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1

Contextual Info: Advance Technical Information 600V XPTTM IGBT GenX3TM IXXH150N60C3 VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M

Contextual Info: Preliminary Technical Information 600V XPTTM IGBT GenX3TM IXYN150N60B3 Extreme Light Punch through IGBT for 10-30kHz Switching VCES = IC110 = VCE sat  tfi(typ) = E SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M

SCS205KG

Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
Contextual Info: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.

zener DIODE A112

Abstract: DC Motor control IGBT FUJI ELECTRIC ipm 7mbp75ra120 IGBT DRIVE 500V 300A 7MBP50RA120 application note 7MBP50RA06001 overcurrent circuit protection shock fuji ipm calculation of IGBT snubber TLP521-1GR
Contextual Info: FUJI POWER SEMICONDUCTORS IGBT-IPM R-SERIES APPLICATION MANUAL 1 REH983 CONTENTS Chapter 1 Features 1.1 IGBT-IPM Characteristics. 3 1.2 R-IPM Characteristics. 4