IFR 150 MOSFET Search Results

2SK2288

Abstract: F30S6N K2288 MOSFET 074
Contextual Info: 6 0 V v 'J - X / f 7 —MOSFET 60 V SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S 2 S K 2288 F 30S 6N 60v 30a ■ R A T IN G S ■ A b s o lu te M axim um R a tin g s * Item n Symbol K [ Storage Tem perature ■?" *V -t' ■^î'in./lË Channel Tem perature

2SK1681

Abstract: usim diode F30Z50 2sk16
Contextual Info: V X v 'J - X /t7 -M 0 S F E T VX SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S 2SK1681 F 30Z 50 500v 30 a ■ R A T IN G S A b s o lu te M a x im u m R a tin g s g m Ite m . IB- ':■# Symbol ; s M m i:- W : C o n d itio n s # m R a tin g s —5 5 ~ 1 5 0

75545P

Abstract: 75545S
Contextual Info: in terrii HUF75545P3, HUF75545S3S D ata S h e e t J u n e 1999 F ile N u m b e r 4 7 3 8 .1 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB • Ultra Low On-Resistance • rDS ON = 0.01 O il, V q s = 10V

Contextual Info: O FSS234D, FSS234R W ^ R R is 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space appli­

Contextual Info: Œ M A FSJ264D, FSJ264R 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 33A, 250V, rDS 0N = 0.0800 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

68HC05

Abstract: 68HC705V12 J1850 M68HC05 MC68HC705V12 eprom programmer schematic Nippon capacitors
Contextual Info: General Release Specification A G R E E M E N T 68HC705V12 R E Q U I R E D HC705V12GRS/D Rev. 1.0 Western MCU Design Center Tempe, Arizona N O N - D I S C L O S U R E August 14, 1996 A G R E E M E N T R E Q U I R E D General Release Specification N O N - D I S C L O S U R E

MC68HC05V12

Abstract: 00FF 68HC05 J1850 M68HC05 MC68HC705V12 MOSFET 150 N IRF
Contextual Info: MC68HC05V12/D Rev. 2.0 HC 5 MC68HC05V12 HCMOS Microcontroller Unit TECHNICAL DATA N O N - D I S C L O S U R E A G R E E M E N T R E Q U I R E D Technical Data Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola

Contextual Info: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. MC68HC05V12/D Rev. 2.0 HC 5 MC68HC05V12 HCMOS Microcontroller Unit TECHNICAL DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. N O N - D I S C L O S U R E

eeprom programmer schematic 27128

Abstract: eeprom copy schematic 27128 68HC05 68HC705V12 J1850 M68HC05 MC68HC705V12 Nippon capacitors
Contextual Info: General Release Specification A G R E E M E N T 68HC705V12 R E Q U I R E D HC705V12GRS/D Rev. 2.0 CSIC System Design Group Austin, Texas N O N - D I S C L O S U R E December 10, 1996 A G R E E M E N T R E Q U I R E D General Release Specification N O N - D I S C L O S U R E

eprom programmer schematic

Abstract: 00FF 68HC05 68HC705V12 HC05 J1850 M68HC05 MC68HC705V12
Contextual Info: Advance Information This document contains information on a new product. Specifications and information herein are subject to change without notice. A G R E E M E N T 68HC705V12 N O N - D I S C L O S U R E HC05 R E Q U I R E D Order this document by MC68HC705V12/D

max6239

Contextual Info: FSTJ9055D, FSTJ9055R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Harris has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

eprom programmer schematic

Abstract: power regulator cdr king
Contextual Info: Freescale Semiconductor, Inc. 68HC705V12 Advance Information This document contains information on a new product. Specifications and information herein are subject to change without notice. For More Information On This Product, Go to: www.freescale.com R E Q U I R E D

Contextual Info: Freescale Semiconductor, Inc. General Release Specification R E Q U I R E D A G R E E M E N T 68HC05V12 December 10, 1996 CSIC System Design Group Austin, Texas For More Information On This Product, Go to: www.freescale.com N O N - D I S C L O S U R E Freescale Semiconductor, Inc.

POWER VDMOS

Contextual Info: FSYC264D, FSYC264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 34A, 250V, Tqs ^o N = 0.080£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: System Motor Driver ICs for CD/DVD Players 1ch Spindle Motor Driver ICs BA6859AFP-Y,BA6664FM,BD6671FM No.10011EAT03 ●Description ROHM’s spindle motor drivers incorporate the 3-phase full-wave pseudo-linear drive system BA6859AFP-Y, BA6664FM and 180 ° electrifying direct PWM drive system(BD6671FM).Smooth rotation characteristic performance is ensured.

Contextual Info: MIC5031 MIC5031 High-Speed High-Side MOSFET Driver Preliminary information General Description Features The MIC5031 MOSFET driver is designed to switch an N-channel enhancement-type M OSFET from a TTL control signal in a high-side switch application. The MIC5031 pro­

Contextual Info: FSL23A0D, FSL23A0R D ata S h eet 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs June 1999 F ile N u m b er 4476.2 Features • 6A , 2 0 0 V , rQg ONi = 0.350J2 • Total D ose T h e D iscrete Products O pe ra tio n of Harris Corporation,

Contextual Info: 2SK1505-M R FUJI P O W ER M O S - F E T N-C HANNEL SILICON POWER MOS-FET • Outline Drawings ■ Features • Hiijh current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications : • Motor controllers

sd 7401

Abstract: T0257
Contextual Info: JA N SR 2N 7401 É S 1 H A R R I S S E M I C O N D U C T O R Formerly FSS234R4 August 1998 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET • 6A , 2 5 0 V , rQg ONi = 0.600J2 has d evelo p ed a s e ries of R adiation H a rd e n e d M O S F E T s for com m ercial

BD120

Abstract: STK2NA60
Contextual Info: S G S - T H O M S O N ¿ 5 ¡U È T O « 7 S T K 2 N A 60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V dss RDS on Id STK2NA60 600 V < 8 Q. 1.9 A . TYPICAL R DS(on) = 7.2 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING • . . . . 100% AVALANCHE TESTED

traveler

Contextual Info: FSL110D, FSL110R Semiconductor Data Sheet 3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s October 1998

Contextual Info: STTA306B TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS 3 I f a v 600 V V rrm trr 20 ns (typ) V f (max) A 1.65 V FEATURES AND BENEFITS • SPECIFICTO ’’FREEWH EEL MODE” OPERATIONS: FREEWHEEL OR BOOSTER DIODE ■ ULTRA-FAST, AND SOFT RECOVERY

Contextual Info: ¿57 SGS-THOMSON ¡UÈTO « STP7NA60 STP7NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E STP7NA60 STP7NA60FI V dss RDS on Id 600 V 600 V < 1a < 1a 7.2 A 4.4 A . TYPICAL R DS(on) = 0.92 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING • 100% AVALANCHE TESTED

Contextual Info: ¿ 5 SGS-THOMSON ¡UÈTO « 7 STP3NA50 STP3NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V STP3NA50 STP3NA50FI dss 500 V 500 V R DS on Id < 3 o <30 3.3 A 2.3 A . TYPICAL R DS(on) = 2.4 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING • 100% AVALANCHE TESTED