IGBT 0N Search Results

DC 300V to 15V converter

Abstract: igbt 600v 20a MIG20J805H n channel 600v 20a IGBT toshiba a 200 inverter P channel 600v 20a IGBT
Contextual Info: TOSHIBA MIG20J805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • Integrates Inverter, Converter Power Circuits in One Package. Output Inverter Stage : Z<j> 20A/600V IGBT

silicon thermal grease g747

Abstract: shin-etsu g747 MBL800E33E G747 shinetsu IGBT 3300V
Contextual Info: IGBT MODULE 1 Spec.No.IGBT-SP-08038 R0 MBL800E33E Silicon N-channel IGBT 3300V E version 1. FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.

hexfred

Contextual Info: International Rectifier I«R PD -5.051 B PRELIMINARY "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK GA400TD25S Standard Speed IGBT Features • Generation 4 IGBT technology V ces = 250V • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz

MBN1800E17D

Abstract: IC1 723 DTT11
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-04023 R1 P1 MBN1800E17DD TARGET SPECIFICATION Silicon N-channel IGBT 1. FEATURES ∗ High speed, low loss IGBT module due to LiPT Trench Technology ∗ Low noise due to ultra soft fast recovery diode. U-SFD ∗ High reverse recovery capability (HiRC)

Contextual Info: APT30GT60KR A dvanced R ow er Te c h n o lo g y 6oov 55A Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.

V056

Abstract: MBL400E33D MBL400e33 MBL400 52CT Diode T3 61 RG103 V05-6 diode v05 hitachi
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-06008 R4 P1/7 MBL400E33D Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70 ,N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).

MG100J2YS40

Abstract: FAp DARLINGTON TRANSISTOR TOSHIBA IGBT snubber ap 5331 application POWER MOSFET HIG VELOCITY calculation of IGBT snubber P-Channel IGBT TRANSISTOR EN SMD TZ FAp DARLINGTON SMD TRANSISTOR
Contextual Info: TOSHIBA 2. [ 5 ] IGBT Description IGBT Construction 2.1 Chip Construction IGBT Insulated G ate B ipolar T ransistors are devices which combine the high in p u t im pedance and high speed of th e M OSFET w ith the high conductivity characteristics (low sa tu ratio n

MBM1200E17D

Contextual Info: Spec.No.IGBT-SP-05003 R7 P1/9 Dual IGBT Module MBM1200E17D Silicon N-channel IGBT OUTLINE DRAWING 1. FEATURES Unit in mm ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.

MBN1200E17D

Abstract: Measurement of stray inductance for IGBT 65NH GE-12 Hitachi DSA00281
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-03007 R7 MBN1200E17D Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

Thunderbolt

Contextual Info: APT20GT60KR A dvanced R ow er T e c h n o lo g y 6oov 4o a Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.

AN9701

Abstract: siemens igbt application note driver igbt SIEMENS IHD280 OSC4216 IGBT DRIVER application note AN-9701 BSM200GB120DN2 "IGBT Drivers" IHD280 equivalent
Contextual Info: AN-9701 Application Note IGBT drivers correctly calculated What you must know when dimensioning an IGBT driver by Heinz Rüedi and Peter Köhli Introduction The correct selection and dimensioning of IGBT drivers often involves questions or uncertainties. This is in part due to the specifications of the IGBTs themselves. Thus there

APT30GT60

Contextual Info: IT J M APT30GT60BR A dvanced R ow er Te c h n o lo g y 6oov 55A Thunderbolt IGBT The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.

Contextual Info: APT20GT60BR A dvanced I T J R ow er T e c h n o lo g y 6oov 4o a Thunderbolt IGBT The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.

Contextual Info: A d van c ed I T J R ow er Tec h n o lo g y APT20GF120BR 1200v 32A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and lowCollector-Emitter On voltage.

Contextual Info: A dvanced R ow er Te c h n o lo g y A P T 33G F 120B R 1200 v 52A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and lowCollector-Emitter On voltage.

BR98

Abstract: FF1200R17KP4 9AaN
Contextual Info: Technische Information / technical information FF1200R17KP4_B2 IGBT-Module IGBT-modules * ) () * 1 + , . + /, . + / 2 + - ,! + - ,! 3 0456 7 4 89: 7 , •( •) •) •, • $ ? •0 • + * . + / / + , • • • • • / ? + / + $/ 1? 2 / 0>$ + A BA ?

KU21

Abstract: FS20R06W1E3 DL94 UCW24
Contextual Info: Technische Information / technical information FS20R06W1E3 IGBT-Module IGBT-modules EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC ' *

FS30R06W1E3

Abstract: qsq100
Contextual Info: Technische Information / technical information FS30R06W1E3 IGBT-Module IGBT-modules EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC * +

FZ400R12KP4

Abstract: DIODE JS 8 YZ 160
Contextual Info: Technische Information / technical information FZ400R12KP4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode ' * + ',-. /

igbt 500V 50A

Contextual Info: bitemational [ÏÔR]Rectifier Provisional Data Sheet PD-9.1183 IRGKIN050K06 "CHOPPER“ IGBT INT-A-PAK Low conduction loss IGBT • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all “tail" losses •Short circuit rated Description

Contextual Info: Technische Information / technical information FP10R12W1T4 IGBT-Module IGBT-modules EasyPIM Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC EasyPIM™ module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

Contextual Info: H P 5A d va n ced F M PO W ER M l T e c h n o lo g y APT30GT60BRD 600v 55A Thunderbolt IGBT & FRED The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode FRED offers

GK4001

Abstract: QY10 FZ1800R17
Contextual Info: Technische Information / technical information FZ1800R17HP4_B9 IGBT-Module IGBT-modules IHM-B Modul mit soft schaltendem Trench-IGBT4 IHM-B module with soft-switching Trench-IGBT4 " # $ % & "' * + " ' ,-. * / 0 & '12 * 3 4 • •9 5 0 6 5 $ $ 5 : ; 5 :$

IRGNI090U06

Abstract: C799 cx fuse c796 47110
Contextual Info: International ^Rectifier PM970B IRGNI090U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"