IDSS SEMICONDUCTORS Search Results

PN4416

Abstract: BH RV transistor PN4416A
Contextual Info: Philips Semiconductors B i b b 5 3 ^ 31 □ D 5 0 7 3 b 0 3 M A P X N-channel field-effect transistor PN4416; PN4416A AMER PHIL IPS/DISCRETE FEATURES Product specification b?E QUICK REFERENCE DATA MIN. MAX. UNIT PN4416 - 30 V PN4416A - 35 V Idss drain current

Contextual Info: D SbE • ^70576 0D07052 7Tb H Z E T B SEMICONDUCTOR DICE MOSFETs - N-CHANNEL B V 0SS Dice type ZVN0540 Min. ZETEX f'DSIonI Max. at lD V qs SEMICONDUCTORS Max. IDSS at Max. IGSS at 'd m Rated VDS V GS=20V Min. atV0S ^GS th Chip Min. Max. at lD geometry at

JS8834-AS

Contextual Info: Microwave Semiconductors Power GaAs FETs J10 Type No. Freq. Band GHz S8834 JS8834-AS S8835 JS8835-AS PicB Typ. GiteTyp. (dBm) (dB) Ids = Idss/2 nadd Typ. (%) Ftest (GHz ) Vos (V) 21 9 27 8 10 24 8 26 8 10 29.5 7.5 30 8 10 32 7 28 8 10 33.5 5.5 25 8 10 36

NEZ3642-15D

Abstract: NEZ3642-15DL NEZ3642-4D NEZ3642-4DL NEZ3642-8D NEZ3642-8DL
Contextual Info: NEZ3642-15D NEZ3642-15DL NEZ3642-8D NEZ3642-8DL NEZ3642-4D NEZ3642-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • • • • ELECTRICAL CHARACTERISTICS TC PART NUMBER P1DB ηADD IDS GL IM3 -X DL Option Only IDSS VP BVDGO gm RTH(CH-C CHARACTERISTICS

Contextual Info: NEZ3642-15D NEZ3642-15DL NEZ3642-8D NEZ3642-8DL NEZ3642-4D NEZ3642-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • • • • ELECTRICAL CHARACTERISTICS TC PART NUMBER P1DB ηADD IDS GL IM3 -X DL Option Only IDSS VP BVDGO gm RTH(CH-C CHARACTERISTICS

NEZ3642-8DL

Abstract: NEZ3642-15D NEZ3642-15DL NEZ3642-4D NEZ3642-4DL NEZ3642-8D
Contextual Info: NEZ3642-15D NEZ3642-15DL NEZ3642-8D NEZ3642-8DL NEZ3642-4D NEZ3642-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • • • • ELECTRICAL CHARACTERISTICS TC PART NUMBER P1DB ηADD IDS GL IM3 -X DL Option Only IDSS VP BVDGO gm RTH(CH-C CHARACTERISTICS

ADE-208-1377

Abstract: H5N2508DSTL-E dpak code H5N2508DL H5N2508DS PRSS0004ZD-B PRSS0004ZD-C
Contextual Info: H5N2508DL, H5N2508DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1108-0200 Previous: ADE-208-1377 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: R DS (on) = 0.48 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 250 V)

NEZ4450-15D

Abstract: NEZ4450-4D NEZ4450-4DL NEZ4450-8D
Contextual Info: NEZ4450-15D NEZ4450-15DL NEZ4450-8D NEZ4450-8DL NEZ4450-4D NEZ4450-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • • • • • ELECTRICAL CHARACTERISTICS TC PART NUMBER P1DB ηADD IDS GL IM3 -XDL Option Only IDSS VP BVDGO gm RTH (CH-C ∆T (CH-C)

H5N2004DSTL-E

Abstract: H5N2004DL H5N2004DL-E H5N2004DS PRSS0004ZD-B PRSS0004ZD-C
Contextual Info: H5N2004DL, H5N2004DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1103-0200 Previous: ADE-208-1372 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: R DS (on) = 0.38 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 200 V)

499G

Abstract: NEZ4450-15D NEZ4450-4D NEZ4450-4DL NEZ4450-8D
Contextual Info: NEZ4450-15D NEZ4450-15DL NEZ4450-8D NEZ4450-8DL NEZ4450-4D NEZ4450-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • • • • • ELECTRICAL CHARACTERISTICS TC PART NUMBER P1DB ηADD IDS GL IM3 -XDL Option Only IDSS VP BVDGO gm RTH (CH-C ∆T (CH-C)

H5N5004PL

Abstract: H5N5004PL-E PRSS0004ZF-A
Contextual Info: H5N5004PL Silicon N Channel MOS FET High Speed Power Switching REJ03G1113-0200 Previous: ADE-208-1381 Rev.2.00 Sep 07, 2005 Features • • • • • • Low on-resistance: R DS (on) = 0.09 Ω typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V)

H5N2509P

Abstract: H5N2509P-E PRSS0004ZE-A SC-65
Contextual Info: H5N2509P Silicon N Channel MOS FET High Speed Power Switching REJ03G1109-0200 Previous: ADE-208-1378 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: R DS (on) = 0.053 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V)

2N3819 equivalent

Abstract: TEMIC 2N3819 transistor 2N3819 2N3819 2n4416 jfet Siliconix JFET Siliconix N-Channel JFET equivalent for 2N3819 2N4416 Siliconix Siliconix
Contextual Info: 2N3819 Siliconix N-Channel JFET PRODUCT SUMMARY VGS off (V) V(BR)GSS MIN (V) gfs MIN (MS) IDSS MIN (MA) v –8 –25 2 2 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion

dpak code

Abstract: H5N5006DL H5N5006DS H5N5006DSTL-E PRSS0004ZD-B PRSS0004ZD-C
Contextual Info: H5N5006DL, H5N5006DS Silicon N Channel MOS FET High Speed Power Switching REJ03G0397-0100 Rev.1.00 May 30, 2006 Features • • • • • Low on-resistance: RDS on = 2.5 Ω typ. Low leakage current: IDSS = 1 µA max. (at VDS = 500 V) High speed switching: tf = 15 ns typ. (at VGS = 10 V, VDD ≅ 250 V, ID = 1.5 A)

2SK3234

Abstract: PRSS0003AE-A
Contextual Info: 2SK3234 Silicon N Channel MOS FET High Speed Power Switching REJ03G1097-0200 Previous: ADE-208-1370 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: RDS (on) = 0.65 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 25 ns typ (at VGS = 10 V, VDD = 250 V, ID = 4 A)

Contextual Info: H5N5001FM Silicon N Channel MOS FET High Speed Power Switching REJ03G1112-0200 Previous: ADE-208-1380 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: R DS (on) =1.1 Ω typ. Low leakage current: IDSS =1 µA max (at VDS = 500 V) High speed switching: tf = 15ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)

2SK3233

Abstract: PRSS0003AE-A
Contextual Info: 2SK3233 Silicon N Channel MOS FET High Speed Power Switching REJ03G1096-0200 Previous: ADE-208-1369 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: RDS (on) = 1.1 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)

2SK3233

Abstract: PRSS0003AE-A 2SK3233-E
Contextual Info: 2SK3233 Silicon N Channel MOS FET High Speed Power Switching REJ03G1096-0200 Previous: ADE-208-1369 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: RDS (on) = 1.1 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)

2SK3234

Contextual Info: 2SK3234 Silicon N Channel MOS FET High Speed Power Switching REJ03G1097-0200 Previous: ADE-208-1370 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: RDS (on) = 0.65 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 25 ns typ (at VGS = 10 V, VDD = 250 V, ID = 4 A)

H5N5001FM

Abstract: PRSS0003AD-A
Contextual Info: H5N5001FM Silicon N Channel MOS FET High Speed Power Switching REJ03G1112-0200 Previous: ADE-208-1380 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: R DS (on) =1.1 Ω typ. Low leakage current: IDSS =1 µA max (at VDS = 500 V) High speed switching: tf = 15ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)

H5N5006FM

Abstract: H5N5006FM-E PRSS0003AD-A
Contextual Info: H5N5006FM Silicon N Channel MOS FET High Speed Power Switching REJ03G1114-0200 Previous: ADE-208-1112 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: R DS (on) = 2.5 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A)

H5N2503P-E

Abstract: H5N2503P PRSS0004ZE-A SC-65
Contextual Info: H5N2503P Silicon N Channel MOS FET High Speed Power Switching REJ03G1105-0200 Previous: ADE-208-1374A Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: R DS (on) = 0.04 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 250 V) High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A)

TF218THC

Contextual Info: TF218THC Ordering number : ENA0890 SANYO Semiconductors DATA SHEET N-channel Silicon Junction FET TF218THC Electret Condenser Microphone Applications Features • • • • • • Ultrasmall package facilitates miniaturization in end products. Especially suited for use in electret condenser microphone for audio equipments and telephones.

Contextual Info: EC4A01LF Ordering number : EN8714 SANYO Semiconductors DATA SHEET EC4A01LF N-Channel Silicon Junction FET Condenser Microphone Applications Features • • • • • • Ultrasmall 1710 size , thin (0.35mm) leadless package. Especially suited for use in condenser microphone for audio equipments and telephones.