IGBT 300V 50A Search Results

igbt 200v 30a

Abstract: FGPF50N30T FGPF50N30TTU
Contextual Info: FGPF50N30T tm 300V, 50A PDP IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

igbt 300v data sheet

Abstract: igbt 300V 10A datasheet FGA120N30D
Contextual Info: FGA120N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA120N30D provides low conduction and switching loss. FGA120N30D offers the optimum solution for PDP applications where low condution loss is essential.

fga120n30d

Contextual Info: FGA120N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA120N30D provides low conduction and switching loss. FGA120N30D offers the optimum solution for PDP applications where low condution loss is essential.

FGA120N30D

Contextual Info: FGA120N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA120N30D provides low conduction and switching loss. FGA120N30D offers the optimum solution for PDP applications where low condution loss is essential.

T T 2190

Abstract: FGPF120N30 FGPF120N30TU C120A
Contextual Info: FGPF120N30 300V, 120A PDP IGBT Features General Description • • • • Employing Unified IGBT Technology, Fairchild's PWD series of IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where

120N30

Contextual Info: FGPF120N30 300V, 120A PDP IGBT Features General Description • • • • Employing Unified IGBT Technology, Fairchild's PWD series of IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where

Contextual Info: FGPF50N30T tm 300V, 50A PDP IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.4V @ IC = 30A • High input impedance Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

FFH30US30S

Abstract: FGH50N3 LD26 TA49485
Contextual Info: FGH50N3 300V, PT N-Channel IGBT General Description Features The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction

Contextual Info: FGH50N3 300V, PT N-Channel IGBT General Description Features The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction

200N30PB

Abstract: 200n30
Contextual Info: Preliminary Technical Information GenX3TM 300V IGBT VCES = IC110 = VCE sat ≤ tfi(typ) = IXGH100N30B3 Medium speed low Vsat PT IGBTs for 10-50 kHz switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

200N30PB

Abstract: IXGH100N30B3 200n3 200n30
Contextual Info: Preliminary Technical Information GenX3TM 300V IGBT VCES = IC110 = VCE sat ≤ tfi(typ) = IXGH100N30B3 Medium speed low Vsat PT IGBTs for 10-50 kHz switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: Preliminary Technical Information GenX3TM 300V IGBT IXGH100N30C3 VCES IC110 VCE sat tfi typ High Speed PT IGBTs for 50-150kHz switching Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V VGES Continuous

IXGH100N30C3

Abstract: 100N30 100N30C3
Contextual Info: Preliminary Technical Information GenX3TM 300V IGBT IXGH100N30C3 VCES IC110 VCE sat tfi typ High Speed PT IGBTs for 50-150kHz switching Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V VGES Continuous

1MBK50D-060S

Abstract: IC100 1MBK50D060S
Contextual Info: 1MBK50D-060S Molded IGBT 600V / 50A Molded Package Features • Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness RBSOA, SCSOA etc. · Comprehensive line-up Applications · Inverter for Motor drive

Contextual Info: 1MBH50D-060S Molded IGBT 600V / 50A Molded Package Features • Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness RBSOA, SCSOA etc. · Comprehensive line-up Applications · Inverter for Motor drive

1MBH50D-060S

Abstract: 1MBH50D060S IC100 IGBT 1MBH50D-060S
Contextual Info: 1MBH50D-060S Molded IGBT 600V / 50A Molded Package Features • Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness RBSOA, SCSOA etc. · Comprehensive line-up Applications · Inverter for Motor drive

1MBH50D-060 equivalent

Abstract: IGBT 1MBH50-060
Contextual Info: 1MBH50-060,1MBH50D-060, Molded IGBT 600V / 50A Molded Package Features • Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness RBSOA, SCSOA etc. · Comprehensive line-up Applications

1MBH50D-060

Abstract: 1MBH50D060 1MBH50-060 power igbt RG-62 IC100 1mbh50d IGBT 1MBH50-060
Contextual Info: 1MBH50-060,1MBH50D-060, Molded IGBT 600V / 50A Molded Package Features • Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness RBSOA, SCSOA etc. · Comprehensive line-up Applications

Contextual Info: 7MBR50SA060 IGBT Modules IGBT MODULE S series 600V / 50A / PIM Features • Low VCE(sat) · Compact package · P.C. board mount · Converter diode bridge, Dynamic brake circuit Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply

7MBR50SA060

Abstract: DC 300V to 15V converter forward converter 12v to 300V sine wave power inverter schematic DC converter 50A 7MBR50SA-060
Contextual Info: 7MBR50SA060 IGBT Modules IGBT MODULE S series 600V / 50A / PIM Features • Low VCE(sat) · Compact package · P.C. board mount · Converter diode bridge, Dynamic brake circuit Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply

Contextual Info: 7MBR50SB060 IGBT Modules IGBT MODULE S series 600V / 50A / PIM Features • Low VCE(sat) · Compact package · P.C. board mount · Converter diode bridge, Dynamic brake circuit Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply

7MBR50U2A060

Contextual Info: 7MBR50U2A060 IGBT Modules IGBT MODULE U series 600V / 50A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier

7MBR50SB060

Contextual Info: 7MBR50SB060 IGBT Modules IGBT MODULE S series 600V / 50A / PIM Features • Low VCE(sat) · Compact package · P.C. board mount · Converter diode bridge, Dynamic brake circuit Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply

300V switching thyristor

Abstract: THYRISTOR 1A 300V thyristor 12V it 1A thyristor inverter THYRISTOR 30A 300V DM800
Contextual Info: 7MBR50SC060 IGBT Modules PIM/Built-in converter with thyristor and brake S series 600V / 50A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive