H5N2004DS Search Results

H5N2004DS Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
H5N2004DS		Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF	62.64KB	12
H5N2004DS		Renesas Technology	MOSFET, Switching; VDSS (V): 200; ID (A): 8; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.38; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 450; toff ( us) typ: 0.047; Package: DPAK (S)	Original	PDF	87.17KB	8
H5N2004DS		Renesas Technology	Silicon N Channel MOS FET	Original	PDF	87.06KB	14

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Renesas Electronics Corporation


Renesas Electronics Corporation H5N2004DSTL-E NCH POWER MOSFET 200V 8A 480MOHM
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H5N2004DS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
H5N2004DSTL-E Abstract: H5N2004DL H5N2004DL-E H5N2004DS PRSS0004ZD-B PRSS0004ZD-C Contextual Info: H5N2004DL, H5N2004DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1103-0200 Previous: ADE-208-1372 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: R DS (on) = 0.38 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 200 V)	Original	H5N2004DL, H5N2004DS REJ03G1103-0200 ADE-208-1372) PRSS0004ZD-B PRSS0004ZD-C H5N2004DSTL-E H5N2004DL H5N2004DL-E H5N2004DS PRSS0004ZD-B PRSS0004ZD-C	PDF
Hitachi DSA0076 Abstract: H5N2004DL H5N2004DS Contextual Info: H5N2004DL, H5N2004DS Silicon N Channel MOS FET High Speed Power Switching ADE-208-1372 Z 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on) = 0.38 typ. Low leakage current: IDSS = 1 µA max (at VDS = 200 V) High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A)	Original	H5N2004DL, H5N2004DS ADE-208-1372 H5N2004DL Hitachi DSA0076 H5N2004DL H5N2004DS	PDF
H5N2004DL Abstract: H5N2004DS Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog	Original		PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696	PDF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
H5N2004DL Abstract: H5N2004DL-E H5N2004DS H5N2004DSTL-E PRSS0004ZD-B PRSS0004ZD-C Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF