12G1721 Search Results

Contextual Info: Data Sheet, Doc. No. 5SYA 1324-01 12 01 5SMY 12G1721 IGBT-Die VCE = 1700 V IC = 50 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage

Contextual Info: Data Sheet, Doc. No. 5SYA 1324-02 11 02 5SMY 12G1721 IGBT-Die VCE = 1700 V IC = 50 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage

5SMY 86G1721

Contextual Info: Data Sheet, Doc. No. 5SYA 1324-03 04 14 5SMY 12G1721 IGBT-Die VCE = 1700 V IC = 50 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage

5Sya

Abstract: 12E17
Contextual Info: Data Sheet, Doc. No. 5SYA 1691-02 11 05 5SLY 12E1700 Fast-Diode Die VRRM = 1700 V IF = 50 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage

IGBT ultra fast

Abstract: 5SLY
Contextual Info: Data Sheet, Doc. No. 5SYA 1691-01 12 01 5SLY 12E1700 Fast-Diode Die VRRM = 1700 V IF = 50 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage

1691-03

Contextual Info: Data Sheet, Doc. No. 5SYA 1691-03 04 14 5SLY 12E1700 Fast-Diode Die VRRM = 1700 V IF = 50 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage