IDP-200A D Search Results

30u60

Abstract: ixys dsei 8-06 ixys dsei STTH 3060 MUR 8120 ixys dsei 12-12 10U60 RHRG 8120 40U60 ixys dsei 60-06
Contextual Info: Cross Reference List EmCon Diodes Product Name Company VRRM [V] Package IF @ [A] 125°C Typ VF [V] 25°C di/dt=-200A/µs VR=200V Typ Typ tRR [ns] Qrr [nC] 25°C 25°C 40 28 40 28 Special features Closest Infineon Equivalent IR IR HFA 04 HFA 04 TB60S TB60 600

Contextual Info: MOSFET MODULE SF20QAAK UL!E76102 M) SF 2 0 0 AA1 0 is an isolated MOSFET module designed for fast switching applications of low voltage/high current. SF 2 0 0 AA1 0 enable you to control high power with compact package. • Id= 200A, Vdss=I00V • Compact Package

Contextual Info: MOSFET IC DIP Type SMD Type Type Product specification 2N60 TO-220 Features RDS ON = 3.8 @VGS = 10V. Low gate charge ( typical 9.0 nC). Low Crss ( typical 5.0 pF). Fast switching capability. 1 Gate 2 Drain 3 Source Avalanche energy specified Improved dv/dt capability.

KHB3D0N70F

Abstract: KHB3D0N70P MOSFET 30A 700V
Contextual Info: SEMICONDUCTOR KHB3D0N70P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power

power mosfet 80v 150a

Contextual Info: SEMICONDUCTOR KU045N10P TECHNICAL DATA N-ch Trench MOS FET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,

Contextual Info: MOSFET IC SMDType DIP Type N-Channel MOSFET 2N60 TO-220 Features RDS ON = 3.8 @VGS = 10V. Low gate charge ( typical 9.0 nC). Low Crss ( typical 5.0 pF). Fast switching capability. 1 Gate 2 Drain 3 Source Avalanche energy specified Improved dv/dt capability.

Contextual Info: MOSFET MODULE SF20OBA10 S F 2 0 0 B A 10 is an isolated power M OSFET module designed fast switching applications of high voltage and current, mounting base of the module is electrically isolated from semic ductor elements for simple heatsink construction.

SF200AA20

Contextual Info: M O S F E T M O D U LE SF200AA20 ULIE76102 M S F 2 0 0 A A 2 0 is an isolated MOSFET module designed for fast switching applications of low voltage/high current. S F 2 0 0 A A 2 0 enable you to control high power with compact package. • lo = 200A, VDss= 200V

9d0n90n

Abstract: KHB 9d0n90n khb9d0n90n khb9d0n90na 2663 transistor 9d0n90 54NC khb9d0n90 transistor marking 020
Contextual Info: SEMICONDUCTOR KHB9D0N90NA TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A N O B Q K R H I C J F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

Amps500Volts

Contextual Info: ET830 5 Amps， ，500Volts N-Channel MOSFET • Description The ET830 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

2n60

Abstract: 2N60 TO-252 2n60 MOSFEt ET2N60 ISD20A TO252 rthjc CHARACTERISTICS DIODE 2n60 to-251 TO-252 2N60 TO220F
Contextual Info: 2N60 N2 Amps，600Volts N-Channel MOSFET • Description The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

Contextual Info: ET740 10.5 Amps， ，400Volts N-Channel MOSFET • Description The ET740 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

ET840

Contextual Info: ET840 9 Amps， ，500Volts N-Channel MOSFET • Description The ET840 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

TO252 rthjc

Abstract: 4N60 TO-252 4n60 to252 4n60 mosfet 4n60 4N60 application note TO-252 16nC TO-252 N-channel MOSFET TO-252 N-channel power MOSFET
Contextual Info: 4N60 4 Amps， ，600Volts N-Channel MOSFET • Description The ET4N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

Contextual Info: KHB4D5N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA General Description A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode

7N60

Contextual Info: 7N60 7 Amps， ，600Volts N-Channel MOSFET • Description The ET7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

mosfet 60a 200v

Abstract: ET73 N-channel enhancement 200V 60A
Contextual Info: ET730 6 Amps， ，400Volts N-Channel MOSFET • Description The ET730 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

2SJ662

Abstract: IT08765
Contextual Info: 2SJ662 Ordering number : EN8587 P-Channel Silicon MOSFET 2SJ662 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.

idp-200a

Abstract: 2SK3835 K383
Contextual Info: 2SK3835 Ordering number : EN8637 N-Channel Silicon MOSFET 2SK3835 General-Purpose Switching Device Applications Features • • • Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter

kf80n08

Abstract: KF80N08P kf80n08f 701p2
Contextual Info: SEMICONDUCTOR KF80N08P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF80N08P A It s mainly suitable for low voltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS

D 92 M - 02 DIODE

Abstract: KF70N06
Contextual Info: SEMICONDUCTOR KF70N06P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF70N06P A It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS

MOSFET

Abstract: Planar KF10N65F
Contextual Info: SEMICONDUCTOR KF10N65F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

KF7N68F

Abstract: Diode is 10-16
Contextual Info: SEMICONDUCTOR KF7N68F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

KHB9D0N90N1

Abstract: khb9d0n90n khb9d0n90 2663 transistor
Contextual Info: SEMICONDUCTOR KHB9D0N90N1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A N O B Q K R H I C J F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and