| H5N2004DL |
|
Renesas Technology
|
Silicon N Channel MOS FET High Speed Power Switching |
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PDF
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62.64KB |
12 |
| H5N2004DL |
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Renesas Technology
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MOSFET, Switching; VDSS (V): 200; ID (A): 8; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.38; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 450; toff ( us) typ: 0.047; Package: DPAK (L)- (2) |
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87.17KB |
8 |
| H5N2004DL |
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Renesas Technology
|
Silicon N Channel MOS FET |
Original |
PDF
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87.06KB |
14 |
| H5N2004DL-E |
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Renesas Technology
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FET Transistor: Silicon N Channel MOS FET High Speed Power Switching |
Original |
PDF
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87.18KB |
8 |
