IFM ELECTRONIC Search Results

IFM Electronic GmBH

Abstract: essen
Contextual Info: R Zubehör E 20005 84 80 Tripelspiegel rund ifm electronic gmbh • Teichstraße 4 • 45 127 Essen Technische Änderungen behalten wir uns ohne Ankündigung vor! 03 / 96 R Accessoires E 20005 84 80 Reflector round ifm electronic gmbh • Teichstraße 4 •

ifm D 45128

Abstract: kd 2060 transistor
Contextual Info: .co m Original Device Manual ClassicController w.if m CR0032 Runtime system v02 ele ifm 7390660_07_UK 2014-08-15 ctro nic gm bh ww CODESYS v2.3 > English ifm Device Manual ecomatmobile ClassicController CR0032 Runtime System V02 2014-08-15 .co m Contents

TEMPLATEA

Abstract: kd 2060 transistor
Contextual Info: .co m Original Device Manual CabinetController w.if m CR0303 Runtime system v05 ele ifm 7390669_05_UK 2014-08-19 ctro nic gm bh ww CODESYS v2.3 > English ifm Device Manual ecomatmobile CabinetController CR0303 Runtime System V05 2014-08-19 .co m Contents

Fema Electronics

Contextual Info: MA Yellow Green 1206 SMT LED ELECTRONICS CORPORATION FEMA P/N: L3T2GC ABSOLUTE MAXIMUM RATINGS: PARAMETER Material:GaP/GaP TA=25°c - SYMBOL MAX. RATING UNIT Power Dissipation Pd 84 mW Continuous Forward Current IF 25 mA Peak Forward Current *1 IFM 50 mA

Contextual Info: MA Yellow 1206 SMT LED ELECTRONICS CORPORATION FEMA P/N: L3T2YC ABSOLUTE MAXIMUM RATINGS: PARAMETER TA=25°C Material:GaP/GaP SYMBOL MAX. RATING UNIT Power Dissipation Pd 90 mW Continuous Forward Voltage IF 25 mA Peak Forward Current *1 IFM 50 mA Reverse Voltage

D-45127

Contextual Info: E11034 Page 1 of 1 Accessories E11034 Mounting adapter M30x1,5 1: O-ring 44x2mm Design Process connection for capacitive sensors G 1½" Operating temperature [°C] -25 . +80 Housing material ifm electronic gmbh • Teichstraße 4 · D-45 127 Essen PVDF; EPDM

IFM D-45127 Essen

Abstract: IFM Electronic GmBH, D-45127 ESSEN D-45127 IFM 45127 D-45127 essen IFM Electronic GmBH d45127 d45127 D-45127 essen ifm IFM Electronic D-45127 ESSEN IFM Electronic D-45127
Contextual Info: Zubehör E11033 Einbauadapter M30 x 1,5 - G 1½ 1: O-Ring 44 x 2 mm Prozeßanschluß G1½ Druckfestigkeit [bar] 8 * Umgebungstemperatur [°C] Gehäusewerkstoffe Bemerkungen ifm electronic gmbh • Teichstraße 4 · D-45127 Essen -25.90 POM Polyoxymethylen)

D-45127

Abstract: E40101 M18X1 316S12
Contextual Info: Accessories E40101 Adapter M18x1,5/M12x1 Design Housing material Remarks M12x1 stainless steel 316S12 probe length with adapter = 13.5mm ifm electronic gmbh • Teichstraße 4 · D-45 127 Essen We reserve the right to make technical alterations without prior notice. — GB - E40101 — 27.10.1999

D-45127

Abstract: D-45127Essen
Contextual Info: E40078 Page 1 of 1 Accessories E40078 Progressive ring T-piece DIN 2353 QL 18-18-18 Recommendation: precision steel pipes 18x1.5 to DIN 2391/ISO 3304 Design Perm. overload pressure [bar] Housing material ifm electronic gmbh • Teichstraße 4 · D-45 127 Essen

D-45127

Contextual Info: E40079 Page 1 of 1 Accessories E40079 Progressive ring T-piece DIN 2353 QL 22-18-22 Recommendation: precision steel pipes 22x1.5 to DIN 2391/ISO 3304 Design Perm. overload pressure [bar] Housing material ifm electronic gmbh • Teichstraße 4 · D-45 127 Essen

BPW14A

Abstract: BPW14 BPW14C BPW13 FLU10 BPW13A bpw14b BPW 14 A 06 t127 BPW13C
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • fl'tëOG'îb 00QÔ370 7 IAL6<S BPW 13 • BPW 14 TÏÏEU IFM IM iK I electronic Ovahvt Yfchnotogm Silicon NPN Epitaxial Planar Phototransistors Applications: Detector In electronic control and drive circuits Features: • Hermetically sealed case

Contextual Info: ßßDRIVENßBY ELMOS is a member of the IO-Link consortium IO-Link and ™ are trademarks of ifm electronic GmbH E981.12 DUAL IO-LINK MASTER TRANSCEIVER WITH UARTS ADVANCE PRODUCT INFORMATION - MAR 17, 2011 General Description Features ÿ ÿ ÿ ÿ ÿ ÿ

d45127

Abstract: D-45127
Contextual Info: Accessories E40099 Adapter M18x1,5/G¼ Design Housing material Remarks ¼" stainless steel 316S12 probe length with adapter = 13.5mm ifm electronic gmbh • Teichstraße 4 · D-45 127 Essen We reserve the right to make technical alterations without prior notice. — GB - E40099 — 27.10.1999

E40096

Abstract: D-45127 D-45127Essen
Contextual Info: Accessories E40096 Adapter M18x1,5/G½ Design Housing material Remarks ½" stainless steel 316S12 probe length with adapter = 21mm ifm electronic gmbh • Teichstraße 4 · D-45 127 Essen We reserve the right to make technical alterations without prior notice. — GB - E40096 — 27.10.1999

D-45127

Abstract: D45127
Contextual Info: E43000 Page 1 of 1 Accessories E43000 mounting clamp Housing material ifm electronic gmbh • Teichstraße 4 · D-45 127 Essen PP polypropylene We reserve the right to make technical alterations without prior notice. — GB - E43000 — 09.06.2001 http://www.efector.com/products/uk/PDF/E43000.htm

D-45127

Abstract: d45127 M24X1 ifm electronic 1.0037
Contextual Info: E43002 Page 1 of 1 Accessories E43002 Welding bush Ø50 / M24x1,5 Design Housing material ifm electronic gmbh • Teichstraße 4 · D-45 127 Essen for capacitive level sensors steel 1.0037 We reserve the right to make technical alterations without prior notice. — GB - E43002 — 09.06.2001

Contextual Info: MA721WS SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For super-high speed switching circuit For small current rectification Absolute Maximum Ratings Tj = 25℃ Parameter Symbol Value Unit Reverse Voltage (DC) VR 30 V Peak Forward Current IFM 300 mA Average Forward Current

Contextual Info: 1N119WS SILICON EPITAXIAL PLANAR DIODE APPLICATIONS ˙High speed switching Absolute Maximum Ratings Ta = 25OC Parameter Symbol Limits Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 V Peak forward current IFM 300 mA Average forward current Io 100

Contextual Info: MA721WS SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For super-high speed switching circuit For small current rectification Absolute Maximum Ratings Tj = 25℃ Parameter Symbol Value Unit Reverse Voltage (DC) VR 30 V Peak Forward Current IFM 300 mA Average Forward Current

Contextual Info: 1N119WS SILICON EPITAXIAL PLANAR DIODE APPLICATIONS ˙High speed switching Absolute Maximum Ratings Ta = 25OC Parameter Symbol Limits Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 V Peak forward current IFM 300 mA Average forward current Io 100

CRS01

Contextual Info: CRS01 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CRS01 High Speed Rectifier Applications • Unit: mm Low forward voltage: VFM = 0.37 V @ IFM = 0.7 A • Average forward current: IF AV = 1.0 A • Repetitive peak reverse voltage: VRRM = 30 V

304S15

Abstract: IFM Electronic GmBH M24X1 D-45127 d45127
Contextual Info: E43003 Page 1 of 1 Accessories E43003 Mounting adapter G3/4 / M24x1,5 Design Housing material ifm electronic gmbh • Teichstraße 4 · D-45 127 Essen for capacitive level sensors stainless steel 304S15 We reserve the right to make technical alterations without prior notice. — GB - E43003 — 09.06.2001

RJ-45 SOCKET

Abstract: ifm electronic RJ-45 ifm electronic IFM Electronic GmBH
Contextual Info: R Zubehör E80203 Verlängerungskabel für dataMonitor Sensoren 5m Verwendung Kabel \DATEN\100\DB-FORM—PZD/03/12/96 Anschluss ifm electronic gmbh • Teichstraße 4 • 45 127 Essen 5m Messdatenaufnahme mit dataMonitor 5 m; PVC-Kabel 4-pol. RJ 45-Stecker; 4-pol. RJ 45-Buchse

marking code F3

Abstract: diode MARKING F3
Contextual Info: MMBD193 SILICON EPITAXIAL PLANAR DIODE Ultra High Speed Switching Application 3 2 1 Marking Code: F3 SOT-23 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Peak Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Peak Forward Current IFM