IGBT 1000V 60A Search Results

Contextual Info: FGA50N100BNTD2 1000 V NPT Trench IGBT Features General Description • • • • • Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and

Contextual Info: FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features General Description • High Speed Switching Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and

Contextual Info: FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features General Description • High Speed Switching Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and

Contextual Info: FGA50N100BNTD 1000 V NPT Trench IGBT General Description Features Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers

FGA50N100BNTD2

Abstract: IGBT welder circuit
Contextual Info: FGA50N100BNTD2 1000 V NPT Trench IGBT Features General Description • • • • • Using Fairchild 's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and

4050 cmos

Abstract: 4011 cmos 4011 c-mos ic cmos 4011 IC 4011 CMOS 4081 logic gate circuit diagram 47k ohm potentiometer Pin Diagram of ic 4081 LM311V 2N2222A npn transistor
Contextual Info: LRGAT75F100 1000V 75A LRGAT150F100 1000V 150A ZVS THYRISTOR DUAL MODE IGBT HALF BRIDGE POWER MODULE PRODUCT DESCRIPTION The LRGAT series consists of half bridges designed to be used in Zero Voltage Switching ZVS power converters up to 80KHz operating frequency and 10KW output power.

RG 2006 10A 600V

Abstract: ups active power easy 600 igbt 1000v 10A FGA50N100BN
Contextual Info: FGA50N100BNTD 1000 V NPT Trench IGBT General Description Features Using Fairchild 's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers

541 transistor

Abstract: LM311V
Contextual Info: LRGAT75F100 1000V 75A ADVANCED R ow er LRGAT150F100 1000V 150A T e c h n o l o g y ZVSTHYRISTOR DUAL MODE IGBT HALF BRIDGE POWER MODULE PRODUCT DESCRIPTION The LRGAT series consists of half bridges designed to be used in Zero Voltage Switching ZVS power

DIODE B12 51

Abstract: TSG60N100CE IGBT 1000V .200A tsg60n100 B12 68 diode IGBT 1000V 60A
Contextual Info: TSG60N100CE N-Channel IGBT with FRD. TO-264 Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1000 ±20 60 General Description The TSG60N100CE using proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers

Contextual Info: FGA50N100BNT tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche

induction heater

Abstract: FGA50N100BNT FGA50N100BNTTU fairchild induction heater low frequency induction heater igbt 1000v 10A 30 kw induction heater
Contextual Info: FGA50N100BNT tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche

igbt 1000v 10A

Contextual Info: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche

igbt induction cooker

Abstract: induction heating cooker FGA50N100BNTD2 induction cooker circuit with IGBT induction cooker application notes induction cooker fairchild induction cooker fairchild induction heater induction cooker component induction heater
Contextual Info: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche

igbt induction cooker

Abstract: FGA50N100 "induction cooker" circuit induction cooker circuit with IGBT induction heating cooker IC for induction cooker FGA50N100BNTDTU IGBT 600V 30A TO-3P IGBT 1000V 60A BNTD
Contextual Info: FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for

induction cooker application notes

Contextual Info: tm FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for

fairchild induction cooker

Abstract: induction cooker circuit with IGBT igbt induction cooker FGA50N100BNTD FGA50N100BNTDTU igbt 1000v 30a induction cooker IC for induction cooker FGA50N100BN
Contextual Info: FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

MG75J2YS40

Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
Contextual Info: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

cm150dy-34a

Abstract: diode IN 34A
Contextual Info: MITSUBISHI IGBT MODULES CM150DY-34A HIGH POWER SWITCHING USE CM150DY-34A ¡IC . 150A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack

CM150DY-34A

Abstract: IGBT 60A 1700v
Contextual Info: MITSUBISHI IGBT MODULES CM150DY-34A HIGH POWER SWITCHING USE CM150DY-34A ¡IC . 150A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack

CM150DU-34KA

Contextual Info: MITSUBISHI IGBT MODULES CM150DU-34KA HIGH POWER SWITCHING USE CM150DU-34KA ● IC . 150A ● VCES . 1700V ● Insulated Type ● 2-elements in a pack

Contextual Info: MITSUBISHI IGBT MODULES CM150DU-34KA HIGH POWER SWITCHING USE No t fo R r N ec ew om De me sig nd n CM150DU-34KA ● IC . 150A ● VCES . 1700V

CM150DU-34KA

Contextual Info: MITSUBISHI IGBT MODULES CM150DU-34KA HIGH POWER SWITCHING USE CM150DU-34KA ● IC . 150A ● VCES . 1700V ● Insulated Type ● 2-elements in a pack

Contextual Info: MITSUBISHI IGBT MODULES CM150DU-34KA HIGH POWER SWITCHING USE No t fo R r N ec ew om De me sig nd n CM150DU-34KA ● IC . 150A ● VCES . 1700V