IGBT 6500 V Search Results

169800

Abstract: 12M6501
Contextual Info: Data Sheet, Doc. No. 5SYA 1698-00 12 08 5SMY 12M6501 IGBT-Die VCE = 6500 V IC = 31 A Ultra low loss IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage

Contextual Info: MIO 600-65E11 Advanced Technical Information IC80 = 600 A = 6500 V VCES VCE sat typ. = 4.2 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C' C C C 5 7 9 E E E 4 6 8 3 G 2 E' 1 Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings

resistor 2200 ohm

Contextual Info: MIO 600-65E11 IC80 = 600 A = 6500 V VCES VCE sat typ = 4.2 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C' C C C 5 7 9 E E E 4 6 8 3 G 2 E' 1 Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES IC85 TC = 85°C ICM

g0547

Contextual Info: MIO 600-65E11 IC80 = 600 A = 6500 V VCES VCE sat typ = 4.2 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C' C C C 5 7 9 E E E 4 6 8 3 G 2 E' 1 Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES IC85 TC = 85°C ICM

Contextual Info: MIO 600-65E11 IC80 = 600 A VCES = 6500 V VCE sat typ = 4.2 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C' C C C 5 7 9 E E E 4 6 8 3 G 2 E' 1 Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES IC85 TC = 85°C ICM

Econo PIM

Abstract: a1020 Econo SCR 600 911 DIODE Igbt 1200 1200
Contextual Info: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 4 Overview IGBT’s 2500 V 3300 V 6500 V IHV P [kW] P. 7-8 1200 V 1600 V 1700 V IHM P. 5-6 600 V 62 mm 1200 V 1700 V P. 9-11 600 V 1200 V 1700 V 34 mm P. 9-11 1200 V 1700 V Econo PACK+

Contextual Info: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 Doc. No. 5SYA1558-02 Jan 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability

5SYA2039

Contextual Info: Data Sheet, Doc. No. 5SYA 1413-02 04-2012 5SNA 0500J650300 ABB HiPakTM IGBT Module VCE = 6500 V IC = 500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability

Contextual Info: Data Sheet, Doc. No. 5SYA 1413-02 04-2012 5SNA 0500J650300 HiPak IGBT Module VCE = 6500 V IC = 500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability

IGBT 6500 V

Contextual Info: VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6500 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-02 July 07 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide

12M6501

Contextual Info: VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6501 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-03 11 11 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide

5SYA2042

Abstract: 5SNA0400J650100
Contextual Info: VCE IC = = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 Doc. No. 5SYA 1592-03 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability AlN substrate for low thermal

5SNA

Abstract: IGBT 6500 IC da 5SNA0750G650300
Contextual Info: VCE IC = = 6500 V 750 A ABB HiPakTM IGBT Module 5SNA 0750G650300 PRELIMINARY Doc. No. 5SYA 1600-00 Apr 08 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • High insulation package • AlSiC base-plate for high power

5SNA0600G650100

Contextual Info: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 Doc. No. 5SYA1558-03 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability AlN substrate for low thermal

fus20

Abstract: abb hipak 5SYA2039 igbt 3 KA c2120 c1840 5SNA0400J650100
Contextual Info: VCE IC = = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 Doc. No. 5SYA 1592-01 Jun 07 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability

IGBT abb

Abstract: 12M6500 5SMX 12M6500 5SLX12M6500 5SMX12M6500
Contextual Info: VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6500 PRELIMINARY Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-01 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide

Contextual Info: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 PRELIMINARY Doc. No. 5SYA 1558-01 May 05 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability

D-T2500

Abstract: 5SNA0400J650100
Contextual Info: VCE IC = = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 Doc. No. 5SYA 1592-02 Jan 09 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability

Contextual Info: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 PRELIMINARY Doc. No. 5SYA 1558-00 Feb. 05 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • High power density • AlSiC base-plate for high power

5SNA0750G650300

Contextual Info: VCE IC = = 6500 V 750 A ABB HiPakTM IGBT Module 5SNA 0750G650300 Doc. No. 5SYA 1600-02 04-2012 Ultra low-loss, rugged SPT + chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability AlN substrate for low thermal

5SYA2042

Abstract: 5SYA2043 5SNA-1500E330300 5SNA IGBT 6500 V diode 6.5 kv 5SZK9120 5SNA 1200E330100 5SNE 0800M170100
Contextual Info: HiPak IGBT Modules with SPT & SPT + chips Setting new standards for SOA The HiPak™ modules are a family of highpower IGBTs in industry standard housings using the popular 190 x 140 mm, 130 x 140 mm and 140 x 70 mm footprints. They are available in three standard isolation voltages 4, 6 and

FZ750R65KE3

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ750R65KE3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe

FD500R65KE3-K

Abstract: IRF 930 FD500R65 FD500R
Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FD500R65KE3-K hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Chopper-Anwendungen • Mittelspannungsantriebe

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FD250R65KE3-K hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 250A / ICRM = 500A TypischeAnwendungen • Mittelspannungsantriebe