IGBT, PASSIVATION Search Results
IGBT, PASSIVATION Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| SF-NDAAFF100G-000.5M |
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Amphenol SF-NDAAFF100G-000.5M 0.5m (1.6') 100GbE QSFP28 Cable - Amphenol 100-Gigabit Ethernet Passive Copper QSFP Cable (SFF-8665 802.3bj) - QSFP28 to QSFP28 | |||
| SF-QSFPPEXPAS-003 |
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Amphenol SF-QSFPPEXPAS-003 3m 40GbE QSFP+ Cable - Amphenol 40-Gigbit Ethernet Passive Copper Cable (SFF-8436 & 802.3ba) - QSFP+ to QSFP+ (9.8 ft) | |||
| SF-NDAAFF100G-003M |
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Amphenol SF-NDAAFF100G-003M 3m (9.8') 100GbE QSFP28 Cable - Amphenol 100-Gigabit Ethernet Passive Copper QSFP Cable (SFF-8665 802.3bj) - QSFP28 to QSFP28 | |||
| SF-QSFPPEXPAS-001 |
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Amphenol SF-QSFPPEXPAS-001 1m 40GbE QSFP+ Cable - Amphenol 40-Gigbit Ethernet Passive Copper Cable (SFF-8436 & 802.3ba) - QSFP+ to QSFP+ (3.3 ft) | |||
| SF-NDAAFF100G-001M |
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Amphenol SF-NDAAFF100G-001M 1m (3.3') 100GbE QSFP28 Cable - Amphenol 100-Gigabit Ethernet Passive Copper QSFP Cable (SFF-8665 802.3bj) - QSFP28 to QSFP28 |
IGBT, PASSIVATION Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: APT120GR120D APT120GR120D 1200V, 120A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT Die The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and |
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APT120GR120D | |
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Contextual Info: Data Sheet, Doc. No. 5SYA 1323-02 11 02 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage |
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12K1721 CH-5600 12K1721 | |
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Contextual Info: Data Sheet, Doc. No. 5SYA 1695-01 08 13 5SMY 12M1730 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage |
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12M1730 CH-5600 | |
5SMY 12J1721Contextual Info: Data Sheet, Doc. No. 5SYA 1325-02 11 02 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage |
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12J1721 CH-5600 12J1721 5SMY 12J1721 | |
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Contextual Info: Data Sheet, Doc. No. 5SYA 1324-02 11 02 5SMY 12G1721 IGBT-Die VCE = 1700 V IC = 50 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage |
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12G1721 CH-5600 12G1721 | |
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Contextual Info: Data Sheet, Doc. No. 5SYA 1318-01 11 06 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: alpha-Si and Silicon Nitride plus Polyimide Maximum rated values Parameter |
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12M1721 CH-5600 | |
169800
Abstract: 12M6501
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12M6501 CH-5600 169800 | |
12M1721Contextual Info: Data Sheet, Doc. No. 5SYA 1326-02 11 02 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage |
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12M1721 CH-5600 12M1721 | |
5SMY 12J1721Contextual Info: Data Sheet, Doc. No. 5SYA 1325-01 12 01 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage |
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12J1721 CH-5600 5SMY 12J1721 | |
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Contextual Info: Data Sheet, Doc. No. 5SYA 1323-01 12 01 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage |
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12K1721 CH-5600 | |
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Contextual Info: Data Sheet, Doc. No. 5SYA 1324-01 12 01 5SMY 12G1721 IGBT-Die VCE = 1700 V IC = 50 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage |
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12G1721 CH-5600 | |
5SMY 86G1721Contextual Info: Data Sheet, Doc. No. 5SYA 1324-03 04 14 5SMY 12G1721 IGBT-Die VCE = 1700 V IC = 50 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage |
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12G1721 CH-5600 5SMY 86G1721 | |
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Contextual Info: Data Sheet, Doc. No. 5SYA 1326-01 12 01 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage |
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12M1721 CH-5600 | |
5SMY 86M1730
Abstract: ac130
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12M1730 CH-5600 5SMY 86M1730 ac130 | |
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Contextual Info: Data Sheet, Doc. No. 5SYA 1326-03 04 14 5SMY 12M1721 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage |
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12M1721 CH-5600 | |
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Contextual Info: Data Sheet, Doc. No. 5SYA 1325-03 04 14 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage |
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12J1721 CH-5600 | |
12K1280Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values |
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12K1280 CH-5600 12K1280 | |
132102Contextual Info: VCE IC = = 1200 V 75 A IGBT-Die 5SMY 12J1280 Die size: 10.2 x 10.2 mm Doc. No. 5SYA 1321-02 Dez 12 • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values |
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12J1280 CH-5600 132102 | |
12M1280
Abstract: 5SMY12M1280
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12M1280 CH-5600 12M1280 5SMY12M1280 | |
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Contextual Info: VCE IC = = 1200 V 75 A IGBT-Die 5SMY 12J1280 Die size: 10.2 x 10.2 mm Doc. No. 5SYA 1321-03 04 14 • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values |
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12J1280 CH-5600 | |
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Contextual Info: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-03 04 14 • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values |
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12M1280 CH-5600 | |
abb press-pack igbtContextual Info: VCE IC = = 4500 V 55 A IGBT-Die 5SMY 12N4501 Die size: 14.3 x 14.3 mm Doc. No. 5SYA 1646-01 11 11 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride |
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12N4501 CH-5600 abb press-pack igbt | |
76K1280Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-03 04 14 • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values |
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12K1280 CH-5600 76K1280 | |
MJ86
Abstract: 57 A
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12H1280 CH-5600 MJ86 57 A | |