ID101 DIODE Search Results

Contextual Info: ID101 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Intersil ID101 The ID101 is a low leakage Monolithic Dual Pico-Amp Diode The ID101 low-leakage monolithic dual diode provides a superior alternative to conventional diode technology

UNION CARBIDE

Contextual Info: ID100 ID101 MONOLITHIC DUAL PICO AMPERE DIODES FEATURES DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101 REVERSE LEAKAGE CURRENT IR = 0.1pA REVERSE BREAKDOWN VOLTAGE BVR ≥ 30V REVERSE CAPACITANCE ABSOLUTE MAXIMUM RATINGS Crss = 0.75pF 1 ID100 ID101 TO-78 TOP VIEW

transistor 2N4393

Abstract: Dual Amplifier Transistor intersil dual JFET P-Channel Depletion Mode FET intersil JFET high voltage pnp transistor 2N4392 smt a1 transistor NPN
Contextual Info: ID100 ID101 MONOLITHIC DUAL PICO AMPERE DIODES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101 REVERSE LEAKAGE CURRENT IR = 0.1pA REVERSE BREAKDOWN VOLTAGE BVR ≥ 30V REVERSE CAPACITANCE Crss = 0.75pF ID100 ID101 TO-78 BOTTOM VIEW

ID101 diode

Contextual Info: ID101 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Intersil ID101 The ID101 is a low leakage Monolithic Dual Pico-Amp Diode The ID101 low-leakage monolithic dual diode provides a superior alternative to conventional diode technology

ID100

Abstract: 2N4393 Direct Replacement INTERSIL TO-78 2N4117A ID101 OP-27 PA 0016
Contextual Info: ID100 ID101 MONOLITHIC DUAL PICO AMPERE DIODES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101 REVERSE LEAKAGE CURRENT IR = 0.1pA REVERSE BREAKDOWN VOLTAGE BVR ≥ 30V REVERSE CAPACITANCE Crss = 0.75pF ID100 ID101 TO-78 BOTTOM VIEW

id100

Contextual Info: ID100 ID101 MONOLITHIC DUAL PICO AMPERE DIODES FEATURES DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101 REVERSE LEAKAGE CURRENT IR = 0.1pA REVERSE BREAKDOWN VOLTAGE BVR ≥ 30V ID100 ID101 Crss = 0.75pF TO-78 TOP VIEW TO-71 TOP VIEW REVERSE CAPACITANCE ABSOLUTE MAXIMUM RATINGS

1D100

Abstract: ID100 ID101 XID100 XID101
Contextual Info: CALOGIC CORP i+flE D 10*44322 0 0 0 0 3 5 b 7 «CGC 0ual LowLeakaSe " " T 'O U O *3 ! vyivvlv CORPORATION ID100/ID101 GENERAL DESCRIPTION The ID100 and ID101 are monolithic dual diodes intended for use in applications requiring extremely low leakage currents.

ID100

Contextual Info: CALOGIC CORP UflE D f /l l A W i /1 CQIOOIC • 1AM4322 000035L. 7 I Dual LowLeaka9e 0 i o c l e T'OUOOl CO RPORA TION ' v ID100/ID101 GENERAL DESCRIPTION The ID 1 00 and ID101 are monolithic dual diodes intended for use in applications requiring extremely low leakage currents.

ID100

Abstract: ID101 T071 ID101 diode
Contextual Info: DIMBHÎ^DIL ID 100, ID101I Low Leakage» M onolithic Dual Diode» FEATURES PIN CONFIGURATIONS • Ir = 0.1 pA typical • BVr > 30 V • Cr = 0.75 pF (typical) TO-71 TO-78 GENERAL DESCRIPTION The ID IO O and ID101 are m o n o lith ic dual diodes intended

2N4351

Abstract: 3N161 3N163 3N164 3N170 3N171 3N172 3N173 IT1700 IT1750
Contextual Info: 1. D IS C R E T E S Switches and Amplifiers Offering intormatfM Priftrrtd P in Num b« Package — ^G S lh GS(ofl| Min/max V M O SFET Qls BWq s s lo s s max Ig s s max min r DS (on) max talon) min •o (on) min V pA pA pmho u mA mA max P-Chinm l Enhancamtnt: Gen. u se d w here max isolation between signal source and logic drive required: sw. "O n" resistance varies with signal amplitude.

IT1701

Abstract: 2N4351 3N172 3N163 3N164 3N170 3N171 IT1750 M116 M117
Contextual Info: I HA R R I S S E M I C O N D S E C T O R 27E D T SeS i; O 4302 27 1 QD157G1 0 BBHAS g • T r'O l" 0 I T -Z -7-Z 5 Switching/Am plifier Transistors M O S F E T s — N -C h a n n e l PART NUMBER PACKAGE VGS TH I V Max Min BVds S V Min •dss pA Max •gss

100S

Abstract: ID100 ID101 ID102 ID103 ID105
Contextual Info: ID100-ID106 SCRs .5 Amp, Planar FEATU RES D E S C R IP TIO N • Voltage Ratings: to 400V • Maximum Gate Trigger Current: 200,uA • Hermetically Sealed TO-18 Metal Can This Data Sheet describes Microsemi’s line of hermetically sealed industrial SCRs designed for low-voltage, low-current sensing application. The IDIOO Series is

Contextual Info: SCRs ID100-ID106 .5 Amp, Planar FEA TU RES • Voltage R ating s: to 400V • Maximum Gate Trigger Curren t: 200,«A • H erm etically Sealed TO-18 Metal Can • Plan ar Passivated Construction DESCRIPTION This Data Sheet describes Microsemi's line of hermetically sealed industrial SCRs

transistor j511

Abstract: ls n channel jfet Siliconix Dual N-Channel JFET Transistor J310 TRANSISTOR 2n3955 zener zd 31 P-Channel Depletion Mode FET IT132 ID100 dual diode
Contextual Info: J500 SERIES CURRENT REGULATING DIODES Linear Integrated Systems FEATURES SECOND SOURCE FOR SILICONIX J500 SERIES WIDE CURRENT RANGE 0.192 to 5.6mA BIASING NOT REQUIRED VGS = 0V A A K K 1 ABSOLUTE MAXIMUM RATINGS TO-92 BOTTOM VIEW @ 25 °C unless otherwise stated

TO72 package n-channel jfet

Abstract: PAD1 Spice transistor 2N4393 ls n channel jfet jfet j112 u406 type 2N5019 "direct replacement" J201 Replacement JPAD500
Contextual Info: PAD SERIES PICO AMPERE DIODES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX PAD SERIES REVERSE BREAKDOWN VOLTAGE REVERSE CAPACITANCE BVR ≥ -30V PAD1,2,5 PAD* Crss ≤ 2.0pF TO-72 BOTTOM VIEW TO-72 BOTTOM VIEW ABSOLUTE MAXIMUM RATINGS1

high speed Zener Diode

Abstract: "Dual PNP Transistor" PAD1 Spice a7 P-CHANNEL LS320 j177 TRANSISTOR "Dual npn Transistor" LS3250 2n5019 ultra low noise
Contextual Info: NC G2 G1 NC NC G2 G1 NC Linear Integrated Systems - Lead Pb Free / RoHS Compliant Parts List MAIN MENU Home Page Page 1 of 3 Linear Integrated Systems Lead-Free / RoHS Fact Sheet Products Support Literature Spice Models Downloads Contact Us Distributors

diode ZENER A8

Abstract: P-Channel Depletion Mosfets Siliconix Dual N-Channel JFET bare die zener Bi-Directional N-Channel mosfet Siliconix 2N5912 diode ZENER A8 5400 sd211de spice
Contextual Info: SD5000/5001/5400/5401 QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Linear Integrated Systems Product Summary Features Benefits Applications • Quad SPST Switch with Zener Input Protection • Low Interelectrode Capacitance and Leakage • Ultra-High Speed Switching—tON: 1 ns

ultra low igss pA

Abstract: ultra low igss pA mosfet n channel
Contextual Info: LS5301, PF5301 VERY HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR LF5301, PF5301, & 2N5301 HIGH INPUT INPEDANCE HIGH GAIN IG = 0.100 pA gfs = 70 µS ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated

intersil jfet

Abstract: intersil JFET TO 18 U308 DIODE A6 P-channel N-Channel power mosfet ENHANCEMENT 2n3955 transistor spice
Contextual Info: 3N170 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns TO-72 BOTTOM VIEW 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)

2N4351

Abstract: A6 ZENER DIODE "Dual npn Transistor" J201 spice intersil JFET TO 18 J201 N-channel JFET to 90 intersil JFET JFET NPN AMPLIFIER bare Die mosfet
Contextual Info: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA HIGH GAIN TO-72 BOTTOM VIEW gfs = 1000µS 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures

E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261

2sk170 spice

Abstract: j310 replacement replacement 2sk170 J201 Replacement LSK170A 2sk170 FET fet j310 Ultra High Input Impedance N-Channel JFET Amplifier ultra Low noise FET DIODE A6
Contextual Info: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE f = 1kHz en = 0.9nV/√Hz HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Yfs = 22mS (typ) HIGH INPUT IMPEDANCE IG = -500pA max LOW CAPACITANCE IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170

N-Channel jfet 100V depletion

Abstract: transistor j113 15 A PNP POWER TRANSISTOR P-Channel FET 100v to92 Ultra High Input Impedance N-Channel JFET Amplifier Dual N P-Channel 100V P-Channel JFET Switch
Contextual Info: LS320 HIGH INPUT IMPEDANCE BiFET AMPLIFIER Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE rGs = 100GΩ HIGH TRANSCONDUCTANCE YFS = 30,000µS ABSOLUTE MAXIMUM RATINGS1 TO-72 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature

ultra low igss pA mosfet

Abstract: ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent
Contextual Info: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL