IDG 650 Search Results

IDG 650

Abstract: IDG-650 IDG650 J-STD-020D JESD22-B104C JESD22-A108C Invensense MEMS Gyroscope gyro vibratory gyroscope
Contextual Info: InvenSense Inc. 1197 Borregas Ave, Sunnyvale, CA 94089 U.S.A. Tel: +1 408 988-7339 Fax: +1 (408) 988-8104 Website: www.invensense.com PS-IDG-0650B-00-05 Release Date: 05/20/10 IDG-650 Dual-Axis Gyro Product Specification A printed copy of this document is

CEL9220HF13

Abstract: CEL-9220HF13
Contextual Info: InvenSense Inc. 1197 Borregas Avenue, Sunnyvale, CA 94089 U.S.A. Tel: +1 408 988-7339 Fax: +1 (408) 988-8104 Website: www.invensense.com Document Number: PS-IDG-1123B-00 Revision: 6.2 Release Date: 05/13/2011 Preliminary Product Specification IDG-1123 Dual-Axis Gyro

Contextual Info: InvenSense Inc. 1197 Borregas Avenue, Sunnyvale, CA 94089 U.S.A. Tel: +1 408 988-7339 Fax: +1 (408) 988-8104 Website: www.invensense.com PS-IDG-1215-00-03 Release Date: 04/13/10 IDG-1215 Dual-Axis Gyro Product Specification A printed copy of this document is

CEL9220HF13

Abstract: tanaka gold wire gld Dow Corning DA6501 cel9220 CEL9220HF13H CEL-9220HF13H CEL9220HF CEL-9220HF13 Trimethylated silica cel-9220
Contextual Info: InvenSense Inc. 1197 Borregas Avenue, Sunnyvale, CA 94089 U.S.A. Tel: +1 408 988-7339 Fax: +1 (408) 988-8104 Website: www.invensense.com PS-IDG-1150B-00-05 Release Date: 07/28/08 IDG-1150 Dual-Axis Gyro Product Specification A printed copy of this document is

IDG-1215

Abstract: IDG1215 J-STD-020D PS-IDG-1215-00-04 Invensense MEMS Gyroscope Dual-axis ta-f480 JESD22-A101C vibratory gyroscope
Contextual Info: InvenSense Inc. 1197 Borregas Avenue, Sunnyvale, CA 94089 U.S.A. Tel: +1 408 988-7339 Fax: +1 (408) 988-8104 Website: www.invensense.com PS-IDG-1215-00-04 Release Date: 05/20/10 IDG-1215 Dual-Axis Gyro Product Specification A printed copy of this document is

CEL9220HF13

Abstract: CEL9220HF CEL9220 CEL9220HF13H CEL-9220HF13 cel-9220 22-A108 CEL-9220HF13H DA6501 IDG1123
Contextual Info: InvenSense Inc. 1197 Borregas Avenue, Sunnyvale, CA 94089 U.S.A. Tel: +1 408 988-7339 Fax: +1 (408) 988-8104 Website: www.invensense.com PS-IDG-1123B-00-06 Release Date: 04/13/10 IDG-1123 Dual-Axis Gyro Product Specification A printed copy of this document is

IDG 600

Abstract: IDG-300 PS-IDG-0300B-00-03 9220HF13H IDG300 Gyroscope InvenSense Inc. IDG300 IDG-300B 22-A101 CIRCUIT DESIGN FOR A CAPACITIVE MEMS GYROSCOPE
Contextual Info: InvenSense Inc. 1197 Borregas Ave, Sunnyvale, CA 94089 U.S.A. Tel: +1 408 988-7339 Fax: +1 (408) 988-8104 Website: www.invensense.com PS-IDG-0300B-00-03 Release Date: 04/13/10 IDG-300B Dual-Axis Gyro Product Specification A printed copy of this document is

Contextual Info: Integrated Dual-Axis Gyro IDG-1215 FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • • • The IDG-1215 is an integrated dual-axis angular rate sensor gyroscope . It uses InvenSense’s proprietary and patented MEMS technology with vertically driven,

Contextual Info: Integrated Dual-Axis Gyro IDG-650 FEATURES • Integrated X- and Y-axis gyros on a single chip • Two separate outputs per axis for standard and high sensitivity: X-/Y-Out Pins: 2000°/s full scale range 0.5mV/°/s sensitivity X/Y4.5Out Pins: 440°/s full scale range

FLM5964-4c

Contextual Info: p. .fjW-,. FLM5964-4C Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 36dBm Typ.) • • • • • High Gain: G-j^B = 9.0dB (Typ.) High PAE: riadd = 32% (Typ.) Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package

Contextual Info: FLM7785-18DA F| Internally Matched Power GaAs FETs I FEATURES • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q

FLM6472-12D

Abstract: SCL 1058 FLM6472-12DA
Contextual Info: FLM6472-12DA F| Internally Matched Power GaAs FETs I FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q

GaAs FETs

Contextual Info: FLM6472-8D F| «e . r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G -j^B = 7.0dB (Typ.) High PAE: r iadd = 29% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 6.4 ~ 7.2GHz

cd 1691 cp

Abstract: Y3015
Contextual Info: F| .fjU-. FLM5964-12DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: G -j^B = 9.5dB (Typ.) High PAE: r iadd = 35% (Typ.) Low IM 3 = -45dBc@Po = 30dBm Broad Band: 5.9 ~ 6.4GHz

Contextual Info: n FLM5964-6D Internally Matched Power GaAs FETs . I 1jU FEATURES • High Output Power: P-idg = 38.0dBm Typ. • High Gain: G -j^B = 10.0dB (Typ.) • High PAE: r iadd = 36% (Typ.) • Low IM3 = -45dBc@Po = 27dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q

FLM6472-4C

Contextual Info: p.f jW-,. FLM6472-4C Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P-idg = 36dBm Typ.) High Gain: G-j^B = 8.0dB (Typ.) High PAE: riadd = 30% (Typ.) Broad Band: 6.4 ~7.2GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package

FLM5964-8C

Contextual Info: F|.fjU-,. FLM5964-8C I Internally Matched Power GaAs F E Ts FEATURES • High Output Power: P-idg = 39.0dBm Typ. • High Gain: G -j^B = 8.0dB (Typ.) • High PAE: r iadd = 30% (Typ.) • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed Package

FLM5964-18DA

Abstract: 5964-18DA 5964-18D
Contextual Info: FLM5964-18DA F| if m - i • I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G -j^B = 8.5dB (Typ.) High PAE: r iadd = 31% (Typ.) Low IM 3 = -45dBc@Po = 31.5dBm Broad Band: 5.9 ~ 6.4GHz

Contextual Info: FLM6472-35DA F| r U J Il j U Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 45.5dBm Typ. High Gain: G-j^B = 6.0dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 34.5dBm Broad Band: 6.4 ~ 7.2GHz

U/25/20/TN26/15/850/FLM6472-18DA

Contextual Info: FLM6472-18DA F| I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q

FLM5964-25DA

Abstract: CS 5800
Contextual Info: lîrTCI FLM5964-25DA r UJI1bU Internally Matched Power GaAs F E Ts FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G -j^B = 8.5dB (Typ.) High PAE: r iadd = 33% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 5.9 ~ 6.4GHz

FLM6472-25D

Contextual Info: F|.9J^., FLM6472-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q

GaAs FETs

Abstract: FLM5964-4D
Contextual Info: F|.fjU. FLM5964-4D J Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 36dBm Typ. • High Gain: G -j^B = 9.0dB (Typ.) • High PAE: r iadd = 31% (Typ.) • Low IM3 = -45dBc@Po = 25dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q

FLM6472-4D

Contextual Info: FLM6472-4D Fuffrsu Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 36dBm Typ. High Gain: G -j^B = 8.0dB (Typ.) High PAE: r iadd = 30% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q