IGBT 400V 100KHZ 30A Search Results

mosfet 600V 30A

Abstract: IGBT 400V 100KHZ 30A APT30GS60BRDQ2 MIC4452 MOSFET 40A 600V
Contextual Info: APT30GS60BRDQ2 G APT30GS60SRDQ2(G) 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low

Contextual Info: APT30GS60BRDL G 600V, 30A, VCE(ON) = 2.8V Typical Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower

Contextual Info: APT20GS60KR G 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for signi cantly lower turn-on energy Eoff. The low

IGBT 400V 100KHZ 30A

Abstract: MIC4452
Contextual Info: APT30GS60KR G 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low

MOSFET welding INVERTER 200A

Abstract: Mosfet 30A 300V APT30GS60BRDL MIC4452 single phase igbt based WELDING inverter 200 amps SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A
Contextual Info: APT30GS60BRDL G 600V, 30A, VCE(ON) = 2.8V Typical Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower

Contextual Info: APT30GS60BRDL G 600V, 30A, VCE(ON) = 2.8V Typical Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower

600v 20a IGBT driver

Abstract: APT20GS60KR MIC4452 motor driver full bridge 20A
Contextual Info: APT20GS60KR G 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low

inverter 12v to 220 ac mosfet based

Contextual Info: APT30GS60KR G 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for signi cantly lower turn-on energy Eoff. The low

Contextual Info: APT30GS60BRDL G 600V, 30A, VCE(ON) = 2.8V Typical Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower

Infineon diffusion solder

Abstract: Infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400V 5A IDV06S60C diode 400V 4A IDW16G65C5 idv02s60c schottky 400v
Contextual Info: 600/650V Silicon Carbide thinQ! Diodes Selection Guide Your way is our way: improve efficiency and solution costs thinQ!™ Silicon Carbide Schottky diodes: more than 10 years experience into Generation 5 650V Advantages of Silicon Carbide over Silicon devices

Contextual Info: APT30GS60BRDQ2 G APT30GS60SRDQ2(G) 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low

Contextual Info: APT30GS60BRDQ2 G APT30GS60SRDQ2(G) 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low

APT30GT60BRG

Abstract: APT30GT60BR
Contextual Info: APT30GT60BR G 600V TYPICAL PERFORMANCE CURVES APT30GT60BR APT30GT60BRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast

APT30GT60BRG

Abstract: APT30GT60BR diode 5.9
Contextual Info: TYPICAL PERFORMANCE CURVES APT30GT60BR G 600V APT30GT60BR APT30GT60BRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast

apt30gt60br

Contextual Info: TYPICAL PERFORMANCE CURVES APT30GT60BR G 600V APT30GT60BR APT30GT60BRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast

3006P

Abstract: STTA3006PI F60A150 MOSFET 1200v 30a STTA3006P stta 50 a diode 600v high transistor MN 1510 g
Contextual Info: STTA3006P I  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 30A VRRM 600V trr (typ) 35ns VF (max) 1.5V K A IF(AV) FEATURES AND BENEFITS A A SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode. ULTRA-FAST RECOVERY.

APT30GT60KR

Abstract: APT30GT60KRG
Contextual Info: TYPICAL PERFORMANCE CURVES APT30GT60KR G 600V APT30GT60KR APT30GT60KRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO-220 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast

L60A

Abstract: MOSFET 1200v 30a 400v philips
Contextual Info: STTA6006T V 1/2  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) 2*30A VRRM 600V trr (typ) 35ns VF (max) K2 A2 K1 A1 STTA6006T(V)1 1.5V A2 K1 K2 A1 STTA6006T(V)2 FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode

APT30GT60BRDQ2G

Abstract: APT30GT60BRDQ2 APT6017LLL
Contextual Info: APT30GT60BRDQ2 G 600V TYPICAL PERFORMANCE CURVES APT30GT60BRDQ2 APT30GT60BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast

APT30GT60BRDQ2

Abstract: APT30GT60BRDQ2G APT6017LLL JESD24
Contextual Info: TYPICAL PERFORMANCE CURVES APT30GT60BRDQ2 G 600V APT30GT60BRDQ2 APT30GT60BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast

Contextual Info: TYPICAL PERFORMANCE CURVES APT30GT60BRDQ2 G 600V APT30GT60BRDQ2 APT30GT60BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast

Contextual Info: APT30GT60BRDQ2 G 600V TYPICAL PERFORMANCE CURVES APT30GT60BRDQ2 APT30GT60BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast

G10T60

Contextual Info: TRENCHSTOP Series IGB10N60T p Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for frequency inverters for washing machines, fans, pumps and vacuum

G10T60

Contextual Info: TRENCHSTOP Series IGP10N60T q Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Variable Speed Drive for washing machines and air conditioners