IGBT 6500 V Search Results

169800

Abstract: 12M6501
Contextual Info: Data Sheet, Doc. No. 5SYA 1698-00 12 08 5SMY 12M6501 IGBT-Die VCE = 6500 V IC = 31 A Ultra low loss IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage

GT 1081

Abstract: MAS 10 RCD IGBT GT 1081 igbt 3 KA transistor GT 1081 T1791 rcd 103 35d56 DS30 GS11
Contextual Info: Click on outline no. IGBT and GCT - Freewheeling Diodes Type V DRM V D 1031 SH D 1331 SH D 1641 SX D 1181 SX D 1441 SX D 931 SH D 1131 SH *) 4500 4500 4500 6000 6000 6500 6500 estimate failure rate λ ~ 100 fit V(D)D *) I(FSM) ∫i2dt V(F)/I(FM) kV kA A²s

Contextual Info: MIO 600-65E11 Advanced Technical Information IC80 = 600 A = 6500 V VCES VCE sat typ. = 4.2 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C' C C C 5 7 9 E E E 4 6 8 3 G 2 E' 1 Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings

kuka

Abstract: ECONOPACK
Contextual Info: kuka-2003-inhalt.qxd 17.04.2003 IGBT 10:33 Uhr Seite 6 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 6 Overview IGBT’s 2500 V 3300 V 6500 V IHV P [kW] P. 17 1200 V 1600 V 1700 V IHM P. 15 600 V 62 mm 1200 V 1700 V P. 10 600 V 1200 V 1700 V

resistor 2200 ohm

Contextual Info: MIO 600-65E11 IC80 = 600 A = 6500 V VCES VCE sat typ = 4.2 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C' C C C 5 7 9 E E E 4 6 8 3 G 2 E' 1 Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES IC85 TC = 85°C ICM

g0547

Contextual Info: MIO 600-65E11 IC80 = 600 A = 6500 V VCES VCE sat typ = 4.2 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C' C C C 5 7 9 E E E 4 6 8 3 G 2 E' 1 Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES IC85 TC = 85°C ICM

Contextual Info: MIO 600-65E11 IC80 = 600 A VCES = 6500 V VCE sat typ = 4.2 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C' C C C 5 7 9 E E E 4 6 8 3 G 2 E' 1 Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES IC85 TC = 85°C ICM

Econo PIM

Abstract: a1020 Econo SCR 600 911 DIODE Igbt 1200 1200
Contextual Info: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 4 Overview IGBT’s 2500 V 3300 V 6500 V IHV P [kW] P. 7-8 1200 V 1600 V 1700 V IHM P. 5-6 600 V 62 mm 1200 V 1700 V P. 9-11 600 V 1200 V 1700 V 34 mm P. 9-11 1200 V 1700 V Econo PACK+

Contextual Info: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 Doc. No. 5SYA1558-02 Jan 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability

5SYA2039

Contextual Info: Data Sheet, Doc. No. 5SYA 1413-02 04-2012 5SNA 0500J650300 ABB HiPakTM IGBT Module VCE = 6500 V IC = 500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability

Contextual Info: Data Sheet, Doc. No. 5SYA 1413-02 04-2012 5SNA 0500J650300 HiPak IGBT Module VCE = 6500 V IC = 500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability

IGBT 6500 V

Contextual Info: VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6500 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-02 July 07 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide

12M6501

Contextual Info: VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6501 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-03 11 11 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide

Contextual Info: Data Sheet, Doc. No. 5SYA 1413-01 07-2011 5SNA 0500J650300 ABB HiPakTM IGBT Module VCE = 6500 V IC = 500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability

5SNA

Abstract: IGBT 6500 IC da 5SNA0750G650300
Contextual Info: VCE IC = = 6500 V 750 A ABB HiPakTM IGBT Module 5SNA 0750G650300 PRELIMINARY Doc. No. 5SYA 1600-00 Apr 08 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • High insulation package • AlSiC base-plate for high power

5SNA0600G650100

Contextual Info: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 Doc. No. 5SYA1558-03 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability AlN substrate for low thermal

5SNA0750G650300

Contextual Info: VCE IC = = 6500 V 750 A ABB HiPakTM IGBT Module 5SNA 0750G650300 Doc. No. 5SYA 1600-01 Feb 09 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability

5SMX 12M6500

Abstract: 5SMX
Contextual Info: VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6500 PRELIMINARY Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-00 Mrz.05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide

fus20

Abstract: abb hipak 5SYA2039 igbt 3 KA c2120 c1840 5SNA0400J650100
Contextual Info: VCE IC = = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 Doc. No. 5SYA 1592-01 Jun 07 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability

IGBT abb

Abstract: 12M6500 5SMX 12M6500 5SLX12M6500 5SMX12M6500
Contextual Info: VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6500 PRELIMINARY Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-01 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide

Contextual Info: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 PRELIMINARY Doc. No. 5SYA 1558-01 May 05 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability

D-T2500

Abstract: 5SNA0400J650100
Contextual Info: VCE IC = = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 Doc. No. 5SYA 1592-02 Jan 09 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability

Contextual Info: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 PRELIMINARY Doc. No. 5SYA 1558-00 Feb. 05 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • High power density • AlSiC base-plate for high power

Contextual Info: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 PRELIMINARY Doc. No. 5SYA 1558-00 Jan. 05 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • High power density • AlSiC base-plate for high power