IE 420 SMD Search Results

XXXXX18

Abstract: 070-003 MENS package land pattern for soic8 PO101
Contextual Info: 2 .2 8 0 .0 9 0 2.280 (.090) - BDTTDM VIEW 2 .6 6 0 (.10 5) A LTER N A TE BDTTDM V IE W 1 ,835±,420 6,000 ( , £ 36 ) .2 0 3 C008> 4 , 9 0 0 ¿ C l,9 3 ) UO-O-I 1,27 BSC (.050) “H j- ,070 f .420 (.016) (.003) I, 550 (.060) SID E V IE W UNLESS OTHERWISE SPECIFIED.

BCW81

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW81 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW81 = K3

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW81 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW81 = K3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

BCW31

Abstract: BCW32 BCW33
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking

BCW32

Abstract: BCW31 BCW33
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS

Contextual Info: SMB3W-420/525/640-I TECHNICAL DATA High Power LED, SMD InGaN / GaInAsP SMB3W-420/525/640-I are multi chip High Power LEDs, isolated mounted on a cooper heat sink with a 5x5 mm SMD package and molded with silicone resin. On forward bias, it emits a radiation

Contextual Info: Transistors SMD Type Epitaxial Planar NPN Transistor KTC4377 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1

Contextual Info: Transistors Diodes IC Transistor T SMD Type Product specification KTC4377 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A 0.53±0.1 0.80±0.1 3 0.44±0.1

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW81 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BCW81 = K3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3

Contextual Info: Transistors SMD Type NPN general purpose double transistor BCV61 • Features ● High current gain Unit: mm ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage

Contextual Info: MOSFET SMD Type PNP general purpose double transistor BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage

MARKING k3 SOT-23

Abstract: BCW81
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW81 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW81 = K3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3

bcf81

Abstract: transistor smd marking NA sot-23
Contextual Info: Transistors IC SMD Type NPN General Purpose Transistors BCF81 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 45 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1

SMB1N-420H

Contextual Info: SMB1N-420H v 1.0 17.07.2014 Description SMB1N-D420H is a surface mount InGaN High Power LED with a typical peak wavelength of 420 nm and radiation of 420 mW. It comes in SMD package PA9T with silver plated soldering pads (lead free solderable), copper heat sink, and molded with silicone resin.

marking 1E

Abstract: Transistors smd 1G smd 1f MARKING 1F BC847T
Contextual Info: Transistors SMD Type NPN General Purpose Transistors KC847T BC847T SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 2 1 +0.15 1.6-0.15 Low voltage (max. 45 V). +0.05 0.8-0.05 Low current (max. 100 mA) +0.01 0.1-0.01 0.55 Features 0.35 3 +0.25 0.3-0.05

Contextual Info: Transistors Diodes SMD Type Product specification BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO

Contextual Info: Transistors SMD Type Product specification BCV61 • Features ● High current gain Unit: mm ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 30

SMB1N-420H-02

Contextual Info: SMB1N-420H-02 v 1.0 17.07.2014 Description SMB1N-420H-02 is a surface mount InGaN High Power LED with a typical peak wavelength of 420 nm and radiation of 420 mW. It comes in SMD package PA9T with silver plated soldering pads (lead free solderable), copper heat sink, and molded with silicone resin.

Contextual Info: SMD Type Product specification KC847T BC847T SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 2 1 +0.15 1.6-0.15 Low voltage (max. 45 V). +0.05 0.8-0.05 Low current (max. 100 mA) +0.01 0.1-0.01 0.55 Features 0.35 3 +0.25 0.3-0.05 0.5 +0.1 -0.1 +0.1

SMD 3E

Abstract: BC857T SMD Transistors 3f
Contextual Info: Transistors SMD Type PNP General Purpose Transistors KC857T BC857T SOT-523 Unit: mm +0.1 1.6-0.1 Features +0.1 1.0-0.1 +0.05 0.2-0.05 1 +0.15 1.6-0.15 +0.05 0.8-0.05 2 Low voltage (max. 45 V). +0.01 0.1-0.01 0.55 Low current (max. 100 mA) 0.35 3 +0.25 0.3-0.05

MARKING SMD 4G

Abstract: kc860bw ie 420 smd marking BC860W MARKING SMD 4F
Contextual Info: Transistors SMD Type PNP General Purpose Transistors KC860W BC860W Features Low current (max. 100 mA) Low voltage (max. 45 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage

smd transistor marking D3

Abstract: BCW33 SMD TRANSISTOR D2 marking D2 SOT-23 BCW31 BCW32 smd TRANSISTOR marking ku
Contextual Info: Transistors IC SMD Type NPN General Purpose Transistors BCW31,BCW32,BCW33 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 32 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1

smd transistor marking 1B

Abstract: SMD TRANSISTOR MARKING 1F smd TRANSISTOR 1D SMD TRANSISTOR MARKING 1M smd transistor marking 1E SMD Transistor 1f SMD TRANSISTOR MARKING 1D smd 1G SMD transistor MARKING 65 smd transistor 1g
Contextual Info: Transistors IC SMD Type NPN General Purpose Transistor BC846W,BC847W,BC848W Features Low current max. 100 mA . Low voltage (max. 65 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol BC846W BC847W BC848W Unit Collector-base voltage Parameter